Down

N1N6
0NC
WF
WFN
1N60
Silicon N-Ch
annel MOS
FET
Cha
OSF
Features
■0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 6.1nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
Th is Power MO SFET is pro du ced using Winsemi ’s ad van ced
planar stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch mode power supply. electronic
Lamp ballasts based on half bridge and UPS.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
600
V
Continuous Drain Current(@Tc=25℃)
0.5
A
Continuous Drain Current(@Tc=100℃)
0.31
A
2.0
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
V GS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
47
mJ
E AR
Repetitive Avalanche Energy
(Note 1)
3.0
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.2
V/ns
2.0
W
0.025
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ, Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Parameter
R QJC
R QJA
Value
Units
Min
Typ
Max
Thermal Resistance, Junction-to-Case
-
-
62.5
℃/W
Thermal Resistance, Junction-to-Ambient
-
-
120
℃/W
WT-F015-Rev.A0 Mar.2013
1 /7
[email protected] Microelectronics Co., Ltd., All right reserved.
N1N6
0NC
WF
WFN
1N60
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Symbol
Test Condition
Min
Type
Max
Unit
IGSS
VGS = ±30 V, VDS = 0 V
-
-
±100
nA
V(BR)GSS
IG = ±10 μA, VDS = 0 V
±30
-
-
V
VDS = 600 V, VGS = 0 V
-
-
10
μA
VDS = 480 V, Tc = 125°°C
-
-
100
μA
600
-
-
V
ID=250μA,Referenced to25℃
-
0.6
-
V/℃
IDSS
Drain−source breakdown voltage
V(BR)DSS
Break Voltage Temperature
ΔBV DSS /
ID = 250 μA, VGS = 0 V
ΔTJ
Coefficient
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
2
-
4
V
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID = 0.5A
-
11
15
Ω
Forward Transconductance
gfs
VDS = 40 V, ID = 0.5A
-
0.8
-
S
Input capacitance
C iss
VDS = 25 V,
-
178
221
Reverse transfer capacitance
C rss
VGS = 0 V,
-
4
5
Output capacitance
C oss
f = 1 MHz
-
19
27
VDD =300 V,
-
16
46
ID =1A
-
45
104
-
25
61
-
36
81
-
6.1
7.2
Turn−on delay time
Rise time
td(on)
tr
Switching time
Turn−off delay time
Fall time
td(off)
Gate−source charge
Gate−drain (“miller”) Charge
(Note4,5)
tf
Total gate charge (gate−source
plus gate−drain)
RG=25Ω
pF
ns
VDD =4 80 V,
Qg
Qgs
VGS = 10 V,
nC
ID = 1 A
(Note4,5)
Qgd
-
1.0
-
-
3.0
-
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
1.0
A
Pulse drain reverse current
IDRP
-
-
-
4.0
A
Forward voltage (diode)
VDSF
IDR = 1A, VGS = 0 V
-
-
1.5
V
Reverse recovery time
trr
IDR = 1A, VGS = 0 V,
-
185
-
ns
Reverse recovery charge
Qrr
dIDR / dt = 100 A / μs
-
0.51
-
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=59mH,IAS=1A,VDD =50V,RG=25Ω,Starting T J=25℃
3.ISD≤1A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2 /7
Steady, keep you advance
N1N6
0NC
WF
WFN
1N60
3 /7
Steady, keep you advance
N1N6
0NC
WF
WFN
1N60
4 /7
Steady, keep you advance
N1N6
0NC
WF
WFN
1N60
10 Gate Tes
cuit & Waveform
Fig.
Fig.1
estt Cir
Circ
11 Res
e Swit
ching Tes
cuit & Waveform
Fig.
Fig.1
esiistiv
ive
itc
estt Cir
Circ
12 Un
clamped In
ducti
ve Switchi
ng Test Cir
cuit & Waveform
Fig.
Fig.1
Unc
Ind
tiv
hin
Circ
5 /7
Steady, keep you advance
N1N6
0NC
WF
WFN
1N60
13 Pea
k Diode Rec
overy dv/dt Test Cir
cuit & Waveform
Fig.
Fig.1
eak
eco
Circ
6 /7
Steady, keep you advance
N1N6
0NC
WF
WFN
1N60
92
TO
TO92
cka
ge Dim
ension
Pa
Pac
kage
Dime
Unit: mm
7 /7
Steady, keep you advance