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Analog Power
AM4533C
N & P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
-30
rDS(on) (mΩ)
31 @ VGS = 4.5V
40 @ VGS = 2.5V
52 @ VGS = -4.5V
80 @ VGS = -2.5V
ID(A)
6.8
6.1
-5.2
-4.2
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Nch Limit Pch Limit
VDS
Drain-Source Voltage
30
-30
VGS
Gate-Source Voltage
±12
±12
TA=25°C
6.8
-5.2
ID
Continuous Drain Current a
TA=70°C
5.3
-4.1
IDM
Pulsed Drain Current b
20
-20
a
I
2.7
-2.4
Continuous Source Current (Diode Conduction)
S
T
=25°C
2.1
2.1
A
PD
Power Dissipation a
TA=70°C
1.3
1.3
TJ, Tstg
Operating Junction and Storage Temperature Range
-55 to 150
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
62.5
RθJA
110
Units
V
A
A
W
°C
Units
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM4533C_1A
Analog Power
AM4533C
Electrical Characteristics
Parameter
Gate-Source Threshold Voltage
Symbol
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-Resistance a
rDS(on)
Forward Transconductance a
gfs
Diode Forward Voltage a
VSD
Test Conditions
Static
VDS = VGS, ID = 250 uA (N-ch)
VDS = VGS, ID = -250 uA (P-ch)
VDS = 0 V, VGS = ±12 V
VDS = 24 V, VGS = 0 V
(N-ch)
VDS = -24 V, VGS = 0 V (P-ch)
VDS = 5 V, VGS = 4.5 V
(N-ch)
VDS = -5 V, VGS = -4.5V (P-ch)
VGS = 4.5 V, ID = 5.3 A
(N-ch)
VGS = 2.5 V, ID = 4.2 A (N-ch)
VGS = -4.5 V, ID = -4.2 A (P-ch)
VGS = -2.5 V, ID = -3.6 A (P-ch)
VDS = 15 V, ID = 5.3 A
(N-ch)
VDS = -15 V, ID = -4.2 A (P-ch)
IS = 1.3 A, VGS = 0 V
(N-ch)
IS = -1.2 A, VGS = 0 V
(P-ch)
Min
Typ
Max
0.4
-0.4
±100
1
-1
8
-6
Unit
V
V
nA
uA
A
A
31
40
52
80
15
12
0.71
-0.82
mΩ
mΩ
S
S
V
V
Dynamic b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
© Preliminary
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
N - Channel
VDS = 15 V, VGS = 4.5 V, ID = 5.3 A
N - Channel
VDD = 15 V, RL = 2.8 Ω, ID = 5.3 A,
VGEN = 4.5 V, RGEN = 6 Ω
N - Channel
VDS = 15 V, VGS = 0 V, f = 1 MHz
P - Channel
VDS = -15 V, VGS = 4.5 V, ID = -4.2 A
P - Channel
VDD = -15 V, RL = 3.5 Ω, ID = -4.2 A,
VGEN = -4.5 V, RGEN = 6 Ω
P - Channel
VDS = -15 V, VGS = 0 V, f = 1 MHz
2
4.9
0.8
2.4
9.1
17
38
15
449
70
56
7.7
1.7
2.3
8
6
27
10
684
75
60
nC
ns
pF
nC
ns
pF
Publication Order Number:
DS_AM4533C_1A
Analog Power
AM4533C
Typical Electrical Characteristics - N-channel
5
0.08
4
0.06
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
TJ = 25°C
2V
2.5V
0.04
3V,3.5V,4V,4.5V,6V
0.02
3
2
1
0
0
0
2
4
6
8
10
0
1
VGS - Gate-to-Source Voltage (V)
ID-Drain Current (A)
1. On-Resistance vs. Drain Current
2. Transfer Characteristics
10
0.3
TJ = 25°C
ID = 5.3A
TJ = 25°C
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
2
0.2
0.1
0
1
0.1
0.01
0
2
4
6
0
VGS - Gate-to-Source Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
10
800
F = 1MHz
6V,4.5V,4V,3.5V,3V,2.5V
700
600
Capacitance (pf)
ID - Drain Current (A)
8
6
2V
4
Ciss
500
400
300
200
2
Coss
100
0
Crss
0
0
0.1
0.2
0.3
0.4
0.5
0
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
5
6. Capacitance
3
Publication Order Number:
DS_AM4533C_1A
Analog Power
AM4533C
Typical Electrical Characteristics - N-channel
2
VDS = 15V
ID = 5.3A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
8
6
4
2
1.5
1
0.5
0
-50
0
5
10
Qg - Total Gate Charge (nC)
0
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
30
PEAK TRANSIENT POWER (W)
100
10 uS
100 uS
10
1 mS
ID Current (A)
-25
15
10 mS
100 mS
1
1 SEC
10 SEC
100 SEC
0.1
1
DC
Idm limit
25
20
15
10
5
Limited by
RDS
0
0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
RθJA(t) = r(t) + RθJA
RθJA = 110°C /W
0.1
0.05
0.02
Single Pulse
P(pk)
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
4
Publication Order Number:
DS_AM4533C_1A
Analog Power
AM4533C
Typical Electrical Characteristics - P-channel
5
0.18
TJ = 25°C
4
0.14
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
0.16
2V
0.12
0.1
2.5V
0.08
0.06
3V,3.5V,4V,4.5V,6V
0.04
3
2
1
0.02
0
0
0
1
2
3
4
ID-Drain Current (A)
0
5
1
3
VGS - Gate-to-Source Voltage (V)
1. On-Resistance vs. Drain Current
2. Transfer Characteristics
10
0.8
TJ = 25°C
ID = -4.2A
TJ = 25°C
0.6
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
2
0.4
0.2
0
1
0.1
0.01
0
2
4
6
0
VGS - Gate-to-Source Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
1200
4
F = 1MHz
6V,4.5V,4V,3.5V,3V,2.5V
2
Capacitance (pf)
ID - Drain Current (A)
1000
3
2V
Ciss
800
600
400
1
200
Coss
Crss
0
0
0
0.1
0.2
0.3
0.4
0.5
0
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
5
6. Capacitance
5
Publication Order Number:
DS_AM4533C_1A
Analog Power
AM4533C
Typical Electrical Characteristics - P-channel
8
2
ID = -4.2A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
VDS = -15V
6
4
2
1.5
1
0
0.5
0
5
10
15
-50
-25
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
100
PEAK TRANSIENT POWER (W)
30
10 uS
100 uS
10
1 mS
ID Current (A)
0
10 mS
100 mS
1
1 SEC
10 SEC
100 SEC
0.1
1
DC
Idm limit
Limited by
RDS
25
20
15
10
0
0.001
0.01
0.1
1
10
5
100
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
RθJA(t) = r(t) + RθJA
RθJA = 110°C /W
0.1
0.05
0.02
Single Pulse
P(pk)
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
6
Publication Order Number:
DS_AM4533C_1A
Analog Power
AM4533C
Package Information
Note:
1. All Dimension Are In mm.
2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall
Not Exceed 0.10 mm Per Side.
3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie
Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The
Plastic Body.
4. The Package Top May Be Smaller Than The Package Bottom.
5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In
Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius
Of The Foot.
© Preliminary
7
Publication Order Number:
DS_AM4533C_1A