Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTM4953-H
Preliminary
POWER MOSFET
-5A, -30V P-CHANNEL MOSFET

DESCRIPTION
The UTC UTM4953-H is a P-Channel MOSFET, it uses UTC’s
advanced technology to provide the customers with fast switching,
etc.
The UTC UTM4953-H is suitable for high efficiency fast
switching applications, etc.
SOP-8

FEATURES
* RDS(ON) < 55mΩ @ VGS=-10V, ID=-3A
* Fast switching

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UTM4953G-S08-R
Pin Assignment: G: Gate
Package
D: Drain
SOP-8
S: Source
Pin Assignment
1
2
3
4
5
6
7
8
S1 G1 S2 G2 D2 D2 D1 D1
Packing
Tape Reel
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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
Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING (TC=25°C unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
TC=25°C
-5
A
ID
Continuous Drain Current
TC=100°C
-3.16
A
Pulsed Drain Current (Note 1)
IDM
-20
A
TC=25°C
2.1
W
Power Dissipation
PD
Derate above 25°C
0.017
W/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient

SYMBOL
θJA
RATINGS
60
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) Temperature Coefficient
Static Drain-Source On-State Resistance
SYMBOL
TEST CONDITIONS
BVDSS
ID=-250µA, VGS=0V
△BVDSS/△TJ Reference to 25°C , ID=-1mA
VDS=-30V, VGS=0V, TJ=25°C
IDSS
VDS=-24V, VGS=0V, TJ=125°C
VGS=+20V, VDS=0V
IGSS
VGS=-20V, VDS=0V
VGS(TH)
△VGS(TH)
RDS(ON)
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-30
-0.03
-1.2
VDS=VGS, ID=-250µA
VGS=-10V, ID=-3A
VGS=-4.5V, ID=-2A
VDS=-10V, ID=-3A
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=-15V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 2, 3)
QG
VDS=-15V, VGS=-4.5V, ID=-3A
Gate to Source Charge (Note 2, 3)
QGS
Gate to Drain Charge (Note 2, 3)
QGD
Turn-ON Delay Time (Note 2, 3)
tD(ON)
Rise Time (Note 2, 3)
tR
VGS=-10V, VDD=-15V, ID=-1A ,
RG=6Ω
Turn-OFF Delay Time (Note 2, 3)
tD(OFF)
Fall-Time (Note 2, 3)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
VGS=0V, IS=-1A, TJ=25°C
Continuous Source Current
IS
VG=VD=0V, Force Current
Pulsed Source Current
ISM
Notes: 1. Repetitive Rating: Pulsed width limited by maximum junction temperature
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%
3. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
MIN TYP MAX UNIT
-1.6
V
V/°C
-1
µA
-10 µA
+100 nA
-100 nA
-2.5
4
V
mV/°
C
mΩ
mΩ
S
45
65
3.5
55
85
560
55
40
810
80
60
pF
pF
pF
5.1
2
2.2
3.4
10.8
26.9
6.9
7
3
4
6
21
51
13
nC
nC
nC
ns
ns
ns
ns
-1
-5
-10
V
A
A
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
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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