Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT4232
Preliminary
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET

DESCRIPTION
The UT4232 uses UTC advanced technology to provide
excellent RDS(ON), low gate charge and to be operated with low gate
voltages. This device is suitable for applications, such as high-side
DC/DC conversion, notebook and sever.

FEATURES
* VDS(V)=30V
* ID=7A (VGS = 10V)
* RDS(ON) < 22mΩ @ VGS=10 V, ID=7 A
* RDS(ON) < 32mΩ @ VGS=4.5 V, ID=5 A

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UT4232G-S08-R
Pin Assignment: G: Gate
Package
D: Drain
SOP-8
S: Source
Pin Assignment
1
2
3
4
5
6
7
8
S1 G1 S2 G2 D2 D2 D1 D1
Packing
Tape Reel
MARKING
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UT4232

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Ta=25°C)(Note 2)
ID
7.8
A
Pulsed Drain Current (Note 3)
IDM
30
A
2
W
Power Dissipation (Ta=25°C)
PD
Derate above Ta>25°C
0.016
W/°C
Junction Temperature
TJ
+150
°C
Junction and Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface mounted on 1 in2 copper pad of FR4 board, t≤10sec; 135°C/W when mounted on min.
3. Pulse width limited by TJ(MAX)

THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
Junction to Ambient
θJA
62.5
Note: Surface mounted on 1 in2 copper pad of FR4 board, t≤10sec; 135°C/W when mounted on min

UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Breakdown
Voltage
Temperature
∆BVDSS/∆TJ
Coefficient
Drain-Source Leakage Current
IDSS
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Drain-Source On-State Resistance
RDS(ON)
TEST CONDITIONS
VGS=0 V, ID=250 µA
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TYP
V
0.02
VDS=30 V,VGS=0 V
VGS=±20 V, VDS=0 V
VD S= VGS, ID=250 µA
VGS=10 V, ID=7 A
VGS=4.5 V, ID=5 A
MAX UNIT
30
Reference to 25°C,ID=1mA
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25V, VGS=0 V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS=10V,VDS=15V, RD=15Ω,
RG=3.3Ω, ID=1 A
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
Gate Source Charge
QGS
VGS=4.5 V, VDS=24 V, ID=7 A
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1.7 A, VGS=0 V
Reverse Recovery Time
tRR
IS=7 A, VGS=0 V, dI/dt=100A/μs
Reverse Recovery Charge
QRR
UNISONIC TECHNOLOGIES CO., LTD
MIN
1
720
230
200
10
7
22
8
13
3
9
V/°C
1
±100
µA
nA
3
22
32
V
mΩ
mΩ
1150
pF
pF
pF
21
1.2
16
8
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
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UT4232
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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