CMOS Process

ID 06-09-0102
REV 0 WAFER FABRICATION FLOWCHART – CMOS PROCESS
WAFER FABRICATION FLOWCHART
INCOMING
QUALITY INSPECTION AND GATE
Vendor:
Product:
Package:
Location of Wafer Fab:
Assembly:
Final Test:
Q.C. Test:
Source Accept Test:
Quality Contact:
Linear Technology Corporation
CMOS Products
All Package Types
Linear Technology Corp., Milpitas, CA./ Camas, WA
Linear Technology Corporation, Penang, Malaysia or
any approved assembly subcontractor
Linear Technology Corp., Milpitas, CA., Singapore
Linear Technology Corp., Milpitas, CA., Singapore
Linear Technology Corp., Milpitas, CA., Singapore
Naib Girn, LTC Milpitas, CA
(408) 432-1900 Ext. 2519
FLOW CHART
PROCESS STEP
INCOMING RAW
MATERIAL
INSPECTION
INITIAL
OXIDATION
DESCRIPTION
WAFERS
INSPECTION/TEST
CRITERIA
MANUFACTURING PROCESS
QUALITY MONITOR / SURVEILLANCE
REWORK
METHOD &
EQUIPMENT
SAMPLING
PLAN
VISUAL: SCRATCHES,
PITS, HAZE, CRATERS,
DIMPLES,
CONTAMINATION
1 X INSPECTION
1.0% AQL TO
2.5 AQL LEVEL 1
OXYGEN/CARBON
MEASUREMENT
INFRARED
SPECTROMETER
S/S=2,
ACC = 0
RESISTIVITY /
CONDUCTIVITY
MAGNETRON V/I
METER
S/S=2,
ACC = 0
DIMENSIONAL
CALIPERS
2.5% AQL, LEVEL 1
THICKNESS AND
TAPER/BOW
DIAL THICKNESS
GAGE
2.5% AQL, LEVEL 1
ORIENTATION
BREAK TEST
S/S=1.
ACC = 0
C OF C VERIFICATION
AGAINST “MPS”
REQUIREMENTS
EACH BATCH
RETICLE
VISUAL, C.D.
MEASUREMENTS
EACH PLATE
CHEMICALS
C OF C VERIFICATION
AGAINST “MPS”
REQUIREMENTS
GASES
C OF C VERIFICATION
AGAINST “MPS”
REQUIREMENTS
TARGETS
C OF C VERIFICATION
OXIDATION
FURNACE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 2 DEFECTS PER
FIELD OF VIEW
OXIDE THICKNESS
NANOSPEC
3 WAFERS / CYCLE
SPC
TECHNIQUE
LOGBOOK
LOGBOOK
LOGBOOK
P-WELL MASK
RESIST MASK
HF ETCH BATH
VISUAL
OPTICAL
MICROSCOPE 100X
“S” PATTERN SCAN
OF THE WAFERS
PRODUCTION
LOG
PRE IMPLANT
OXIDATION
OXIDATION
FURNACE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 2 DEFECTS PER
FIELD OF VIEW
LOGBOOK
OXIDE THICKNESS
NANOSPEC
3 WAFERS/CYCLE
P-WELL IMPLANT
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS/LOT
LOGBOOK
P-WELL DRIVE
FURNACE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 2 DEFECTS PER
FIELD OF VIEW
LOGBOOK
OXIDE THICKNESS
NANOSPEC
3 WAFERS/CYCLE
LINEAR TECHNOLOGY CORPORATION
PAGE 1 OF 5
ID 06-09-0102
REV 0 WAFER FABRICATION FLOWCHART – CMOS PROCESS
FLOW CHART
PROCESS STEP
STRIP ALL OXIDE
PAD OXIDATION
NITRIDE
DEPOSITION
DESCRIPTION
HF ETCH BATH
OXIDATION
FURNACE
NITRIDE FURNACE
INSPECTION/TEST
CRITERIA
METHOD &
EQUIPMENT
SAMPLING
PLAN
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
OXIDE THICKNESS
NANOSPEC
2 WAFERS /LOT
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 2 DEFECTS PER
FIELD OF VIEW
OXIDE THICKNESS
NANOSPEC
3 WAFERS/CYCLE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 2 DEFECTS PER
FIELD OF VIEW
SPC
TECHNIQUE
LOGBOOK
LOGBOOK
AS
APPLICABLE
LOGBOOK
NITRIDE THICKNESS
NANOSPEC
3 WAFERS/CYCLE
ACTIVE MASK
RF PLASMA ETCH
VISUAL INSPECTION
CRITICAL DIMENSIONS
MICROSCOPE 400X
“S” PATTERN SCAN
OF THE WAFERS
PRODUCTION
LOG
P FIELD IMPLANT
MASK
RESIST MASK HF
ETCH BATH
VISUAL INSPECTION
MICROSCOPE 400X
“S” PATTERN SCAN
OF THE WAFERS
PRODUCTION
LOG
BORON FIELD
IMPLANT
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS / LOT
LOGBOOK
CMOS STRIP
RESIST
RF PLASMA
SULFURIC ACID
VISUAL INSPECTION
MICROSCOPE 100X
“S” PATTERN SCAN
OF THE WAFERS
LOGBOOK
N-FIELD IMPLANT
MASK
RESIST MASK HF
ETCH BATH
UV VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 2 DEFECTS PER
FIELD OF VIEW
PRODUCTION
LOG
VISUAL INSPECTION
MICROSCOPE 100X
“S” PATTERN SCAN
OF THE WAFERS
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS / LOT
LOGBOOK
RF PLASMA
SULFURIC ACID
VISUAL INSPECTION
MICROSCOPE 100X
“S” PATTERN SCAN
OF THE WAFERS
LOGBOOK
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 2 DEFECTS PER
FIELD OF VIEW
LOGBOOK
OXIDE THICKNESS
NANOSPEC
3 WAFERS/CYCLE
PHOS FIELD
IMPLANT
CMOS STRIP
RESIST
LOCOS OXIDE
OXIDATION
FURNACE
PLASMA NITRIDE
STRIP
RF PLASMA ETCH
VISUAL
UV LAMP (100%)
20X MICROSCOPE
2 WAFERS/RUN
< 2 DEFECTS PER
FIELD OF VIEW
LOGBOOK
CMOS CAP MASK
RESIST MASK HF
ETCHANT BATH
CRITICAL DIMENSIONS
OPTICAL
MICROSCOPE 100X
“S” PATTERN SCAN
OF THE WAFERS
PRODUCTION
LOG
CAP IMPLANT
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS / LOT
LOGBOOK
CMOS STRIP
RESIST
RF PLASMA
SULFURIC ACID
VISUAL INSPECTION
MICROSCOPE 100X
“S” PATTERN SCAN
OF THE WAFERS
LOGBOOK
ETCH PAD OXIDE
HF ETCHANT BATH
VISUAL
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 2 DEFECTS PER
FIELD OF VIEW
LOGBOOK
OXIDE THICKNESS
NANOSPEC
1 WAFER /CYCLE
LINEAR TECHNOLOGY CORPORATION
PAGE 2 OF 5
ID 06-09-0102
REV 0 WAFER FABRICATION FLOWCHART – CMOS PROCESS
FLOW CHART
PROCESS STEP
GATE OXIDE
DESCRIPTION
METHOD &
EQUIPMENT
SAMPLING
PLAN
SPC
TECHNIQUE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 2 DEFECTS PER
FIELD OF VIEW
AS
APPLICABLE
P CH OXIDE THICKNESS
NONOSPEC
3 WAFERS/CYCLE
LOGBOOK
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 2 DEFECTS PER
FIELD OF VIEW
N CH OXIDE THICKNESS
NANOSPEC
3 WAFERS/CYCLE
VISUAL
OPTICAL
MICROSCOPE 100X
“S” PATTERN SCAN
OF THE WAFERS
PRODUCTION
LOG
BORON VT IMPLANT IMPLANT
DOSE CHECK
THEMAWAVE
2 WAFERS/LOT
LOGBOOK
CMOS STRIP
RESIST
RF PLASMA
SULFURIC ACID
VISUAL INSPECTION
MICROSCOPE 100X
“S” PATTERN SCAN
100% OF THE
WAFERS
LOGBOOK
POLY DEPOSITION
FURNACE
POLY THICKNESS
NANOSPEC
2 WAFERS/CYCLE
AS
APPLICABLE
LOGBOOK
CRITICAL
NODE
BACK ETCH MASK
RESIST MASK RF
PLASMA AND HF
ETCH BATH
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 2 DEFECTS PER
FIELD OF VIEW
LOGBOOK
SINKER PRE
DEPOSITION
DEPOSITION
FURNACE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
100% <10 DEFECTS TREND CHART
PER WAFER
RS (OHMS/SQ)
4 POINT PROBE
2 TEST WAFERS
PER RUN
VTP IMPLANT MASK
OXIDATION
FURNACE
INSPECTION/TEST
CRITERIA
RESIST MASK HF
ETCHANT BATH
CMOS GATE MASK
RESIST MASK RF
PLASMA AND HF
ETCHANT BATH
VISUAL INSPECTION
OPTICAL
MICROSCOPE 100X
“S” PATTERN SCAN
OF THE WAFERS
AS
APPLICABLE
PRODUCTION
LOG
CRITICAL
NODE
P+ IMPLANT MASK
RESIST MASK
VISUAL INSPECTION
OPTICAL
MICROSCOPE 100X
“S” PATTERN SCAN
OF THE WAFERS
PRODUCTION
LOG
P+ S/D IMPLANT
IMPLANT
DOSE CHECK
THERMAWAFE
2 WAFERS/LOT
LOGBOOK
CMOS STRIP
RESIST
RF PLASMA
SULFURIC ACID
VISUAL INSPECTION
MICROSCOPE 100X
“S” PATTERN SCAN
OF THE WAFERS
PRODUCTION
LOG
N+ IMPLANT MASK
RESIST MASK
VISUAL INSPECTION
MICROSCOPE 100X
“S” PATTERN SCAN
OF THE WAFERS
LOGBOOK
N+ S/D IMPLANT
IMPLANT
DOSE CHECK
THERMAWAVE
2 WAFERS/LOT
LOGBOOK
CMOS STRIP
RESIST
RF PLASMA
SULFURIC ACID
VISUAL INSPECTION
MICROSCOPE 100X
“S” PATTERN SCAN
OF THE WAFERS
LOGBOOK
LINEAR TECHNOLOGY CORPORATION
PAGE 3 OF 5
ID 06-09-0102
REV 0 WAFER FABRICATION FLOWCHART – CMOS PROCESS
FLOW CHART
PROCESS STEP
SOURCE DRAIN
REOX
LPOE
DESCRIPTION
OXIDATION
FURNACE
LPOE LPCVD
FURNACE
INSPECTION/TEST
CRITERIA
METHOD &
EQUIPMENT
SAMPLING
PLAN
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 2 DEFECTS PER
FIELD OF VIEW
P+ OXIDE THICKNESS
NANOSPEC
3 WAFERS/CYCLE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 2 DEFECTS PER
FIELD OF VIEW
N+ OXIDE THICKNESS
NANOSPEC
3 WAFERS/CYCLE
VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 2 DEFECTS PER
FIELD OF VIEW
LPOE THICKNESS
NANOSPEC
3 WAFERS/CYCLE
SPC
TECHNIQUE
LOGBOOK
AS
APPLICABLE
LOGBOOK
CMOS GETTER
FURNACE
RS (OHMS/SQ)
4 POINT PROBE
2 TEST WAFERS
PER RUN
TREND CHART
CMOS CONTACT
MASK
RESIST MASK HF
ETCHANT BATH
UV VISUAL
UV LAMP
MICROSCOPE
INSPECTION
2 WAFERS/RUN
< 2 DEFECTS PER
FIELD OF VIEW
PRODUCTION
LOG
VISUAL INSPECTION
MICROSCOPE 100X
“S” PATTERN SCAN
OF THE WAFERS
UV LAMP
<5 DEFECTS PER
WAFER 100%
RS (OHMS/SQ)
4 POINT PROBE
2 TEST
CHIP/CYCLE
FINAL INSPECT CRITICAL
DIMENSIONS
OPTICAL
MICROSCOPE 2
200X
“S” PATTERN SCAN
OF THE WAFERS
AS
APPLICABLE
1000X
CRITICAL
DIMENSIONS
MEASURE 2
WAFERS PER RUN
LOT, ACCEPT ON 0
FAILURES
PRODUCTION
LOG
ALUMINUM
DEPOSITION
DEPOSITION
VISUAL
SPUTTER MACHINE
CMOS METAL MASK RESIST MASK
METAL ENCHANT
BATH
LOGBOOK
ALLOY
ANNEAL FURNACE
VISUAL
UV LAMP
100% <10 DEFECTS LOGBOOK
PER WAFER
LPOM
PASSIVATION
LPCVD FURNACE
VISUAL
UV LAMP
100%, MORE THAN
2 COLOR CHANGE
IS FAIL
10X MICROSCOPE
3 WAFERS/CYCLE
<3 DEFECTS/PER
FIELD OF VIEW
LPOM THICKNESS
NANOSPEC
3 WAFERS/CYCLE
PHOSPHOROUS
CONCENTRATION
10:1 HF ETCH RATE
3 WAFERS/CYCLE
LINEAR TECHNOLOGY CORPORATION
AS
APPLICABLE
PAGE 4 OF 5
ID 06-09-0102
FLOW CHART
PROCESS STEP
PEN
REV 0 WAFER FABRICATION FLOWCHART – CMOS PROCESS
DESCRIPTION
PECVD NITRIDE
DEPOSITION
INSPECTION/TEST
CRITERIA
SAMPLING
PLAN
SPC
TECHNIQUE
UV LAMP
100%, MORE THAN
2 COLOR CHANGE
IS FAIL
TREND CHART
10X MICROSCOPE
3 WAFERS/CYCLE
<5 DEFECTS/PER
FIELD OF VIEW
PEN THICKNESS
NANOSPEC
3 WAFERS/CYCLE
INDEX OF REFRACTION
ELIPSOMETER
3 WAFERS/CYCLE
FINAL INSPECT
OPTICAL
MICROSCOPE 100X
“S” PATTERN SCAN
OF THE WAFER
PRODUCTION
LOG
100%
LOGBOOK
LOGBOOK
VISUAL
METHOD &
EQUIPMENT
PAD MASK
RESIST MASK RF
PLASMA ETCH AND
HF ETCHANT BATH
ELECTRICAL TEST
LOMAC
PARAMETRIC
ANALYZER
BACKLAP
DISCO
N/A
N/A
N/A
BACKSIDE GOLD
BACKSIDE
METALLIZATION
VISUAL
UN-AIDED EYE
100%
SEM
STEP COVERAGE
2 PHOTOS
SCANNING
ELECTRON
MICROSCOPE
CMOS = 1 WAFER
PER WEEK
GENERAL METAL
1 PHOTO
LINEAR TECHNOLOGY CORPORATION
LOGBOOK
NWELL & PWELL =
1 WAFER EVERY
RUN
PAGE 5 OF 5
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