VSMY2853RG, VSMY2853G Datasheet

VSMY2853RG, VSMY2853G
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm,
Surface Emitter Technology
VSMY2853RG
FEATURES
VSMY2853G
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
22689
• Very high radiant intensity
• Angle of half intensity: ϕ = ± 28°
DESCRIPTION
• Suitable for high pulse current operation
SurfLightTM
As part of the
portfolio, the VSMY2853 series
are infrared, 850 nm emitting diodes based on GaAlAs
surface emitter chip technology with extreme high radiant
intensities, high optical power and high speed, molded in
clear, untinted plastic packages (with lens) for surface
mounting (SMD).
• Terminal configurations: gullwing or reverse gullwing
• Package matches with detector VEMD2503X01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Emitter source for proximity sensors
• IR touch panels
• IR illumination
• 3D TV
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
VSMY2853RG
35
± 28
850
10
VSMY2853G
35
± 28
850
10
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMY2853RG
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Reverse gullwing
VSMY2853G
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Gullwing
Note
• MOQ: minimum order quantity
Rev. 1.2, 27-Mar-14
Document Number: 83480
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2853RG, VSMY2853G
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
5
V
Reverse voltage
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
1
A
PV
190
mW
Power dissipation
Junction temperature
Operating temperature range
Tj
100
°C
Tamb
-40 to +85
°C
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Tstg
-40 to +100
°C
acc. figure 7, J-STD-020
Tsd
260
°C
J-STD-051, soldered on PCB
RthJA
250
K/W
120
200
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
160
140
120
100
RthJA = 250 K/W
80
60
40
100
80
60
RthJA = 250 K/W
40
20
20
0
0
0
10
21890
20
30
40
50
60
70 80
0
90 100
Tamb - Ambient Temperature (°C)
10
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21891
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
TEST CONDITION
SYMBOL
IF = 100 mA, tp = 20 ms
VF
Radiant intensity
TYP.
MAX.
UNIT
1.65
1.9
V
IF = 1 A, tp = 100 μs
VF
2.9
V
IF = 1 mA
TKVF
-1.45
mV/K
IF = 10 mA
TKVF
-1.3
mV/K
IR
not designed for reverse operation
μA
VR = 0 V, f = 1 MHz, E = 0 mW/cm2
CJ
125
IF = 100 mA, tp = 20 ms
Ie
Reverse current
Junction capacitance
MIN.
20
35
pF
50
mW/sr
IF = 1 A, tp = 100 μs
Ie
300
mW/sr
IF = 100 mA, tp = 20 ms
φe
55
mW
IF = 100 mA
TKφe
-0.35
%/K
Peak wavelength
IF = 100 mA
λp
Spectral bandwidth
IF = 30 mA
Δλ
30
nm
Temperature coefficient of λp
IF = 30 mA
TKλp
0.25
nm/K
Rise time
IF = 100 mA, 20 % to 80 %
tr
10
ns
Fall time
IF = 100 mA, 20 % to 80 %
tf
10
ns
Radiant power
Temperature coefficient of radiant
power
ϕ
Angle of half intensity
Rev. 1.2, 27-Mar-14
± 28
840
850
deg
870
nm
Document Number: 83480
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2853RG, VSMY2853G
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1
Φe, rel - Relative Radiant Power
10
1
0.1
0.01
IF = 30 mA
0.75
0.5
0.25
0.001
0
0.5
1
1.5
2
2.5
3
VF - Forward Voltage (V)
22097
0
650
3.5
750
Fig. 3 - Forward Current vs. Forward Voltage
850
Fig. 5 - Relative Radiant Power vs. Wavelength
0°
1000
Ie rel - Relative Radiant Intensity
Ie - Radiant Intensity (mW/sr)
100
10
1
0.1
0.001
0.01
0.1
20°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
1
IF - Forward Current (A)
80°
0.6
0.4
0.2
0
22688
Fig. 4 - Radiant Intensity vs. Forward Current
SOLDER PROFILE
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
DRYPACK
300
Temperature (°C)
10°
30°
tp = 100 µs
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
950
λ - Wavelength (nm)
21776-1
ϕ - Angular Displacement
IF - Forward Current (A)
tp = 100 µs
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
200
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
DRYING
0
0
19841
50
100
150
200
250
300
Time (s)
Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
Rev. 1.2, 27-Mar-14
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Document Number: 83480
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2853RG, VSMY2853G
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: VSMY2853RG
Rev. 1.2, 27-Mar-14
Document Number: 83480
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2853RG, VSMY2853G
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: VSMY2853G
Rev. 1.2, 27-Mar-14
Document Number: 83480
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2853RG, VSMY2853G
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMY2853RG
Rev. 1.2, 27-Mar-14
Document Number: 83480
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2853RG, VSMY2853G
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMY2853G
Rev. 1.2, 27-Mar-14
Document Number: 83480
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000