VSMB2948RG, VSMB2948G www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW VSMB2948RG FEATURES VSMB2948G • Package type: surface mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55 • Peak wavelength: p = 940 nm • High reliability • High radiant power • High radiant intensity DESCRIPTION • Angle of half intensity: = ± 25° VSMB2948 series are infrared, 940 nm emitting diodes in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). • Low forward voltage • Suitable for high pulse current operation • Terminal configurations: gullwing or reserve gullwing APPLICATIONS • Package matches with detector VEMD2xx3X01 and VEMT2xx3X01 series • IR touch panels • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Remote control • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) p (nm) tr (ns) VSMB2948RG 20 ± 25 940 15 VSMB2948G 20 ± 25 940 15 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMB2948RG Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMB2948G Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage VR 5 V Forward current IF 100 mA IFSM 500 mA PV 160 mW Surge forward current TEST CONDITION tp = 100 μs Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.0, 17-May-13 UNIT Tj 100 °C Tamb - 40 to + 85 °C °C Tstg - 40 to + 100 according figure 9, J-STD-020 Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 250 K/W Document Number: 84201 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2948RG, VSMB2948G www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 10 21343 20 30 40 50 60 70 80 90 0 100 21344 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF 1.15 1.35 1.6 V IF = 500 mA, tp = 100 μs VF 1.8 V Temperature coefficient of VF IF = 1 mA TKVF - 1.5 mV/K Reverse current VR = 5 V Junction capacitance Radiant intensity VR = 0 V, f = 1 MHz, E = 0 IR mW/cm2 IF = 100 mA, tp = 20 ms CJ Ie 10 μA 30 mW/sr 21 10 20 pF IF = 500 mA, tp = 100 μs Ie 90 mW/sr IF = 100 mA, tp = 20 ms e 40 mW IF = 1 mA TKe - 1.1 %/K Peak wavelength IF = 30 mA p Spectral bandwidth IF = 30 mA 25 nm IF = 30 mA TKp 0.25 nm/K IF = 100 mA, 20 % to 80 % tr 15 ns IF = 100 mA, 20 % to 80 % tf 15 ns IDC = 70 mA, IAC = 30 mA pp fc 23 MHz Radiant power Temperature coefficient of radiant power Angle of half intensity Temperature coefficient of p Rise time Fall time Cut-off frequency Rev. 1.0, 17-May-13 ± 25 920 940 deg 960 nm Document Number: 84201 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2948RG, VSMB2948G www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 180 Ie rel - Relative Radiant Intensity (%) 1 0.1 0.01 140 120 IF = 100 mA 100 80 60 tp = 20 ms 40 0.001 0.5 0.9 0.7 1.1 1.3 1.5 - 60 - 40 - 20 1.9 1.7 VF - Forward Voltage (V) 0 20 60 80 100 Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature 110 Φe rel - Relative Radiant Power (%) 100 108 106 104 102 IF = 100 mA 100 IF = 10 mA 98 tp = 20 ms 96 94 IF = 1 mA 92 90 - 40 - 20 0 20 40 60 80 70 60 50 40 30 20 10 0 840 100 Tamb - Ambient Temperature (°C) 21443 IF = 30 mA 80 90 880 920 960 1000 1040 λ - Wavelength (nm) 21445 Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Radiant Power vs. Wavelength 0° 1000 10° 20° 30° tp = 100 µs Ie rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 40 Tamb - Ambient Temperature (°C) 21444 Fig. 3 - Forward Current vs. Forward Voltage VF, rel - Relative Forward Voltage (%) IF = 1 mA 160 100 10 1 0.1 0.001 0.01 0.1 IF - Forward Current (A) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.0, 17-May-13 1 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement IF - Forward Current (A) tp = 100 µs 80° 0.6 0.4 0.2 0 22690 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 84201 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2948RG, VSMB2948G www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 FLOOR LIFE 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. DRYING 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. PACKAGE DIMENSIONS in millimeters: VSMB2948RG Rev. 1.0, 17-May-13 Document Number: 84201 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2948RG, VSMB2948G www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VSMB2948G Rev. 1.0, 17-May-13 Document Number: 84201 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2948RG, VSMB2948G www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMB2848RG Rev. 1.0, 17-May-13 Document Number: 84201 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2948RG, VSMB2948G www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMB2848G Rev. 1.0, 17-May-13 Document Number: 84201 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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