Photomicrosensor (Transmissive) EE-SX1105 Be sure to read Precautions on page 25. ■ Dimensions ■ Features • Ultra-compact with a sensor width of 4.9 mm and a slot width of 2 mm. • Low-height of 3.3 mm. • PCB mounting type. • High resolution with a 0.4-mm-wide aperture. Note: All units are in millimeters unless otherwise indicated. Two, C0.7 Gate Item Optical axis Four, 0.5 Four, 0.4 ■ Absolute Maximum Ratings (Ta = 25°C) 50 mA (see note 1) Pulse forward current IFP --- Reverse voltage VR 5V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO 4.5 V Collector current IC 30 mA Collector dissipation PC 80 mW (see note 1) Ambient tem- Operating perature Storage Topr –25°C to 85°C Tstg –30°C to 85°C Soldering temperature Tsol 260°C (see note 2) Four, Detector Cross section AA Internal Circuit Terminal No. Name A Anode K Cathode C Collector E Emitter Rated value IF Two, R0.15 Two, R0.3 5 min. Symbol Forward current Emitter Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. Complete soldering within 3 seconds. Unless otherwise specified, the tolerances are ±0.2 mm. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Forward voltage Symbol Value VF 1.3 V typ., 1.6 V max. Condition IF = 50 mA Reverse current IR 10 μA max. VR = 5 V Peak emission wavelength λP 950 nm typ. IF = 50 mA Light current IL 0.2 mA min. IF = 20 mA, VCE = 5 V Dark current ID 500 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- 0.4 V max. IF = 20 mA, IL = 0.1 mA λP 800 nm typ. VCE = 5 V Rising time tr 10 μs typ. VCC = 5 V, RL = 100 Ω, IF = 20 mA Falling time tf 10 μs typ. VCC = 5 V, RL = 100 Ω, IF = 20 mA Detector Collector–Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength 58 EE-SX1105 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Dissipation Temperature Rating Forward Current vs. Forward Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Ta = 25°C VCE = 5 V Light current IL (mA) Forward current IF (mA) Forward current IF (mA) Collector dissipation Pc (mW) 2.5 2 1.5 1 0.5 Ambient temperature Ta (°C) Light Current vs. Collector−Emitter Voltage Characteristics (Typical) IF = 10 mA Dark Current vs. Ambient Temperature Characteristics (Typical) 120 100 80 60 RL = 500 Ω −20 0 20 40 60 80 100 Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response time tr, tf (μs) RL = 1K Ω VCE = 10 V 20 Collector−Emitter voltage VCE (V) Ta = 25°C VCE = 5 V VCE = 30 V VCE = 20 V 40 0 −40 Response Time vs. Light Current Characteristics (Typical) IF = 20 mA VCE = 5 V 140 Dark current ID (nA) IF = 20 mA Relative Light Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V Ta = 25°C Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Relative light current IL (%) IF = 30 mA Relative light current IL (%) Light current IL (mA) IF = 40 mA Forward current IF (mA) 160 Ta = 25°C IF = 50 mA Forward voltage VF (V) IF = 20 mA VCE = 5 V Ta = 25°C RL = 100 Ω Light current lt (mA) Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1105 Photomicrosensor (Transmissive) 59