Application Note Evaluation Board 5kW TO-Leadless

Application Note AN 2013-09
V1.1 September 2013
High Power Solutions with TO-Leadless
IFAT PMM APS SE DC
Ralf Walter
Evaluation Board Application Note
High Power Solutions with TO-Leadless
Application Note AN 2013-09
V1.1 September 2013
Edition 2011-02-02
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
© Infineon Technologies Austria AG 2011.
All Rights Reserved.
Attention please!
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AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY
OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE
MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON
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(INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL
PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION
GIVEN IN THIS APPLICATION NOTE.
Information
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nearest Infineon Technologies Office (www.infineon.com).
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types in question please contact your nearest Infineon Technologies Office. Infineon Technologies
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AN 2013-09
Revision History: 13-09-02, V1.1
Previous Version: 13-05-01, V1.0
Subjects: TO-Leadless: High Power Solutions with TO-Leadless
Authors: Ralf Walter, IFAT PMM APS SE DC
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Evaluation Board Application Note
High Power Solutions with TO-Leadless
Application Note AN 2013-09
V1.1 September 2013
Table of contents
1 Introduction .................................................................................................................................................. 4
2 Board description ........................................................................................................................................ 4
2.1
Setup .................................................................................................................................................. 4
2.2
Mechanical details ............................................................................................................................. 4
2.3
PCB .................................................................................................................................................... 5
2.4
Position of assembled parts ............................................................................................................... 6
2.5
Copper ............................................................................................................................................... 7
2.6
Schematic .......................................................................................................................................... 8
2.7
Signals ............................................................................................................................................... 9
3 Bill of Material ............................................................................................................................................10
3.1
24V/36V version with 60V IPT007N06N ..........................................................................................10
3.2
48V version with 100V IPT020N10N ...............................................................................................10
4 Datasheets..................................................................................................................................................11
4.1
IPT007N06N ....................................................................................................................................11
4.2
IPT020N10N ....................................................................................................................................13
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Application Note AN 2013-09
V1.1 September 2013
Introduction
Handling high power in a drives application demands an optimized thermal management combined with
high-performance MOSFETs.
Modern silicon packaged into the new TO-Leadless allows the designer to reach a higher motor power
without the need of excessive parallelization.
Infineon offers with these demoboards a solution for applications like Light Electric Vehicles (µCars, forklifts,
E-Scooters) a power platform for first evaluations.
Depending on the overall heat sinking system the Power Boards easily can handle 5kW and more, allowing
investigations regarding switching and temperature behavior.
The TO-Leadless (P/PG-HSOF-8-1) is a molded package optimized for high power and high reliability
applications. It´s small mechanical dimensions allows compact designs and the high current capability
combined with the low thermal resistance (Rth(j-c)), resulting in lower chip temperatures, enable the designer
to go for higher power density and higher reliability.
All mechanical details shown in the following chapters and additionally a general recommendation how to
handle Infineon´s SMD devices could be found at www.infineon.com/packages.
Detailed mechanical information about the TO-Leadless (P/PG-HSOF-8-1) is available at TO-Leadless.
General information like datasheets, product brief etc. are available under www.infineon.com/toll.
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Board description
2.1
Setup
The board offers all necessary power parts to handle several kilowatts. Depending on thermal management
and electrical environment much more than 5kW of motor power are possible.
The board contains 3 halfbridges with 5 MOSFETs in parallel per switch. All power paths offer the possibility
to connect wires via bolts or screws. Three connectors, each for PLUS and MINUS have to be wired together
externally (dotted lines in Figure 2.3). A well suited electrolytic capacitor bank (Low ESR) has to be
connected as close as possible to the connectors for PLUS and MINUS.
Depending on the current measurement system additional shunt resistors could be added between the
halfbridge´s MINUS contacts and the common MINUS.
Gate resistors are included to optimize the switching speed. If necessary an additional external resistor could
be added in the gate drive circuit. Additional source resistors (1Ohm) between the power board and the
external driver circuit could avoid high currents between the sources of the halfbridges via the driver board.
R11 is not assembled but offers the possibility to add a NTC or a PTC.
2.2
Mechanical details
Board type
Bergquist Thermal Clad HT, single layer
Copper thickness
105µm/3oz.
Dimensions
102mm*139mm
Aluminum carrier thickness
2mm
Insulator thickness
76µm
Table 2.1: Details
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Evaluation Board Application Note
High Power Solutions with TO-Leadless
2.3
PCB
Figure 2.1: PCB, example with IPT020N10N
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Application Note AN 2013-09
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Evaluation Board Application Note
High Power Solutions with TO-Leadless
2.4
Position of assembled parts
Figure 2.2: Placement
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Evaluation Board Application Note
High Power Solutions with TO-Leadless
2.5
Copper
Figure 2.3: Copper tracks, 105µm/30z
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Evaluation Board Application Note
High Power Solutions with TO-Leadless
2.6
Schematic
Figure 2.4: Schematic
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Application Note AN 2013-09
V1.1 September 2013
Application Note AN 2013-09
Evaluation Board Application Note
High Power Solutions with TO-Leadless
2.7
V1.1 September 2013
Signals
Pin Number
Signal Name
Description
1
WP
2
---
NTC/PTC R11
3
W
“W”/Source High Side “W”
4
---
NTC/PTC R11
5
WN
6
---
7
W_COM
8
---
N. C.
9
VP
Gate High Side “V”
10
---
N. C.
11
V
“V”/Source High Side “V”
12
---
N. C.
13
VN
Gate High Side “V”
14
---
N. C.
15
V_COM
16
---
N. C.
17
UP
Gate High Side “U”
18
U_Com
19
U
20
UN
Gate High Side “W”
Gate Low Side “W”
N. C.
Minus “W”
Minus “V”
Minus “U”
“U”/Source High Side “U”
Gate Low Side “U”
Table 2.2: Signal names and description
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High Power Solutions with TO-Leadless
3
Bill of Material
3.1
24V/36V version with 60V IPT007N06N
Table 3.1: BOM for 24V/36V input voltage
3.2
48V version with 100V IPT020N10N
Table 3.2: BOM for 48V input voltage
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Evaluation Board Application Note
High Power Solutions with TO-Leadless
4
Datasheets
4.1
IPT007N06N
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Evaluation Board Application Note
High Power Solutions with TO-Leadless
Figure 4.1: First page of datasheet - IPT007N06N
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V1.1 September 2013
Evaluation Board Application Note
High Power Solutions with TO-Leadless
4.2
IPT020N10N
Figure 4.2: First page of datasheet – IPT020N10N
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Application Note AN 2013-09
V1.1 September 2013
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