Datasheet

Photomicrosensor (Transmissive)
EE-SX1105
Be sure to read Precautions on page 25.
■ Dimensions
■ Features
• Ultra-compact with a sensor width of 4.9 mm and a slot width of
2 mm.
• Low-height of 3.3 mm.
• PCB mounting type.
• High resolution with a 0.4-mm-wide aperture.
Note: All units are in millimeters unless otherwise indicated.
Two, C0.7
Gate
Item
Optical
axis
Four, 0.5
Four, 0.4
■ Absolute Maximum Ratings (Ta = 25°C)
50 mA
(see note 1)
Pulse forward
current
IFP
---
Reverse voltage
VR
5V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
4.5 V
Collector current
IC
30 mA
Collector
dissipation
PC
80 mW
(see note 1)
Ambient tem- Operating
perature
Storage
Topr
–25°C to 85°C
Tstg
–30°C to 85°C
Soldering temperature
Tsol
260°C
(see note 2)
Four,
Detector
Cross section AA
Internal Circuit
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Rated value
IF
Two, R0.15
Two, R0.3
5 min.
Symbol
Forward current
Emitter
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. Complete soldering within 3 seconds.
Unless otherwise specified,
the tolerances are ±0.2 mm.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Forward voltage
Symbol
Value
VF
1.3 V typ., 1.6 V max.
Condition
IF = 50 mA
Reverse current
IR
10 μA max.
VR = 5 V
Peak emission wavelength
λP
950 nm typ.
IF = 50 mA
Light current
IL
0.2 mA min.
IF = 20 mA, VCE = 5 V
Dark current
ID
500 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
0.4 V max.
IF = 20 mA, IL = 0.1 mA
λP
800 nm typ.
VCE = 5 V
Rising time
tr
10 μs typ.
VCC = 5 V, RL = 100 Ω,
IF = 20 mA
Falling time
tf
10 μs typ.
VCC = 5 V, RL = 100 Ω,
IF = 20 mA
Detector
Collector–Emitter saturated volt- VCE (sat)
age
Peak spectral sensitivity wavelength
58
EE-SX1105 Photomicrosensor (Transmissive)
■ Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Forward Current vs. Forward
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
VCE = 5 V
Light current IL (mA)
Forward current IF (mA)
Forward current IF (mA)
Collector dissipation Pc (mW)
2.5
2
1.5
1
0.5
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
IF = 10 mA
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
120
100
80
60
RL = 500 Ω
−20
0
20
40
60
80
100
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
Response time tr, tf (μs)
RL = 1K Ω
VCE = 10 V
20
Collector−Emitter voltage VCE (V)
Ta = 25°C
VCE = 5 V
VCE = 30 V
VCE = 20 V
40
0
−40
Response Time vs. Light Current
Characteristics (Typical)
IF = 20 mA
VCE = 5 V
140
Dark current ID (nA)
IF = 20 mA
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
Ta = 25°C
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
IF = 30 mA
Relative light current IL (%)
Light current IL (mA)
IF = 40 mA
Forward current IF (mA)
160
Ta = 25°C
IF = 50 mA
Forward voltage VF (V)
IF = 20 mA
VCE = 5 V
Ta = 25°C
RL = 100 Ω
Light current lt (mA)
Distance d (mm)
Distance d (mm)
Response Time Measurement Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1105 Photomicrosensor (Transmissive)
59
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