ID 06-09-0102 REV 0 WAFER FABRICATION FLOWCHART – CMOS PROCESS WAFER FABRICATION FLOWCHART INCOMING QUALITY INSPECTION AND GATE Vendor: Product: Package: Location of Wafer Fab: Assembly: Final Test: Q.C. Test: Source Accept Test: Quality Contact: Linear Technology Corporation CMOS Products All Package Types Linear Technology Corp., Milpitas, CA./ Camas, WA Linear Technology Corporation, Penang, Malaysia or any approved assembly subcontractor Linear Technology Corp., Milpitas, CA., Singapore Linear Technology Corp., Milpitas, CA., Singapore Linear Technology Corp., Milpitas, CA., Singapore Naib Girn, LTC Milpitas, CA (408) 432-1900 Ext. 2519 FLOW CHART PROCESS STEP INCOMING RAW MATERIAL INSPECTION INITIAL OXIDATION DESCRIPTION WAFERS INSPECTION/TEST CRITERIA MANUFACTURING PROCESS QUALITY MONITOR / SURVEILLANCE REWORK METHOD & EQUIPMENT SAMPLING PLAN VISUAL: SCRATCHES, PITS, HAZE, CRATERS, DIMPLES, CONTAMINATION 1 X INSPECTION 1.0% AQL TO 2.5 AQL LEVEL 1 OXYGEN/CARBON MEASUREMENT INFRARED SPECTROMETER S/S=2, ACC = 0 RESISTIVITY / CONDUCTIVITY MAGNETRON V/I METER S/S=2, ACC = 0 DIMENSIONAL CALIPERS 2.5% AQL, LEVEL 1 THICKNESS AND TAPER/BOW DIAL THICKNESS GAGE 2.5% AQL, LEVEL 1 ORIENTATION BREAK TEST S/S=1. ACC = 0 C OF C VERIFICATION AGAINST “MPS” REQUIREMENTS EACH BATCH RETICLE VISUAL, C.D. MEASUREMENTS EACH PLATE CHEMICALS C OF C VERIFICATION AGAINST “MPS” REQUIREMENTS GASES C OF C VERIFICATION AGAINST “MPS” REQUIREMENTS TARGETS C OF C VERIFICATION OXIDATION FURNACE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 2 DEFECTS PER FIELD OF VIEW OXIDE THICKNESS NANOSPEC 3 WAFERS / CYCLE SPC TECHNIQUE LOGBOOK LOGBOOK LOGBOOK P-WELL MASK RESIST MASK HF ETCH BATH VISUAL OPTICAL MICROSCOPE 100X “S” PATTERN SCAN OF THE WAFERS PRODUCTION LOG PRE IMPLANT OXIDATION OXIDATION FURNACE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 2 DEFECTS PER FIELD OF VIEW LOGBOOK OXIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE P-WELL IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT LOGBOOK P-WELL DRIVE FURNACE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 2 DEFECTS PER FIELD OF VIEW LOGBOOK OXIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE LINEAR TECHNOLOGY CORPORATION PAGE 1 OF 5 ID 06-09-0102 REV 0 WAFER FABRICATION FLOWCHART – CMOS PROCESS FLOW CHART PROCESS STEP STRIP ALL OXIDE PAD OXIDATION NITRIDE DEPOSITION DESCRIPTION HF ETCH BATH OXIDATION FURNACE NITRIDE FURNACE INSPECTION/TEST CRITERIA METHOD & EQUIPMENT SAMPLING PLAN VISUAL UV LAMP MICROSCOPE INSPECTION OXIDE THICKNESS NANOSPEC 2 WAFERS /LOT VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 2 DEFECTS PER FIELD OF VIEW OXIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 2 DEFECTS PER FIELD OF VIEW SPC TECHNIQUE LOGBOOK LOGBOOK AS APPLICABLE LOGBOOK NITRIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE ACTIVE MASK RF PLASMA ETCH VISUAL INSPECTION CRITICAL DIMENSIONS MICROSCOPE 400X “S” PATTERN SCAN OF THE WAFERS PRODUCTION LOG P FIELD IMPLANT MASK RESIST MASK HF ETCH BATH VISUAL INSPECTION MICROSCOPE 400X “S” PATTERN SCAN OF THE WAFERS PRODUCTION LOG BORON FIELD IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS / LOT LOGBOOK CMOS STRIP RESIST RF PLASMA SULFURIC ACID VISUAL INSPECTION MICROSCOPE 100X “S” PATTERN SCAN OF THE WAFERS LOGBOOK N-FIELD IMPLANT MASK RESIST MASK HF ETCH BATH UV VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 2 DEFECTS PER FIELD OF VIEW PRODUCTION LOG VISUAL INSPECTION MICROSCOPE 100X “S” PATTERN SCAN OF THE WAFERS IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS / LOT LOGBOOK RF PLASMA SULFURIC ACID VISUAL INSPECTION MICROSCOPE 100X “S” PATTERN SCAN OF THE WAFERS LOGBOOK VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 2 DEFECTS PER FIELD OF VIEW LOGBOOK OXIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE PHOS FIELD IMPLANT CMOS STRIP RESIST LOCOS OXIDE OXIDATION FURNACE PLASMA NITRIDE STRIP RF PLASMA ETCH VISUAL UV LAMP (100%) 20X MICROSCOPE 2 WAFERS/RUN < 2 DEFECTS PER FIELD OF VIEW LOGBOOK CMOS CAP MASK RESIST MASK HF ETCHANT BATH CRITICAL DIMENSIONS OPTICAL MICROSCOPE 100X “S” PATTERN SCAN OF THE WAFERS PRODUCTION LOG CAP IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS / LOT LOGBOOK CMOS STRIP RESIST RF PLASMA SULFURIC ACID VISUAL INSPECTION MICROSCOPE 100X “S” PATTERN SCAN OF THE WAFERS LOGBOOK ETCH PAD OXIDE HF ETCHANT BATH VISUAL MICROSCOPE INSPECTION 2 WAFERS/RUN < 2 DEFECTS PER FIELD OF VIEW LOGBOOK OXIDE THICKNESS NANOSPEC 1 WAFER /CYCLE LINEAR TECHNOLOGY CORPORATION PAGE 2 OF 5 ID 06-09-0102 REV 0 WAFER FABRICATION FLOWCHART – CMOS PROCESS FLOW CHART PROCESS STEP GATE OXIDE DESCRIPTION METHOD & EQUIPMENT SAMPLING PLAN SPC TECHNIQUE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 2 DEFECTS PER FIELD OF VIEW AS APPLICABLE P CH OXIDE THICKNESS NONOSPEC 3 WAFERS/CYCLE LOGBOOK VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 2 DEFECTS PER FIELD OF VIEW N CH OXIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE VISUAL OPTICAL MICROSCOPE 100X “S” PATTERN SCAN OF THE WAFERS PRODUCTION LOG BORON VT IMPLANT IMPLANT DOSE CHECK THEMAWAVE 2 WAFERS/LOT LOGBOOK CMOS STRIP RESIST RF PLASMA SULFURIC ACID VISUAL INSPECTION MICROSCOPE 100X “S” PATTERN SCAN 100% OF THE WAFERS LOGBOOK POLY DEPOSITION FURNACE POLY THICKNESS NANOSPEC 2 WAFERS/CYCLE AS APPLICABLE LOGBOOK CRITICAL NODE BACK ETCH MASK RESIST MASK RF PLASMA AND HF ETCH BATH VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 2 DEFECTS PER FIELD OF VIEW LOGBOOK SINKER PRE DEPOSITION DEPOSITION FURNACE VISUAL UV LAMP MICROSCOPE INSPECTION 100% <10 DEFECTS TREND CHART PER WAFER RS (OHMS/SQ) 4 POINT PROBE 2 TEST WAFERS PER RUN VTP IMPLANT MASK OXIDATION FURNACE INSPECTION/TEST CRITERIA RESIST MASK HF ETCHANT BATH CMOS GATE MASK RESIST MASK RF PLASMA AND HF ETCHANT BATH VISUAL INSPECTION OPTICAL MICROSCOPE 100X “S” PATTERN SCAN OF THE WAFERS AS APPLICABLE PRODUCTION LOG CRITICAL NODE P+ IMPLANT MASK RESIST MASK VISUAL INSPECTION OPTICAL MICROSCOPE 100X “S” PATTERN SCAN OF THE WAFERS PRODUCTION LOG P+ S/D IMPLANT IMPLANT DOSE CHECK THERMAWAFE 2 WAFERS/LOT LOGBOOK CMOS STRIP RESIST RF PLASMA SULFURIC ACID VISUAL INSPECTION MICROSCOPE 100X “S” PATTERN SCAN OF THE WAFERS PRODUCTION LOG N+ IMPLANT MASK RESIST MASK VISUAL INSPECTION MICROSCOPE 100X “S” PATTERN SCAN OF THE WAFERS LOGBOOK N+ S/D IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT LOGBOOK CMOS STRIP RESIST RF PLASMA SULFURIC ACID VISUAL INSPECTION MICROSCOPE 100X “S” PATTERN SCAN OF THE WAFERS LOGBOOK LINEAR TECHNOLOGY CORPORATION PAGE 3 OF 5 ID 06-09-0102 REV 0 WAFER FABRICATION FLOWCHART – CMOS PROCESS FLOW CHART PROCESS STEP SOURCE DRAIN REOX LPOE DESCRIPTION OXIDATION FURNACE LPOE LPCVD FURNACE INSPECTION/TEST CRITERIA METHOD & EQUIPMENT SAMPLING PLAN VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 2 DEFECTS PER FIELD OF VIEW P+ OXIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 2 DEFECTS PER FIELD OF VIEW N+ OXIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 2 DEFECTS PER FIELD OF VIEW LPOE THICKNESS NANOSPEC 3 WAFERS/CYCLE SPC TECHNIQUE LOGBOOK AS APPLICABLE LOGBOOK CMOS GETTER FURNACE RS (OHMS/SQ) 4 POINT PROBE 2 TEST WAFERS PER RUN TREND CHART CMOS CONTACT MASK RESIST MASK HF ETCHANT BATH UV VISUAL UV LAMP MICROSCOPE INSPECTION 2 WAFERS/RUN < 2 DEFECTS PER FIELD OF VIEW PRODUCTION LOG VISUAL INSPECTION MICROSCOPE 100X “S” PATTERN SCAN OF THE WAFERS UV LAMP <5 DEFECTS PER WAFER 100% RS (OHMS/SQ) 4 POINT PROBE 2 TEST CHIP/CYCLE FINAL INSPECT CRITICAL DIMENSIONS OPTICAL MICROSCOPE 2 200X “S” PATTERN SCAN OF THE WAFERS AS APPLICABLE 1000X CRITICAL DIMENSIONS MEASURE 2 WAFERS PER RUN LOT, ACCEPT ON 0 FAILURES PRODUCTION LOG ALUMINUM DEPOSITION DEPOSITION VISUAL SPUTTER MACHINE CMOS METAL MASK RESIST MASK METAL ENCHANT BATH LOGBOOK ALLOY ANNEAL FURNACE VISUAL UV LAMP 100% <10 DEFECTS LOGBOOK PER WAFER LPOM PASSIVATION LPCVD FURNACE VISUAL UV LAMP 100%, MORE THAN 2 COLOR CHANGE IS FAIL 10X MICROSCOPE 3 WAFERS/CYCLE <3 DEFECTS/PER FIELD OF VIEW LPOM THICKNESS NANOSPEC 3 WAFERS/CYCLE PHOSPHOROUS CONCENTRATION 10:1 HF ETCH RATE 3 WAFERS/CYCLE LINEAR TECHNOLOGY CORPORATION AS APPLICABLE PAGE 4 OF 5 ID 06-09-0102 FLOW CHART PROCESS STEP PEN REV 0 WAFER FABRICATION FLOWCHART – CMOS PROCESS DESCRIPTION PECVD NITRIDE DEPOSITION INSPECTION/TEST CRITERIA SAMPLING PLAN SPC TECHNIQUE UV LAMP 100%, MORE THAN 2 COLOR CHANGE IS FAIL TREND CHART 10X MICROSCOPE 3 WAFERS/CYCLE <5 DEFECTS/PER FIELD OF VIEW PEN THICKNESS NANOSPEC 3 WAFERS/CYCLE INDEX OF REFRACTION ELIPSOMETER 3 WAFERS/CYCLE FINAL INSPECT OPTICAL MICROSCOPE 100X “S” PATTERN SCAN OF THE WAFER PRODUCTION LOG 100% LOGBOOK LOGBOOK VISUAL METHOD & EQUIPMENT PAD MASK RESIST MASK RF PLASMA ETCH AND HF ETCHANT BATH ELECTRICAL TEST LOMAC PARAMETRIC ANALYZER BACKLAP DISCO N/A N/A N/A BACKSIDE GOLD BACKSIDE METALLIZATION VISUAL UN-AIDED EYE 100% SEM STEP COVERAGE 2 PHOTOS SCANNING ELECTRON MICROSCOPE CMOS = 1 WAFER PER WEEK GENERAL METAL 1 PHOTO LINEAR TECHNOLOGY CORPORATION LOGBOOK NWELL & PWELL = 1 WAFER EVERY RUN PAGE 5 OF 5