Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UT90N03-Q
Power MOSFET
90A, 30V N-CHANNEL(D-S)
POWER MOSFET

DESCRIPTION
The UTC UT90N03-Q is an N-channel enhancement mode
Power FET, it uses UTC’s advanced technology to provide
customers a minimum on-state resistance.
The UTC UT90N03-Q is suitable for server and DC-DC
converters.

FEATURES
* RDS(ON) < 5.5 mΩ @ VGS=10V, ID=28.8A
* Improved dv/dt capability

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UT90N03L-x-TM3-T
UT90N03G-x-TM3-T
TO-251
UT90N03L-x-TN3-R
UT90N03G-x-TN3-R
TO-252
UT90N03G-x-K08-5060-R DFN-8(5×6)
Note: Pin Assignment: G: Gate
D: Drain
S: Source

1
G
G
S
2
D
D
S
Pin Assignment
3 4 5 6 7
S S S G D D D
8
D
Packing
Tube
Tape Reel
Tape Reel
MARKING
TO-251 / TO-252
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
DFN-8(5×6)
1 of 6
QW-R209-101.a
UT90N03-Q

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
30
V
±20
V
TC=25°C (Note 2, 5)
90
A
ID
Drain Current
28.8
A
TA=25°C (Note 3, 4)
90
A
Pulsed
IDM
Avalanche Current Pulse (L=0.074mH)
IAS
90
A
Single Pulsed Avalanche Energy (L=0.074mH)
EAS
300
mJ
Continuous Source-Drain Diode TC=25°C (Note 2, 5)
90
A
IS
Current
TA=25°C (Note 3, 4)
3.13
A
TC=25°C
TO-251/TO-252
187
W
(Note 2)
Power Dissipation
PD
DFN-8(5×6)
21
TA=25°C (Note 3, 4)
3.75
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Based on TC=25°C.
3. Surface Mounted on 1"x1" FR4 board.
4. t=10sec.
5. Calculated based on maximum junction temperature. Package limitation current is 90A.

SYMBOL
VDSS
VGSS
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
t≤10sec
(Note 1, 2)
SYMBOL
TO-251/TO-252
θJA
DFN-8(5×6)
TO-251/TO-252
Junction to Case
Steady State
θJC
DFN-8(5×6)
Notes: 1. Maximum under Steady State conditions is 90°C/W.
2. Surface Mounted on 1" x1" FR4 board.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
40
40.3
0.6
6
UNIT
°C/W
°C/W
2 of 6
QW-R209-101.a
UT90N03-Q

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
(Note 1)
Forward Transconductance (Note 1)
On State Drain Current (Note 1)
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
IGSS
VGS(TH)
RDS(ON)
gFS
ID(ON)
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=30V, VGS=0V
VDS=30V, VGS=0V,
TJ=55°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
30
VDS=VGS, ID=250µA
VGS=10V, ID=28.8A
VGS=4.5V, ID=27A
VDS=15V, ID=28.8A
VGS=10V, VDS≥5V
1.5
TYP
2.4
2.7
160
MAX UNIT
1
V
µA
10
µA
+100
-100
nA
nA
2.5
5.5
6.5
V
mΩ
mΩ
S
A
90
CISS
COSS
CRSS
VGS=0V, VDS=15V,
f=1.0MHz
12065
1725
970
QG
VDS=15V, VGS=10V,
ID=28.8A
171
257
nC
81.5
34
29
1.4
18
11
70
10
55
180
55
12
123
2.1
27
17
105
15
83
270
83
18
nC
nC
nC
Ω
ns
ns
ns
ns
ns
ns
ns
ns
90
A
90
A
0.8
1.2
V
52
78
ns
Total Gate Charge
QG
VDS=15V, VGS=4.5V,
Gate to Source Charge
QGS
ID=28.8A
Gate to Drain Charge
QGD
Gate Resistance
RG
f=1MHz
Turn-ON Delay Time
tD(ON)
VDD=15V, RL=0.625Ω,
Rise Time
tR
ID=24A, VGEN=10V, RG=1Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
Turn-ON Delay Time
tD(ON)
VDD=15V, RL=0.67Ω,
Rise Time
tR
ID=22.5A, VGEN=4.5V,
Turn-OFF Delay Time
tD(OFF)
RG=1Ω
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
TC=25°C
Maximum Body-Diode Pulsed Current
ISM
(Note 1)
Drain-Source Diode Forward Voltage
VSD
IS=22A
IF=20A, di/dt=100A/µs,
Body Diode Reverse Recovery Time
tRR
TJ=25°C
Notes: 1. Pulse Test: Pulse width≤300µs, Duty cycle≤2%.
2. Guaranteed by design, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
pF
pF
pF
3 of 6
QW-R209-101.a
UT90N03-Q

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
RG
90%
RD
VGS
VDS
10V
10%
DUT
VGS
td(ON)
tON
Resistive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
tR
td(OFF) tF
tOFF
Resistive Switching Waveforms
4 of 6
QW-R209-101.a
UT90N03-Q

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R209-101.a
UT90N03-Q
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 6
QW-R209-101.a
Similar pages