UNISONIC TECHNOLOGIES CO., LTD Preliminary UT4435-H Power MOSFET -8.0A, -30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT4435-H is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed, low gate charge and a minimum on-state resistance. The UTC UT4435-H is suitable for load switching, POL, LED applications, etc. SOP-8 FEATURES *RDS(ON) < 20mΩ @ VGS=-10V, ID=-8A RDS(ON) < 32mΩ @ VGS=-4.5V, ID=-5A * High switching speed * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Note: UT4435G-S08-R Pin Assignment: S: Source Package 1 SOP-8 S G: Gate D: Drain 2 S Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R208-053.B UT4435-H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT -30 V ±20 V TC=25°C -8 A Continuous ID Drain Current TC=100°C -5.1 A -32 A Pulsed (Note 1) IDM TC=25°C 2.1 W Power Dissipation PD Derate above 25°C 0.017 W/°C Junction Temperature TJ -55 ~ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS THERMAL CHARACTERISTICS PARAMETER Max. Junction to Ambient SYMBOL θJA RATINGS 60 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Temperature Coefficient Static Drain-Source On-State Resistance ID=-250µA, VGS=0V IGSS VGS(TH) △VGS(TH) RDS(ON) UNISONIC TECHNOLOGIES CO., LTD TYP VDS=VGS, ID=-250µA VGS=-10V, ID=-8A VGS=-4.5V, ID=-5A VDS=-10V, ID=-3A MAX -30 -0.03 -1.0 UNIT V VDS=-30V, VGS=0V, TJ=25°C VDS=-24V, VGS=0V, TJ=125°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-15V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 2, 3) QG VGS=-4.5V, VDS=-15V, ID=-5A Gate to Source Charge (Note 2, 3) QGS Gate to Drain Charge (Note 2, 3) QGD Turn-ON Delay Time (Note 2, 3) tD(ON) Rise Time (Note 2, 3) tR VDD=-15V, ID=-1A, RG=6Ω, VGS=-10V Turn-OFF Delay Time (Note 2, 3) tD(OFF) Fall-Time (Note 2, 3) tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS VG=VD=0V, force current Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=-1A, VGS=0V, TJ = 25°C Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. The data tested by pulsed , pulse width≤300us, duty cycle ≤2% 3. Essentially independent of operating temperature www.unisonic.com.tw MIN △BVDSS/△TJ Reference to 25°C, ID=-1mA IDSS Forward Reverse TEST CONDITIONS V/°C -1 -10 +100 -100 µA µA nA nA -1.6 4 16.5 25.6 6.8 -2.5 V mV/°C mΩ mΩ S 1250 160 90 1820 235 130 pF pF pF 11 3.4 4.2 5.8 18.8 46.9 12.3 17 6 8 11 36 89 23 nC nC nC ns ns ns ns -8 -16 -1 A A V 20 32 2 of 5 QW-R208-053.B UT4435-H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS -VGS -VDS 90% QG -10V/-4.5V QGS QGD 10% -VGS td(ON) tR tON td(OFF) tF tOFF Resistive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Charge Gate Charge Waveforms 3 of 5 QW-R208-053.B UT4435-H Preliminary Power MOSFET TYPICAL CHARACTERISTICS Normalized RDSON vs. TJ Continuous Drain Current vs. TC 1.6 Normalized RDSON, (mΩ) Continuous Drain Current, ID (A) 8 6 4 2 75 50 100 125 Case Temperature, TC (°С) 25 1.2 1 0.8 0.6 -50 150 Normalized Transient Impedance Maximum Safe Operation Area 1 Continuous Drain Current, -ID (A) Normalized Thermal Response (RθJA) 0 50 100 150 Junction Temperature, TJ (°С) Gate to Source Voltage , -VGS (V) Normalized Gate Threshold Voltage (V) 0 1.4 0.5 0.2 0.1 0.1 PDM 0.05 0.02 t1 0.01 t2 Notes: Duty Factor: D=t1/t2 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 10us 100us 1 1ms 0.1 0.01 0.1 DC 10ms 100ms TC=25°С 1 10 100 Drain to Source Voltage, -VDS (V) 4 of 5 QW-R208-053.B UT4435-H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R208-053.B