Datasheet

UNISONIC TECHNOLOGIES CO., LTD
3N80
Power MOSFET
3.0 Amps, 800Volts
N-CHANNEL POWER MOSFET

DESCRIPTION
The UTC 3N80 provide excellent RDS(ON), low gate charge and
operation with low gate voltages. This device is suitable for use as a
load switch or in PWM applications.

FEATURES
* RDS(ON) < 4.2Ω @VGS = 10 V
* Ultra Low Gate Charge ( typical 19 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 11 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N80L-TA3-T
3N80G-TA3-T
3N80L-TF3-T
3N80G-TF3-T
3N80L-TF1-T
3N80G-TF1-T
3N80L-TF2-T
3N80G-TF2-T
3N80L-TM3-T
3N80G-TM3-T
3N80L-TMS4-R
3N80G-TMS4-R
3N80L-TN3-R
3N80G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-251
TO-251S4
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
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QW-R502-283.J
3N80

Power MOSFET
MARKING
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3N80

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS=0V)
VDSS
800
V
Drain-Gate Voltage (RG=20kΩ)
VDGR
800
V
Gate-Source Voltage
VGSS
±30
V
Gate-Source Breakdown Voltage (IGS=±1mA)
BVGSO
30 (MIN)
V
Insulation Withstand Voltage (DC) TO-220F/ TO-220F1
VISO
2500
V
Avalanche Current (Note 2)
IAR
3
A
Continuous Drain Current
ID
3
A
Pulsed Drain Current
IDM
10
A
Single Pulse Avalanche Energy (Note 3)
EAS
170
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
70
TO-220F/ TO-220F1
25
Power Dissipation
PD
W
TO-220F2
TO-251/TO-251S4
50
TO-252
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX).
3. Starting TJ=25 °C, ID=IAR, VDD=50V
4. ISD≦2.5A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX).

THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
TO-220TO-220F
TO-220F1/TO-220F2
TO-251/TO-251S4
TO-252
TO-220
TO-220F/ TO-220F1
TO-220F2
TO-251/TO-251S4
TO-252
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
RATING
UNIT
62.5
θJA
°C/W
110
1.78
θJC
5
°C/W
2.5
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3N80
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
800
V
Drain-Source Leakage Current
IDSS
VDS=800V, VGS=0V
1
μA
Gate-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±10 μA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
3 3.75 4.5
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=1.5A
3.2 4.2
Ω
Forward Transconductance (Note 1)
gFS
VDS=15V, ID=1.5A
2.1
S
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
485
pF
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
COSS
57
pF
11
pF
Reverse Transfer Capacitance
CRSS
Equivalent Output Capacitance (Note 2)
COSS(EQ)
VGS=0V, VDS=0V~640V
22
pF
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
19
nC
VDD=640V, ID=3A, VGS=10V
Gate-Source Charge
QGS
3.2
nC
10.8
nC
Gate-Drain Charge
QDD
Turn-On Delay Time
tD(ON)
17
ns
Turn-On Rise Time
tR
27
ns
VDD=400V, ID=3 A,
RG=4.7Ω, VGS=10V
Turn-Off Delay Time
tD(OFF)
36
ns
Turn-Off Fall Time
tF
40
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Source-Drain Current
ISD
2.5
A
Source-Drain Current (Pulsed)
ISDM
10
A
ISD=3A, di/dt=100A/μs,
8.4
A
Reverse Recovery Current
IRRM
VDD=50V, TJ=25°C
Diode Forward Voltage(Note 1)
VSD
ISD=3A ,VGS=0V
1.6
V
Body Diode Reverse Recovery Time
trr
384
ns
Body Diode Reverse Recovery Charge
QRR
1600
nC
Note: 1. Pulse width = 300μs, Duty cycle≦1.5%
Note: 2. COSS(EQ) is defined as constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0to 80% VDSS.
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3N80
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
ISD
-
L
RG
Driver
VGS
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VDD
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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3N80

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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Power MOSFET
TYPICAL CHARACTERISTICS

Drain Current vs. Source to Drain Voltage
4
1000
Drain Current, ID (mA)
3
Drain Current,ID (A)
Drain-Source On-State Resistance Characteristics
1200
2
1
800
VGS=10V,
ID=1.25A
600
400
200
0
0
0
200
400
600
800 1000
Source to Drain Voltage,VSD (mV)
Drain Current vs. Gate Threshold Voltage
4
3
Drain Current vs. Drain-Source Breakdown Voltage
400
Drain Current,ID (µA)
250
Drain Current,ID (µA)
2
Drain to Source Voltage, VDS (V)
300
200
150
100
50
350
300
250
200
150
100
50
0
1
2
4
3
Gate Threshold Voltage,VTH (V)
0
0
200
400
600
800
1000
Drain-Source Breakdown Voltage,BVDSS(V)
Drain Current, ID (A)
0
1
0
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3N80
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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