Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UT4435-H
Power MOSFET
-8.0A, -30V P-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UT4435-H is a P-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed, low gate charge and a minimum on-state
resistance.
The UTC UT4435-H is suitable for load switching, POL, LED
applications, etc.

SOP-8
FEATURES
*RDS(ON) < 20mΩ @ VGS=-10V, ID=-8A
RDS(ON) < 32mΩ @ VGS=-4.5V, ID=-5A
* High switching speed
* Low gate charge

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UT4435G-S08-R
Pin Assignment: S: Source
Package
1
SOP-8
S
G: Gate
D: Drain
2
S
Pin Assignment
3 4 5 6
S G D D
7
D
8
D
Packing
Tape Reel
MARKING
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UT4435-H

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
-30
V
±20
V
TC=25°C
-8
A
Continuous
ID
Drain Current
TC=100°C
-5.1
A
-32
A
Pulsed (Note 1)
IDM
TC=25°C
2.1
W
Power Dissipation
PD
Derate above 25°C
0.017
W/°C
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDSS
VGSS
THERMAL CHARACTERISTICS
PARAMETER
Max. Junction to Ambient

SYMBOL
θJA
RATINGS
60
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) Temperature Coefficient
Static Drain-Source On-State Resistance
ID=-250µA, VGS=0V
IGSS
VGS(TH)
△VGS(TH)
RDS(ON)
UNISONIC TECHNOLOGIES CO., LTD
TYP
VDS=VGS, ID=-250µA
VGS=-10V, ID=-8A
VGS=-4.5V, ID=-5A
VDS=-10V, ID=-3A
MAX
-30
-0.03
-1.0
UNIT
V
VDS=-30V, VGS=0V, TJ=25°C
VDS=-24V, VGS=0V, TJ=125°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=-15V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 2, 3)
QG
VGS=-4.5V, VDS=-15V, ID=-5A
Gate to Source Charge (Note 2, 3)
QGS
Gate to Drain Charge (Note 2, 3)
QGD
Turn-ON Delay Time (Note 2, 3)
tD(ON)
Rise Time (Note 2, 3)
tR
VDD=-15V, ID=-1A, RG=6Ω,
VGS=-10V
Turn-OFF Delay Time (Note 2, 3)
tD(OFF)
Fall-Time (Note 2, 3)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
VG=VD=0V, force current
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=-1A, VGS=0V, TJ = 25°C
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. The data tested by pulsed , pulse width≤300us, duty cycle ≤2%
3. Essentially independent of operating temperature
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MIN
△BVDSS/△TJ Reference to 25°C, ID=-1mA
IDSS
Forward
Reverse
TEST CONDITIONS
V/°C
-1
-10
+100
-100
µA
µA
nA
nA
-1.6
4
16.5
25.6
6.8
-2.5
V
mV/°C
mΩ
mΩ
S
1250
160
90
1820
235
130
pF
pF
pF
11
3.4
4.2
5.8
18.8
46.9
12.3
17
6
8
11
36
89
23
nC
nC
nC
ns
ns
ns
ns
-8
-16
-1
A
A
V
20
32
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
-VGS
-VDS
90%
QG
-10V/-4.5V
QGS
QGD
10%
-VGS
td(ON)
tR
tON
td(OFF) tF
tOFF
Resistive Switching Waveforms
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Charge
Gate Charge Waveforms
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Preliminary
Power MOSFET
TYPICAL CHARACTERISTICS

Normalized RDSON vs. TJ
Continuous Drain Current vs. TC
1.6
Normalized RDSON, (mΩ)
Continuous Drain Current, ID (A)
8
6
4
2
75
50
100
125
Case Temperature, TC (°С)
25
1.2
1
0.8
0.6
-50
150
Normalized Transient Impedance
Maximum Safe Operation Area
1
Continuous Drain Current, -ID (A)
Normalized Thermal Response (RθJA)
0
50
100
150
Junction Temperature, TJ (°С)
Gate to Source Voltage , -VGS (V)
Normalized Gate Threshold Voltage (V)
0
1.4
0.5
0.2
0.1
0.1
PDM
0.05
0.02
t1
0.01
t2
Notes:
Duty Factor: D=t1/t2
Single pulse
0.01
0.0001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
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10
10us
100us
1
1ms
0.1
0.01
0.1
DC
10ms
100ms
TC=25°С
1
10
100
Drain to Source Voltage, -VDS (V)
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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