Datasheet

UNISONIC TECHNOLOGIES CO., LTD
25N06
Preliminary
Power MOSFET
25A, 60V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 25N06 is an N-channel enhancement mode power
MOSFET, which provides low gate charge, avalanche rugged
technology, and so on.
The UTC 25N06 is universally applied in DC-DC & DC-AC
converters, motor control, high current, high speed switching,
solenoid and relay drivers, regulators, audio amplifiers, automotive
environment.
„
FEATURES
* Low Gate Charge
* RDS(on) = 0.048 Ω (TYP.)
* Avalanche Rugged Technology
* 100% Avalanche Tested
* Repetitive Avalanche at 100°C
* High Current Capability
* Operating Temperature: 150°C
* Application Oriented Characterization
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
25N06L-TA3-T
25N06G-TA3-T
25N06L-TN3-T
25N06G-TN3-T
25N06L-TN3-R
25N06G-TN3-R
Note: Pin Assignment: G: Gate, D: Drain, S: Source
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-220
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
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QW-R502-450.b
25N06
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage (VGS=0)
Drain-Gate Voltage (RGS=20kΩ)
Gate-Source Voltage
Drain Current (Continuous)
SYMBOL
VDS
VDGR
VGS
TC=25°C
TC=100°C
ID
RATINGS
60
60
± 20
25
17
100
UNIT
V
V
V
A
A
A
RATINGS
62.5
100
1.57
3
UNIT
Drain Current (Pulsed) (Note 2)
IDM
Single Pulse Avalanche Energy
EAS
100
mJ
(starting TJ =25°C, ID =25A, VDD =25 V)
TO-220
90
Power Dissipation at TC=25°C
PD
W
TO-252
41
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-220
TO-252
TO-220
TO-252
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
°C/W
°C/W
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25N06
„
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current (VGS=0)
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=Max Rating
VDS= Max Rating×0.8, TC=125°C
VGS=±20V
Gate- Source Leakage Current (VDS=0)
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=12.5A
On State Drain Current
ID(on)
VDS>ID(on) ×RDS(ON)MAX, VGS=10V
Forward Transconductance (Note 1)
gFS
VDS>ID(on) ×RDS(ON)MAX, ID=12.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDD=40V, VGS=10V, ID=25A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=3A, RG=50Ω,
VGS=10V
Rise Time
tR
Turn-OFF Delay Time
tD(OFF)
VDD=40V, ID=25A, RG=50Ω,
VGS=10V
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ISD=25A, VGS=0V (Note 1)
Source-Drain Current
ISD
Source-Drain Current (Pulsed) (Note 2)
ISDM
Note: 1. Pulsed: Pulse duration = 300µs, duty cycle 1.5%.
2. Pulse width limited by safe operating area
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
60
V
1
10
±100
2
25
7
2.9
4
0.048 0.065
11
µA
nA
V
Ω
A
S
700
320
90
900
450
150
pF
pF
pF
26
8
9
30
90
80
80
40
45
130
120
120
nC
nC
nC
ns
ns
ns
ns
1.5
25
100
V
A
A
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„
Preliminary
Power MOSFET
SWITCHING TIME TEST CIRCUIT
V(BR)DSS
VD
IDM
ID
VDD
VDD
Fig. 2 Unclamped Inductive Waveforms
RL
VD
D.U.T.
RG
VGS
PW
2200µF
3.3µF
VDD
Fig. 3. Switching Times Test Circuits For Resistive Load
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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25N06
„
Preliminary
Power MOSFET
SWITCHING TIME TEST CIRCUIT (Cont.)
12V
VDD
47kΩ
1kΩ
100nF
VI=20V=VGMAX
2200µF
IG=CONST
100Ω
D.U.T.
2.7kΩ
VG
47kΩ
1kΩ
PW
Fig. 4 Gate Charge Test Circuit
3.3µF
A
MOS
D
DIODE
G
25Ω
A
A
FAST
DIODE
L=100µH
1000µF
B
S
B
D
B
D.U.T.
G
VDD
S
RG
+
85Ω
-
Fig. 5 Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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25N06
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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