10 0B06PPA004RC L025A09 D2 14

10-0B06PPA010RC-L025A09
datasheet
flow PIM 0B + PFC
600 V / 10 A
Features
flow 0 B housing
● Converter, PFC, inverter in one housing
● New high speed IGBT for PFC
● One screw heatsink mounting
Target applications
Schematic
● Embedded drives
Types
● 10-0B06PPA010RC-L025A09
Maximum Ratings
Tj=25°C, unless otherwise specified
Inverter Switch
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04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
PFC Switch
PFC Diode
PFC Switch Protection Diode
Rectifier Diode
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04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
Characteristic Values
Inverter Switch
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04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
PFC Switch
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04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
PFC Diode
PFC Protection Diode
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04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
Rectifier Diode
Thermistor
Module Properties
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04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
Inverter Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
I C = f(V CE)
35
IC (A)
45
IC(A)
IGBT
40
30
35
25
30
20
25
20
15
15
10
10
5
5
0
0
0
1
2
3
4
0
5
0,5
1
1,5
2
2,5
3
3,5
4
4,5
tp =
250
µs
V GE=
15
V
T j:
25 °C
tp =
250
125 °C
Tj =
150
150 °C
V GE from
7 V to 17 V in steps of 1 V
Typical transfer characteristics
5
VCE (V)
VCE (V)
IGBT
µs
°C
Transient thermal impedance as a function of pulse width
I C = f(V CE)
IGBT
Z thJH = f(t p)
10
ZthJH (K/W)
IC (A)
10
8
1
6
4
0.5
0,1
0.2
0.1
0.05
2
0.02
0.01
0.005
0
0,01
1,00E-04
0
0
2
4
6
8
10
12
1,00E-03
1,00E-02
1,00E-01
tp =
100
µs
V CE =
10
V
T j:
1,00E+00
1,00E+01
1,00E+02
tp(s)
VCE (V)
25 °C
D =
tp / T
125 °C
R thJH =
2,15
K/W
150 °C
IGBT thermal model values
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7
R (K/W)
Tau (s)
7,60E-02
2,82E+00
1,59E-01
4,19E-01
1,01E+00
6,63E-02
6,48E-01
2,63E-02
2,57E-01
3,72E-03
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
Inverter Switch Characteristics
Gate voltage vs Gate charge
IGBT
V GE = f(Q g)
VGE (V)
16
480V
14
120V
12
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
Qg (nC)
At
I C=
10
A
IGBT
Short circuit withstand time as a function of VGE
t sc = f(V GE)
I SC = f(V GE)
160
IC (sc)
10
tsc (µS)
IGBT
Typical short circuit collector current as a function of VGE
9
140
8
120
7
100
6
80
5
4
60
3
40
2
20
1
0
0
12
13
14
15
16
12
17
13
14
15
VGE(V)
17
18
19
20
VGE(V)
At
V CE =
400
V
At
V CE ≤
400
V
Tj ≤
150
ºC
Tj ≤
25
ºC
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8
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
PFC Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
90
I C (A)
I C (A)
90
75
75
60
60
45
45
30
30
15
15
0
0
0
1
2
3
4
0
5
1
2
3
4
5
V C E (V)
V C E (V)
tp =
250
µs
25 °C
tp =
250
V GE=
15
V
125 °C
Tj =
125
150 °C
V GE from
7 V to 17 V in steps of 1 V
T j:
Typical transfer characteristics
IGBT
µs
°C
Transient Thermal Impedance as function of Pulse duration
I C = f(V GE)
IGBT
Z th(j-s) = f(t p)
30
Z t h(j
h(j--s)(K/W)
I C (A)
101
25
100
20
15
0,5
10-1
10
0,2
0,1
0,05
0,02
5
0,01
0,005
0
10-2
10-4
0
0
2
4
6
8
10-3
10-2
V G E (V)
tp =
100
µs
25 °C
D=
tp / T
V CE =
10
V
125 °C
R th(j-s) =
1,74
T j:
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150 °C
10-1
10
101
t p (s)
102
K/W
IGBT thermal model values
R th (K/W)
9
1,29E-01
τ (s)
5,83E-01
7,29E-01
6,38E-02
6,55E-01
2,28E-02
1,29E-01
2,24E-03
9,92E-02
3,38E-04
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
PFC Switch Characteristics
Gate voltage vs Gate charge
IGBT
V GE = f(Q G)
V G E (V)
15
130V
12,5
520V
10
7,5
5
2,5
0
0
10
20
30
40
50
60
70
80
Q G (nC)
At
30
I C=
A
PFC Diode Characteristics
FWD
Typical forward characteristics
Z th(j-s) = f(t p)
90
100
Z t h( jj--s) (K/W)
IF (A)
I F = f(V F)
FWD
Transient thermal impedance as a function of pulse width
75
60
10-1
45
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
30
15
0
10-2
0
1
2
3
4
5
10-4
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
1032
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
2,09
K/W
150 °C
FWD thermal model values
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10
R (K/W)
4,06E-02
τ (s)
7,59E+00
1,41E-01
7,59E-01
6,53E-01
8,62E-02
8,80E-01
2,66E-02
2,25E-01
4,54E-03
1,55E-01
5,55E-04
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
PFC Protection Diode characteristics
FWD
Typical forward characteristics
Z th(j-s) = f(t p)
18
101
Z t h(j
h(j--s) (K/W)
IF (A)
I F = f(V F)
FWD
Transient thermal impedance as a function of pulse width
15
100
12
9
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
6
3
0
10-2
0
0,5
1
1,5
2
2,5
3
10-5
10-4
10-3
VF (V)
tp =
250
µs
10-2
10-1
100
101
t p (s)
25 °C
T j:
125 °C
D =
tp / T
150 °C
R th(j-s) =
3,01
K/W
FWD thermal model values
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R (K/W)
5,15E-02
τ (s)
9,38E+00
9,53E-02
8,91E-01
3,22E-01
1,25E-01
1,35E+00
2,97E-02
8,32E-01
8,19E-03
3,58E-01
1,78E-03
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
Rectifier characteristics
Typical f orward charact erist ics
Rect if ier Diode
Rectif ier Diode
Z th(j-s) = f(t p)
21
101
Z t h(j
h(j--s) (K/W)
IF (A)
I F = f(V F)
Transient t hermal impedance as a f unct ion of pulse widt h
18
15
100
12
9
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
6
3
10-2
0
0
0,5
1
1,5
2
2,5
10-4
3
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D =
tp / T
125 °C
R th(j-s) =
2,09
K/W
150 °C
Diode thermal model values
R (K/W)
4,86E-02
1,03E+01
1,45E-01
6,91E-01
τ (s)
1,18E+00
6,09E-02
5,40E-01
1,88E-02
1,74E-01
1,96E-03
Thermistor Characteristics
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
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04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
Inverter Switching Definitions
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a function of gate resistor
E = f(I C)
E = f(R G )
0,8
0,8
E (mWs)
E (mWs)
Typical switching energy losses as a function of collector current
Eon
0,6
Eon
0,6
Eon
Eon
0,4
0,4
Eoff
Eoff
Eoff
Eoff
0,2
0,2
0
0
0
5
10
15
20
0
I C(A)
25 °C
With an inductive load at
400
V
V CE =
V GE =
±15
V
R gon =
32
Ω
R goff =
32
Ω
T j:
32
64
96
With an inductive load at
125 °C
V CE =
400
V
150 °C
V GE =
±15
V
10
A
IC =
Figure 3.
FWD
128
RG (Ω )
T j:
125 °C
150 °C
Figure 4.
FWD
Typical reverse recovery energy loss as a function of gate resistor
E rec = f(I c)
E rec = f(R G )
E (mWs)
E (mWs)
Typical reverse recovery energy loss as a function of collector current
0,4
Erec
160
25 °C
0,4
0,3
0,3
0,2
0,2
Erec
Erec
Erec
0,1
0,1
0
0
0
5
10
15
0
20
32
64
96
128
IC (A)
With an inductive load at
25 °C
V CE =
400
V
V GE =
±15
V
R gon =
32
Ω
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T j:
With an inductive load at
125 °C
V CE=
400
V
150 °C
V GE=
±15
V
10
A
I C=
13
RG(Ω )
160
25 °C
T j:
125 °C
150 °C
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
Inverter Switching Definitions
Figure 5.
IGBT
Figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R G )
1
t (μs)
t (μs)
1
tdon
tdoff
0,1
tdoff
0,1
tdon
tr
tr
tf
tf
0,01
0,01
0,001
0,001
0
5
10
15
0
20
32
64
96
128
RG(Ω)
RG(Ω)
With an inductive load at
With an inductive load at
Tj =
125
°C
Tj =
125
°C
V CE =
400
V
V CE =
400
V
±15
V
10
A
V GE =
±15
V
V GE =
R gon =
32
Ω
IC =
R goff =
32
Ω
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C )
t rr = f(R gon)
0,32
0,4
t rr(μs)
t rr(μs)
160
trr
0,24
trr
0,3
trr
trr
0,16
0,2
0,08
0,1
0
0
0
5
10
15
20
0
32
64
96
128
I C (A)
At
V CE=
400
V
V GE =
±15
V
R gon =
32
Ω
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T j:
160
RGon(Ω)
25 °C
At
V CE=
125 °C
V GE =
150 °C
I C=
14
400
V
±15
V
10
A
25 °C
T j:
125 °C
150 °C
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
Inverter Switching Definitions
Figure 9.
FWD
Figure 10.
FWD
Typical reverse recovery charge as a function of collector current
Typical reverse recovery charge as a function of IGBT turn on gate resistor
Q rr = f(I C)
Q rr = f(R gon)
1,6
Q rr (µ
µ C)
Q rr (µC)
1,2
Qrr
1,2
0,9
0,8
Qrr
0,6
Qrr
Qrr
0,4
At
0,3
0
0
0
5
10
15
20
0
32
64
96
128
160
RGon(Ω)
I C (A)
At
400
V
V GE =
V CE=
±15
V
R gon =
32
Ω
25 °C
T j:
At
V CE=
125 °C
V GE =
150 °C
I C=
Figure 11.
FWD
400
V
±15
V
10
A
25 °C
T j:
125 °C
150 °C
Figure 12.
FWD
Typical reverse recovery current as a function of IGBT turn on gate resistor
I RRM = f(I C)
I RRM = f(R gon)
12
I rrM (A)
I rrM (A)
Typical reverse recovery current as a function of collector current
IRRM
20
15
9
IRRM
6
10
3
5
IRRM
IRRM
0
0
0
5
10
15
0
20
32
64
96
128
I C (A)
At
V CE=
400
V
V GE =
±15
V
R gon =
32
Ω
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25 °C
T j:
At
V CE=
125 °C
V GE =
150 °C
I C=
15
400
V
±15
V
10
A
160
RGo n(Ω)
25 °C
T j:
125 °C
150 °C
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
Inverter Switching Definitions
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of
dI 0/dt ,dI rec/dt = f(I c)
IGBT t urn on gate resist or
600
direc / dt (A/µ
µ s)
di rec / dt (A/µs)
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
dI0/dt
dIrec/dt
2000
dI0/dt
dIrec/dt
450
1500
300
1000
150
500
0
0
0
5
10
15
0
20
32
64
At
V CE=
400
V
V GE =
±15
V
At
V GE =
R gon =
32
Ω
I C=
Figure 15.
96
128
160
RGon(Ω)
I C (A)
V CE=
400
V
±15
V
10
A
IGBT
Reverse bias safe operating area
I C = f(V CE)
I C (A)
25
IC MAX
Ic CHIP
20
MODULE
15
Ic
10
VCE MAX
5
0
0
100
200
300
400
500
600
700
VCE(V)
At
175
°C
R gon =
Tj =
32
Ω
R goff =
32
Ω
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04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
Inverter Switching Definitions
General conditions
Tj
=
125 °C
R gon
R goff
=
=
32 Ω
32 Ω
Figure 1.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for E off)
Figure 2.
IGBT
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for E on)
125
200
tdoff
%
IC
%
VCE
100
VGE 90%
150
VCE 90%
75
VGE
100
IC
50
tEoff
VGE
tdon
VCE
50
25
IC 1%
VGE 10%
VCE 3%
IC 10%
0
0
tEon
-25
-0,2
-0,1
0
0,1
0,2
-50
2,85
0,3
2,93
3,01
3,09
3,17
time (us)
V GE (0%) =
-15
V
V GE (0%) =
-15
V
V GE (100%) =
15
V
V GE (100%) =
15
V
V C (100%) =
400
V
V C (100%) =
400
V
I C (100%) =
10
A
I C (100%) =
10
A
t doff =
0,105
µs
t don =
0,071
µs
t Eoff =
Figure 3.
0,292
µs
t E on =
Figure 4.
0,215
µs
IGBT
Turn-off Switching Waveforms & definition of tf
3,25
IGBT
Turn-on Switching Waveforms & definition of tr
200
125
%
time(us)
%
fitted
IC
IC
VCE
100
150
IC 90%
VCE
75
100
IC 60%
50
IC 90%
tr
IC 40%
50
25
IC 10%
IC10%
0
0
-25
-0,05
tf
-50
0
0,05
0,1
0,15
3
3,05
3,1
time (us)
3,2
time(us)
V C (100%) =
400
V
V C (100%) =
400
V
I C (100%) =
10
A
I C (100%) =
10
A
tf =
0,035
µs
tr =
0,022
µs
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3,15
17
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
Inverter Switching Definitions
Figure 5.
IGBT
Turn-off Switching Waveforms & definition of tEof f
Figure 6.
IGBT
Turn-on Switching Waveforms & definition of tEon
125
200
%
IC 1%
Poff
100
Pon
%
Eoff
150
75
Eon
100
50
50
25
VGE 90%
VCE 3%
VGE 10%
0
0
tEoff
tEon
-50
-25
-0,2
-0,1
0
0,1
0,2
2,9
0,3
2,95
3
3,05
3,1
P off (100%) =
4,00
kW
P on (100%) =
4,00
E off (100%) =
0,18
mJ
E on (100%) =
0,36
mJ
t E off =
0,29
µs
t E on =
0,21
µs
Figure 7.
3,15
3,2
3,25
time(us)
time (us)
kW
FWD
Turn-off Switching Waveforms & definition of trr
150
Id
%
100
trr
50
Vd
0
IRRM 10%
fitted
-50
IRRM 90%
IRRM 100%
-100
-150
3
3,05
3,1
3,15
3,2
3,25
3,3
3,35
3,4
time(us)
V d (100%) =
400
V
I d (100%) =
10
A
I RRM (100%) =
-10
A
t rr =
0,233
µs
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04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
Inverter Switching Definitions
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for E rec)
125
150
%
%
Erec
Qrr
Id
100
100
tErec
75
tQrr
50
50
0
25
Prec
-50
0
-100
2,9
3,1
3,3
3,5
3,7
3,9
4,1
-25
4,3
2,9
3,1
3,3
3,5
3,7
time(us)
4,1
4,3
time(us)
I d (100%) =
10
A
P rec (100%) =
4,00
Q rr (100%) =
0,89
µC
E rec (100%) =
0,24
mJ
t Q rr =
1,00
µs
t E rec =
1,00
µs
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3,9
19
kW
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
PFC Switching Definitions
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a function of gate resistor
E = f(I C)
E = f(R G )
0,6
0,8
E (mWs)
E (mWs)
Typical switching energy losses as a function of collector current
Eon
0,6
Eon
0,45
Eon
Eon
0,4
0,3
0,2
0,15
Eoff
Eoff
Eoff
Eoff
0
0
0
5
10
15
20
0
I C(A)
25 °C
With an inductive load at
400
V
V CE =
V GE =
15/0
V
R gon =
16
Ω
R goff =
16
Ω
T j:
16
32
48
With an inductive load at
125 °C
V CE =
400
V
150 °C
V GE =
15/0
V
10
A
IC =
Figure 3.
FWD
64
RG (Ω )
T j:
125 °C
150 °C
Figure 4.
FWD
Typical reverse recovery energy loss as a function of gate resistor
E rec = f(I c)
E rec = f(R G )
E (mWs)
E (mWs)
Typical reverse recovery energy loss as a function of collector current
0,28
80
25 °C
0,2
Erec
0,15
0,21
Erec
0,1
0,14
Erec
Erec
0,05
0,07
0
0
0
5
10
15
0
20
16
32
48
64
IC (A)
With an inductive load at
25 °C
V CE =
400
V
V GE =
15/0
V
R gon =
16
Ω
Copyright Vincotech
T j:
With an inductive load at
125 °C
V CE=
400
V
150 °C
V GE=
15/0
V
10
A
I C=
20
RG(Ω )
80
25 °C
T j:
125 °C
150 °C
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
PFC Switching Definitions
Figure 5.
IGBT
Figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R G )
t (μs)
1
t (μs)
1
tdoff
tdoff
0,1
0,1
tdon
tr
tdon
tr
0,01
0,01
tf
tf
0,001
0,001
0
5
10
15
0
20
16
32
48
64
With an inductive load at
With an inductive load at
Tj =
125
°C
Tj =
125
°C
V CE =
400
V
V CE =
400
V
15/0
V
10
A
V GE =
15/0
V
V GE =
R gon =
16
Ω
IC =
R goff =
16
Ω
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C )
t rr = f(R gon)
0,1
0,1
t rr(μs)
t rr(μs)
80
RG(Ω)
I C(A)
trr
trr
0,075
0,075
trr
0,05
0,05
0,025
0,025
0
trr
0
0
5
10
15
20
0
16
32
48
64
I C (A)
At
V CE=
400
V
V GE =
15/0
V
R gon =
16
Ω
Copyright Vincotech
T j:
80
RGon(Ω)
25 °C
At
V CE=
125 °C
V GE =
150 °C
I C=
21
400
V
15/0
V
10
A
25 °C
T j:
125 °C
150 °C
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
PFC Switching Definitions
Figure 9.
FWD
Figure 10.
FWD
Typical reverse recovery charge as a function of collector current
Typical reverse recovery charge as a function of IGBT turn on gate resistor
Q rr = f(I C)
Q rr = f(R gon)
1,6
Q rr (µ
µ C)
Q rr (µC)
1,2
Qrr
1,2
0,9
0,8
Qrr
0,6
Qrr
Qrr
0,4
At
0,3
0
0
0
5
10
15
20
0
16
32
48
64
80
RGon(Ω)
I C (A)
At
400
V
V GE =
V CE=
15/0
V
R gon =
16
Ω
25 °C
T j:
At
V CE=
125 °C
V GE =
150 °C
I C=
Figure 11.
FWD
400
V
15/0
V
10
A
25 °C
T j:
125 °C
150 °C
Figure 12.
FWD
Typical reverse recovery current as a function of IGBT turn on gate resistor
I RRM = f(I C)
I RRM = f(R gon)
25
I rrM (A)
I rrM (A)
Typical reverse recovery current as a function of collector current
IRRM
20
30
24
IRRM
18
IRRM
10
12
IRRM
5
6
15
0
0
0
5
10
15
0
20
16
32
48
64
At
400
V
V GE =
V CE=
15/0
V
R gon =
16
Ω
Copyright Vincotech
25 °C
T j:
80
RGo n(Ω)
I C (A)
At
V CE=
125 °C
V GE =
150 °C
I C=
22
400
V
15/0
V
10
A
25 °C
T j:
125 °C
150 °C
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
PFC Switching Definitions
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of
dI 0/dt ,dI rec/dt = f(I c)
IGBT t urn on gate resist or
4000
direc / dt (A/µ
µ s)
di rec / dt (A/µs)
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
dI0/dt
dIrec/dt
6000
dI0/dt
dIrec/dt
3000
4500
2000
3000
1000
1500
0
0
0
5
10
15
0
20
16
32
At
V CE=
400
V
At
V CE=
V GE =
15/0
V
V GE =
R gon =
16
Ω
I C=
Figure 15.
48
64
80
RGon(Ω)
I C (A)
400
V
15/0
V
10
A
IGBT
Reverse bias safe operating area
I C = f(V CE)
I C (A)
25
IC MAX
Ic CHIP
20
MODULE
15
Ic
10
VCE MAX
5
0
0
100
200
300
400
500
600
700
VCE(V)
At
175
°C
R gon =
Tj =
16
Ω
R goff =
16
Ω
Copyright Vincotech
23
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
PFC Switching Definitions
General conditions
Tj
=
125 °C
R gon
R goff
=
=
16 Ω
16 Ω
Figure 1.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for E off)
Figure 2.
IGBT
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for E on)
125
350
tdoff
%
IC
%
VCE
300
100
VGE 90%
VCE 90%
250
75
VGE
200
IC
50
150
tEoff
VCE
100
25
tdon
IC 1%
0
VGE 10%
0
-25
-0,2
-0,1
0
0,1
VGE
50
0,2
IC 10%
VCE 3%
tEon
-50
0,3
2,9
2,95
3
3,05
3,1
3,15
time(us)
time (us)
V GE (0%) =
0
V
V GE (0%) =
0
V
V GE (100%) =
15
V
V GE (100%) =
15
V
V C (100%) =
400
V
V C (100%) =
400
V
I C (100%) =
10
A
I C (100%) =
10
A
t doff =
0,189
µs
t don =
0,019
µs
t E off =
Figure 3.
0,230
µs
t E on =
Figure 4.
0,090
µs
IGBT
Turn-off Switching Waveforms & definition of tf
IGBT
Turn-on Switching Waveforms & definition of tr
350
125
%
3,2
%
fitted
IC
VCE
IC
300
100
IC 90%
250
75
200
IC 60%
50
150
VCE
IC 40%
100
tr
25
IC10%
IC 90%
50
0
IC 10%
0
tf
-25
0,05
0,1
0,15
0,2
-50
2,95
0,25
3
3,05
time (us)
3,15
time(us)
V C (100%) =
400
V
V C (100%) =
400
V
I C (100%) =
10
A
I C (100%) =
10
A
tf =
0,004
µs
tr =
0,007
µs
Copyright Vincotech
3,1
24
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
PFC Switching Definitions
Figure 5.
IGBT
Turn-off Switching Waveforms & definition of tEof f
Figure 6.
IGBT
Turn-on Switching Waveforms & definition of tEon
125
250
%
IC 1%
100
%
Pon
Eoff
200
75
150
50
100
Eon
25
50
VGE 90%
VCE 3%
VGE 10%
Poff
0
0
tEoff
-25
-0,1
0
tEon
0,1
0,2
-50
2,95
0,3
3
3,05
P off (100%) =
3,99
kW
P on (100%) =
3,99
E off (100%) =
0,09
mJ
E on (100%) =
0,38
mJ
t E off =
0,23
µs
t E on =
0,09
µs
Figure 7.
3,1
3,15
time(us)
time (us)
kW
FWD
Turn-off Switching Waveforms & definition of trr
150
Id
%
100
trr
50
0
-50
Vd
IRRM 10%
-100
fitted
-150
IRRM 90%
-200
IRRM 100%
-250
2,95
3
3,05
3,1
3,15
time(us)
V d (100%) =
400
V
I d (100%) =
10
A
I RRM (100%) =
-22
A
t rr =
0,066
µs
Copyright Vincotech
25
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
PFC Switching Definitions
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for E rec)
150
150
Qrr
Id
%
%
100
125
Erec
tQrr
50
100
0
tErec
75
-50
50
-100
25
-150
Prec
0
-200
-250
2,9
3
3,1
3,2
-25
3,3
2,9
3
3,1
3,2
time(us)
I d (100%) =
10
A
P rec (100%) =
3,99
Q rr (100%) =
0,93
µC
E rec (100%) =
0,17
mJ
t Q rr =
0,13
µs
t E rec =
0,13
µs
125°C
Copyright Vincotech
3,3
time(us)
kW
25
25 ooCC
25°C
26
125
125 ooCC
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
Ordering Code & Marking
Version
without thermal paste 17mm housing
NN-NNNNNNNNNNNNNN
TTTTTTT WWYY UL
Vinco LLLLL SSSS
Ordering Code
10-0B06PPA010RC-L025A09
Text
Datamatrix
in DataMatrix as
L025A09
in packaging barcode as
L025A09
Name
Date code
UL & Vinco
Lot
Serial
NN-NNNNNNNNNNNNNN-TTTTTTT
WWYY
UL Vinco
LLLLL
SSSS
Serial
Date code
SSSS
WWYY
Type
TTTT-TTT
Lot number
LLLLL
Outline
Pin table [mm]
Pin
X
Y
Func tion
1
24,7
0
DC-Rec t
2
21,7
0
DC-PFC
3
18,7
0
G27
4
15
0
DC-3
5
12
0
G15
6
9
0
DC-2
7
6
0
G13
8
3
0
DC-1
9
0
0
G11
10
0
3
Therm2
11
12
0
0
5,8
10,8
Therm1
G12
13
0
13,8
Ph1
14
5,7
13,8
G14
15
8,7
13,8
Ph2
16
14,4
13,8
Ph3
17
14,4
10,8
G16
18
19,7
9,3
DC+
19
22,9
13,8
PFC
20
27,9
13,8
ACIn1
21
27,9
6,95
ACIn2
22
23,05
6,95 DC+Rect
Copyright Vincotech
27
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
Pinout
Identification
ID
Component
Voltage
Technology
Current
Function
T11-T16
IGBT
600V
10A
Inverter switch
T27
IGBT
650V
30A
PFC Switch
D27
FWD
650V
30A
PFC Diode
D47
Diode
650V
6A
PFC Switch
Protection
Diode
D31-D34
Diode
1600V
7A
Rectifier Diode
Rt
NTC
-
-
Thermistor
Copyright Vincotech
28
Comment
04 Jun. 2015 / Revision 2
10-0B06PPA010RC-L025A09
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
200
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 0 B packages see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-0B06PPA010RC-L025A09-D2-14
04 Jun. 2015
3D drawing, Outline Pin-table (Pin 16 - 17)
1, 27
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
29
04 Jun. 2015 / Revision 2
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