30 P2126PA150SC L280F09Y D1 14

30-P2126PA150SC-L280F09Y
datasheet
flow PACK 2
1200 V / 150 A
Features
flow 2 17mm housing
● IGBT4 (1200V) technology for low saturation losses
and improved EMC behavior
● Compact and low inductive design
● Integrated temperature sensor
Schematic
Target applications
● Industrial Drives
Types
● 30-P2126PA150SC-L280F09Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
1200
V
144
A
450
A
354
W
±20
V
Inverter Switch
Collector-emitter voltage
Collector current
V CES
IC
T j = T jmax
T s = 80 °C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j = T jmax
Gate-emitter voltage
V GES
Short circuit ratings
Maximum Junction Temperature
Copyright Vincotech
T s = 80 °C
t SC
Tj ≤ 150°C
10
µs
V CC
VGE = 15V
800
V
175
°C
T jmax
1
22 Jan. 2016 / Revision 1
30-P2126PA150SC-L280F09Y
datasheet
Parameter
Symbol
Condition
Value
Unit
1200
V
122
A
300
A
212
W
Inverter Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
T j = T jmax
T s = 80°C
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
175
°C
Storage temperature
T stg
-40…+125
°C
Operation temperature under switching
condition
T jop
-40…+(T jmax - 25)
°C
4000
V
Creepage distance
min. 12,7
mm
Clearance
min. 12,7
mm
T j = T jmax
T s = 80°C
Module Properties
Thermal Properties
Isolation Properties
Isolation voltage
Comparative Tracking Index
Copyright Vincotech
V isol
DC Voltage
t p = 2s
> 200
CTI
2
22 Jan. 2016 / Revision 1
30-P2126PA150SC-L280F09Y
datasheet
Characteristic Values
Parameter
Conditions
Symbol
VCE [V]
VGE [V]
VGS [V]
VGS [V]
Vr [V]
Value
IC [A]
ID [A]
IF [A]
Tj[°C]
Unit
Min
Typ
Max
25
5,3
5,8
6,3
25
1,58
1,93
2,07
Inverter Switch
Static
Gate-emitter threshold voltage
V GE(th)
Collec tor-emitter saturation voltage
V CEsat
V GE=V CE
0,0052
15
150
150
2,39
V
V
Collec tor-emitter c ut-off current
I CES
0
1200
25
2
µA
Gate-emitter leakage c urrent
I GES
20
0
25
240
nA
Internal gate resistance
Input capacitance
5
rg
8600
C ies
f=1 MHz
Reverse transfer capac itance
Ω
0
25
25
pF
320
C res
Thermal
Thermal resistance junc tion to sink
R th(j-s)
phase-change
material ʎ = 3,4
W/mK
0,27
K/W
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
t d(on)
tr
R goff = 4 Ω
R gon = 4 Ω
t d(off)
±15
Fall time
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
Copyright Vincotech
Q rFWD = 15,6 µC
Q rFWD = 29,2 µC
3
600
150
25
150
25
150
25
150
25
150
25
150
25
150
213
229
35
44
326
410
68
104
12,684
18,795
8,071
12,853
ns
mWs
22 Jan. 2016 / Revision 1
30-P2126PA150SC-L280F09Y
datasheet
Characteristic Values
Parameter
Conditions
Symbol
VCE [V]
VGE [V]
VGS [V]
VGS [V]
Vr [V]
Value
IC [A]
ID [A]
IF [A]
Tj[°C]
Min
Unit
Typ
Max
25
1,91
2,05
150
1,91
Inverter Diode
Static
Forward voltage
VF
Reverse leakage c urrent
Ir
150
1200
25
26
V
µA
Thermal
Thermal resistance junc tion to sink
R th(j-s)
phase-change
material
ʎ = 3,4 W /mK
0,45
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Reverse recovered energy
Peak rate of fall of recovery current
Qr
di /dt = 4656 A/µs
±15
di /dt = 4044 A/µs
E rec
(di rf/dt )max
600
150
25
150
25
150
25
150
25
150
25
150
143
168
287
465
15,555
29,157
5,706
10,813
3267
1615
A
ns
µC
mWs
A/µs
Thermistor
Rated resistance
25
R
Deviation of R100
ΔR/R
Power dissipation
P
R100=1486 Ω
100
Power dissipation constant
22
-12
kΩ
+14
%
25
200
mW
25
2
mW/K
B-value
B(25/50)
Tol. ±3%
25
3950
K
B-value
B(25/100) Tol. ±3%
25
3998
K
Vincotech NTC Reference
Copyright Vincotech
B
4
22 Jan. 2016 / Revision 1
30-P2126PA150SC-L280F09Y
datasheet
Inverter Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
500
I C (A)
I C (A)
500
400
400
300
300
200
200
100
100
0
0
0
1
2
3
4
0
5
1
2
3
4
5
V C E (V)
V C E (V)
tp =
250
µs
V GE =
15
V
T j:
25 °C
tp =
250
150 °C
Tj =
150
V GE from
7 V to 17 V in steps of 1 V
Typical transfer characteristics
IGBT
µs
°C
Transient Thermal Impedance as function of Pulse duration
I C = f(V GE)
IGBT
Z th(j-s) = f(t p)
150
Z t h(j
h(j--s)(K/W)
I C (A)
100
120
10-1
90
60
0,5
10-2
0,2
0,1
0,05
30
0,02
0,01
0,005
0
10-3
10-5
0
0
2
4
6
8
10
12
10-4
10-3
10-2
V G E (V)
tp =
100
µs
V CE =
0
V
T j:
25 °C
D =
150 °C
R th(j-s) =
10-1
100
101
t p (s)
102
tp / T
0,27
K/W
IGBT thermal model values
Copyright Vincotech
5
R (K/W)
5,73E-02
τ (s)
1,79E+00
6,23E-02
2,33E-01
9,18E-02
6,24E-02
3,46E-02
2,03E-02
1,02E-02
2,96E-03
1,19E-02
4,61E-04
22 Jan. 2016 / Revision 1
30-P2126PA150SC-L280F09Y
datasheet
Inverter Switch Characteristics
Safe operating area
IGBT
I C = f(V CE)
I C (A)
1000
10ms
1ms
100µs
10µs
100ms
DC
100
10
1
0,1
0,01
1
10
100
1000
10000
V C E (V)
At
D =
Ts =
single pulse
80
ºC
V GE =
Tj =
±15
T jmax
V
ºC
Copyright Vincotech
6
22 Jan. 2016 / Revision 1
30-P2126PA150SC-L280F09Y
datasheet
Inverter Diode Characteristics
FWD
Typical forward characteristics
FWD
Transient thermal impedance as a function of pulse width
I F = f(V F)
Z th(j-s) = f(t p)
500
Z t h(j
h(j--s) (K/W)
IF (A)
100
400
300
10-1
200
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100
10-2
0
0
1
2
3
4
10-4
5
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
150 °C
R th(j-s) =
0,45
K/W
FWD thermal model values
R (K/W)
3,4710E-02
τ (s)
4,6050E+00
6,6830E-02
8,7990E-01
9,3970E-02
1,7000E-01
1,6240E-01
4,0270E-02
5,3480E-02
1,3400E-02
1,5680E-02
2,0050E-03
2,1540E-02
4,0000E-04
Thermistor Characteristics
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
7
22 Jan. 2016 / Revision 1
30-P2126PA150SC-L280F09Y
datasheet
Inverter Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical swit ching energy losses as a f unction of collector current
Typical swit ching energy losses as a f unct ion of gate resistor
E = f(I C)
E = f(rg)
E ( mWs)
E (mWs)
40
Eon
30
40
Eon
30
Eo n
Eo n
Eoff
20
20
Eoff
E o ff
10
10
Eo ff
0
0
0
50
100
150
200
250
300
0
I C (A)
25
With an induc tive load at
600
V
V CE =
±15
V
V GE =
R gon =
4
Ω
R goff =
4
Ω
°C
8
IC =
Figure 3.
FWD
150
12
R g ( Ω)
A
Figure 4.
FWD
E rec = f(I c)
E rec = f(r g )
16
12
E (mWs)
Typical reverse recovered energy loss as a f unct ion of gat e resist or
Erec
20
°C
150 °C
T j:
Typical reverse recovered energy loss as a f unction of collector current
E (mWs)
16
25
With an inductive load at
600
V
V CE =
±15
V
V GE =
150 °C
T j:
4
Erec
9
12
6
8
Erec
Erec
3
4
0
0
0
50
100
With an induc tive load at
600
V
V CE =
±15
V
V GE =
R gon =
4
Copyright Vincotech
150
200
25
T j:
250
I C (A)
0
300
°C
4
8
With an inductive load at
600
V
V CE =
±15
V
V GE =
150 °C
Ω
IC=
8
150
12
16
25
T j:
r g (Ω)
20
°C
150 °C
A
22 Jan. 2016 / Revision 1
30-P2126PA150SC-L280F09Y
datasheet
Inverter Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collector current
Typical swit ching t imes as a f unct ion of gate resistor
t = f(I C)
t = f(r g)
1
t ( μ s)
t ( μs)
1
td(off )
td(off )
td(on)
td(on)
tf
0,1
tf
0,1
tr
tr
0,01
0,01
0
50
100
150
200
250
300
0
(A)
I C (A)
With an induc tive load at
150
°C
Tj=
600
V
V CE =
4
8
12
16
r g (Ω)
20
With an inductive load at
150
°C
Tj=
600
V
V CE =
V GE =
±15
V
V GE =
±15
V
R gon =
4
Ω
IC =
150
A
R goff =
4
Ω
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,8
0,8
t r r (μs)
t rr (μs)
Typical reverse recovery t ime as a f unction of collector current
trr
trr
0,6
0,6
0,4
0,4
trr
trr
0,2
0,2
0
0
0
50
100
150
200
250
300
0
I C (A)
At
600
V
V GE =
±15
V
R gon =
4
Ω
V CE=
Copyright Vincotech
25
T j:
4
8
12
16
20
R g on (Ω)
°C
At
150 °C
9
600
V
V GE =
±15
V
IC=
150
A
V CE =
25
T j:
°C
150 °C
22 Jan. 2016 / Revision 1
30-P2126PA150SC-L280F09Y
datasheet
Inverter Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recoved charge as a f unct ion of IGBT t urn on gate resistor
Q r = f(I C)
Q r = f(R gon)
40
Q r (µC)
Q r (μ C)
Typical recovered charge as a f unction of collector current
Qr
30
Qr
25
30
20
20
Qr
15
Qr
10
10
5
0
At
0
0
50
100
150
200
250
300
0
4
8
12
16
20
R g o n (Ω)
I C (A)
600
V
V GE =
±15
V
R gon =
4
Ω
V CE =
At
25
T j:
°C
At
FWD
V
V GE =
±15
V
I C=
150
A
VCE=
150 °C
Figure 11.
600
25
T j:
°C
150 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unct ion of collect or current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or
I RM = f(I C)
I RM = f(R gon)
200
I R M (A)
I R M (A)
250
IRM
IRM
200
150
150
100
IRM
100
IRM
50
50
0
0
0
At
50
100
600
V
V GE =
±15
V
R gon =
4
Ω
V CE =
Copyright Vincotech
150
200
25
T j:
250
I C (A)
0
300
4
8
12
16
20
R g o n (Ω)
°C
At
150 °C
10
600
V
V GE =
±15
V
IC=
150
A
V CE =
25
T j:
°C
150 °C
22 Jan. 2016 / Revision 1
30-P2126PA150SC-L280F09Y
datasheet
Inverter Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
5000
d i /dt (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
diF / dt
dir r/dt
4000
8000
di F / dt
di r r/ dt
6000
3000
4000
2000
2000
1000
0
0
0
50
100
150
200
250
0
300
4
8
12
16
I C (A)
600
V
V GE =
±15
V
R gon =
4
Ω
V CE =
At
25
T j:
°C
At
150 °C
Figure 15.
600
V
V GE =
±15
V
I C=
150
A
V CE =
25
T j:
20
R g o n (Ω)
°C
150 °C
IGBT
Reverse bias saf e operating area
I C = f(V CE)
I C (A)
350
I C MAX
I c CHIP
300
250
MODULE
200
Ic
150
V CE MAX
100
50
0
0
200
400
600
800
1000
1200
1400
V C E (V)
At
175
°C
R gon =
4
Ω
R goff =
4
Ω
Tj =
Copyright Vincotech
11
22 Jan. 2016 / Revision 1
30-P2126PA150SC-L280F09Y
datasheet
Inverter Switching Definitions
General conditions
=
150 °C
=
4Ω
Tj
R gon
R goff
Figure 1.
=
IGBT
4Ω
Figure 2.
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
IGBT
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
125
250
tdoff
%
%
100
IC
200
VCE 90%
VGE 90%
75
150
IC
50
VCE
100
VGE
tEoff
tdon
25
50
VCE
IC 1%
VGE
V GE 10%
0
-25
-0,05
0,05
0,15
0,25
0,35
0,45
0,55
0,65
-50
2,96
0,75
3,04
VCE 3%
IC 10%
0
3,12
3,2
tEon
3,28
3,36
3,44
3,52
t (µs)
-15
V
V GE (100%) =
15
V
V C (100%) =
600
V
I C (100%) =
149
A
t doff =
t Eoff =
0,410
0,687
µs
µs
V GE (0%) =
Figure 3.
3,6
3,68
t (µs)
-15
V
V GE (100%) =
15
V
V C (100%) =
600
V
I C (100%) =
149
A
t don =
t Eon =
0,229
0,609
µs
µs
V GE (0%) =
IGBT
Figure 4.
Turn-of f Swit ching Wavef orms & def init ion of t f
IGBT
Turn-on Swit ching Wavef orms & def init ion of tr
125
250
fitted
%
100
%
200
IC
IC 90%
75
150
IC 60%
VCE
50
100
IC 90%
IC 40%
25
tr
50
VCE
IC10%
IC
0
IC 10%
0
tf
-25
0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
-50
0,8
3,1
t ( µs)
V C (100%) =
600
V
I C (100%) =
149
tf=
0,104
Copyright Vincotech
3,15
3,2
3,25
3,3
3,35
3,4
3,45
3,5
t (µs)
V C (100%) =
600
V
A
I C (100%) =
149
A
µs
tr =
0,044
µs
12
22 Jan. 2016 / Revision 1
30-P2126PA150SC-L280F09Y
datasheet
Inverter Switching Definitions
Figure 5.
IGBT
Figure 6.
Turn-of f Swit ching Wavef orms & def init ion of t Eof f
IGBT
Turn-on Swit ching Wavef orms & def init ion of tEon
125
175
%
%
IC 1%
Poff
Pon
150
100
Eoff
125
Eon
75
100
50
75
50
25
VGE 90%
25
VCE 3%
VGE 10%
0
tEoff
-25
-0,06
0,04
0,14
0,24
0,34
0
0,44
0,54
0,64
0,74
-25
2,95
0,84
tEon
3,05
3,15
3,25
3,35
P off (100%) =
89,53
kW
P on (100%) =
89,53
E off (100%) =
12,85
mJ
E on (100%) =
18,80
mJ
t Eoff =
0,69
µs
t Eon =
0,61
µs
Figure 7.
3,45
3,55
3,65
3,75
t ( µs)
t (µs)
kW
FWD
Turn-of f Swit ching Wavef orms & def init ion of t rr
150
%
Id
100
trr
50
fitted
Vd
0
IRRM 10%
-50
IRRM 90%
IRRM 100%
-100
-150
3,15
3,23
3,31
3,39
3,47
3,55
3,63
3,71
3,79
3,87
t (µs)
V d (100%) =
600
I d (100%) =
149
A
I RRM (100%) =
-168
A
t rr =
0,465
µs
Copyright Vincotech
V
13
22 Jan. 2016 / Revision 1
30-P2126PA150SC-L280F09Y
datasheet
Inverter Switching Definitions
Figure 8.
FWD
Figure 9.
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
125
150
%
%
Id
Erec
Qrr
100
100
tQrr
50
75
tErec
0
50
-50
25
-100
0
Prec
-150
2,8
3,2
3,6
4
4,4
-25
4,8
2,8
t (µs)
3,2
3,6
4
4,8
t (µs)
I d (100%) =
149
A
P rec (100%) =
89,53
Q rr (100%) =
29,16
µC
E rec (100%) =
10,81
mJ
t Qrr =
1,00
µs
t Erec =
1,00
µs
Copyright Vincotech
4,4
14
kW
22 Jan. 2016 / Revision 1
30-P2126PA150SC-L280F09Y
datasheet
Ordering Code & Marking
Version
with thermal paste 17mm housing with Press-fit pins
Ordering Code
30-P2126PA150SC-L280F09Y-/3/
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
Datamatrix
Name
Date code
UL & VIN
Lot
Serial
NN-NNNNNNNNNNNNNN-TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin table [mm]
Pin
X
Y
Function
Pin
X
Y
1
0,9
0
S11
30
68,5
0
Function
DC+3
2
0,9
3
G11
31
68,5
2,7
DC+3
3
3,9
0
DC-1
32
64,7
36
G16
4
3,9
2,7
DC-1
33
61,7
36
S16
5
3,9
5,4
DC-1
34
58,7
36
PH3
6
6,6
0
DC-1
35
56
36
PH3
7
15,2
0
DC+1
36
53,3
36
PH3
8
15,2
2,7
DC+1
37
50,6
36
PH3
9
17,9
0
DC+1
38
39,4
36
G14
10
17,9
3
DC+1
39
36,4
36
S14
11
12
13
26,2
26,2
29,2
0
2,7
0
S13
G13
40
41
33,4
30,7
36
36
PH2
PH2
DC-2
42
28
36
PH2
14
29,2
2,7
DC-2
43
25,3
36
PH2
15
29,2
5,4
DC-2
44
16
31,9
0
DC-2
45
14,1
11,1
36
36
G12
S12
17
32,2
4,05
NTC
46
8,1
36
PH1
18
40,5
0
DC+2
47
5,4
36
PH1
19
40,5
2,7
20
43,2
0
DC+2
DC+2
48
49
2,7
0
36
36
PH1
PH1
21
43,2
2,7
DC+2
22
51,5
0
S15
23
51,5
3
G15
24
54,5
0
DC-3
25
54,5
2,7
DC-3
26
54,5
5,4
DC-3
27
57,2
0
DC-3
28
65,8
0
29
65,8
2,7
DC+3
DC+3
Copyright Vincotech
15
22 Jan. 2016 / Revision 1
30-P2126PA150SC-L280F09Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T11,T12,T13
T14,T15,T16
IGBT
1200 V
150 A
Inverter Switch
D11,D12,D13
D14,D15,D16
FWD
1200 V
150 A
Inverter Diode
NTC
NTC
Copyright Vincotech
Comment
Thermistor
16
22 Jan. 2016 / Revision 1
30-P2126PA150SC-L280F09Y
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
42
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotec h.com website.
Document No.:
Date:
30-P2126PA150SC-L280F09Y-D1-14
22 Jan. 2016
Modification:
Pages
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
17
22 Jan. 2016 / Revision 1
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