Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT150N06
Power MOSFET
150 Amps, 60 Volts
N-CHANNEL POWER MOSFET
„
DESCRIPTION
The UTC UTT150N06 is an N-channel Power Trench MOSFET,
using UTC’s advanced technology to provide customers with a
minimum on-state resistance and superior switching performance.
The UTC UTT150N06 is generally applied in synchronous
Rectification or DC to DC converter.
„
FEATURES
* 150A, 60V, RDS(ON)=3.2mΩ @ VGS=10V, ID = 75A
* Low Gate Charge (Typical 102nC)
* High Switching Speed
* High Power and Current Handling Capability
* RoHS Compliant
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT150N06L-TA3-T
UTT150N06G-TA3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-220
1
G
Pin Assignment
2
3
D
S
Packing
Tube
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QW-R502-512.a
UTT150N06
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Peak Diode Recovery dv/dt (Note 3)
dv/dt
7.0
V/ns
Continuous (TC=25°C, Silicion Limited)
ID
150
A
Drain Current
600
A
Pulsed (Note 1)
IDM
Single Pulsed Avalanche Energy (Note 2)
EAS
872
mJ
TC=25°C
231
Power Dissipation
PD
W
Derate above 25°C
1.54
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
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RATINGS
62.5
0.94
UNIT
°C/W
°C/W
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UTT150N06
„
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
SYMBOL
BVDSS
ID=250µA, VGS=0V, TC=25°C
60
IGSS
UNISONIC TECHNOLOGIES CO., LTD
V
0.04
VDS=60V, VGS=0V
VDS=60V, VGS=0V , TC=150°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=75A
Forward Transconductance
gFS
VDS=10V, ID=75A (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG(tot)
VGS=10V, VDS=48V, ID=75A
Gate to Source Charge
QGS
(Note 4, 5)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=75A, RGEN=4.7Ω,
Rise Time
tR
VGS=10V
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
ISD=150A, VGS=0V
ISD=150A, VGS=0V, dIF/dt=100A/µs
Body Diode Reverse Recovery Time
tRR
(Note 4)
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.31mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature Typical Characteristics
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MIN TYP MAX UNIT
△BVDSS/△TJ Reference to 25°C, ID=250µA
IDSS
Forward
Reverse
TEST CONDITIONS
V/°C
1
µA
500
+100 nA
-100 nA
2.5
3.5
3.2
169
4.5
4.0
V
mΩ
S
6190 8235
900 1195
385 580
pF
pF
pF
102
32
32
30
40
55
24
nC
nC
nC
ns
ns
ns
ns
133
70
90
120
58
150
600
1.3
41
47
A
A
V
ns
µC
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„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Test Circuit
Gate Charge Waveforms
VGS
RL
QG
10V
VGS
QGS
QGD
DUT
VDS
1mA
Charge
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
2
EAS= 1
2 LIAS
VDS
RG
ID
L
BVDSS
IAS
10V
ID(t)
tP
DUT
VDD
VDD
VDS(t)
tP
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Time
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UTT150N06
Preliminary
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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www.unisonic.com.tw
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UTT150N06
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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