Datasheet

UNISONIC TECHNOLOGIES CO., LTD
3NM60
Preliminary
Power MOSFET
3.0A, 600V N-CHANNEL
SUPER-JUNCTION MOSFET

DESCRIPTION
The UTC 3NM60 is a Super Junction MOSFET Structure and
is designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at
DC-DC, AC-DC converters for power applications.

FEATURES
* RDS(ON) < 1.86Ω @ VGS = 10 V, ID = 1.5 A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL


ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
3NM60L-TA3-T
3NM60G-TA3-T
3NM60L-TF1-T
3NM60G-TF1-T
3NM60L-TF2-T
3NM60G-TF2-T
3NM60L-TF3-T
3NM60G-TF3-T
3NM60L-TM3-T
3NM60G-TM3-T
3NM60L-TN3-R
3NM60G-TN3-R
Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
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QW-R205-136.b
3NM60

Preliminary
Power MOSFET
MARKING
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3NM60

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
3.0
A
Pulsed Drain Current (Note 2)
IDM
12
A
Avalanche Current (Note 2)
IAR
2.1
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
22
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
5.0
V/ns
TO-220
75
W
TO-220F/TO-220F1
34
W
Power Dissipation
PD
TO-220F2
35
W
TO-251/TO-252
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=10mH, IAS=2.1A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤3.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-251/TO-252
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATING
62.5
110
1.67
3.68
3.58
2.5
UNIT
°C/W
°C/W
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3NM60

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS=0 V, ID=250μA
VDS=600 V, VGS=0V
VGS=+30 V, VDS=0V
VGS=-30 V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=25V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
QG
VDS=50V, VGS=10V, ID=1.3A,
Gate to Source Charge
QGS
IG=100μA (Note 1, 2)
Gate to Drain Charge
QDD
Turn-ON Delay Time (Note 1)
tD(ON)
VDD=30V, VGS=10V, ID=0.5A,
Rise Time
tR
RG=25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD
IS=3.0 A, VGS=0 V
Body Diode Reverse Recovery Time (Note 1)
trr
IS=3.0 A, VGS=0 V
dIF/dt=100A/μs
Body Diode Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
600
2.5
10
+100
-100
V
μA
nA
nA
4.5
1.86
V
Ω
222
148
15
pF
pF
pF
30
3.6
6.4
38
45
90
31
nC
nC
nC
ns
ns
ns
ns
3.0
8.0
1.4
210
1.4
A
A
V
ns
μC
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3NM60
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
ISD
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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3NM60

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDD
VGS
RG
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
Switching Waveforms
QG
10V
QGS
QGD
VGS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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3NM60
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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