Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UT8067-H
Power MOSFET
9A, 30V N-CHANNEL POWER
MOSFET

DESCRIPTION
The UTC UT8067-H is an N-Channel MOSFET, it uses UTC’s
advanced technology to provide customers with a minimum on-state
resistance, high switching speed and low gate charge, etc.
The UTC UT8067-H is suitable for high efficiency fast switching,
MB, VGA, Vcore and POL applications.

SOP-8
FEATURES
* RDS(ON) )≤18mΩ @ VGS=10V, ID=8A
RDS(ON) )≤28mΩ @ VGS=4.5V, ID=5A
* High switching speed
* Low gate charge

SYMBOL
Drain
Gate
Source

ORDERING INFORMATION
Ordering Number
Note:

UT8067G-S08-R
Pin Assignment: S: Source
Package
1
SOP-8
S
G: Gate
D: Drain
2
S
Pin Assignment
3 4 5 6
S G D D
7
D
8
D
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 6
QW-R209-034.b
UT8067-H

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
RATINGS
UNIT
30
V
±20
V
TC=25°C
9
A
Continuous
ID
Drain Current
TC=100°C
5.7
A
36
A
Pulsed (Note 1)
IDM
Single Pulse Avalanche Current (Note 2)
IAS
8
A
Single Pulse Avalanche Energy (Note 2)
EAS
32
mJ
TC=25°C
2.5
W
Power Dissipation
PD
Derate above 25°C
0.02
W/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Drain-Source Voltage
Gate-Source Voltage

SYMBOL
VDSS
VGSS
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
RATINGS
60
UNIT
°C/W
2 of 6
QW-R209-034.b
UT8067-H

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) Temperature Coefficient
Static Drain-Source On-State Resistance
(Note 3)
SYMBOL
TEST CONDITIONS
BVDSS
ID=250µA, VGS=0V
△BVDSS/△TJ Reference to 25°C, ID=1mA
VDS=30V, VGS=0V, TJ=25°C
IDSS
VDS=24V, VGS=0V, TJ=125°C
VGS=+20V, VDS=0V
IGSS
VGS=-20V, VDS=0V
VGS(TH)
△VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=8A
VGS=4.5V, ID=5A
VDS=10V, ID=5A
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
VGS=0V, VDS=0V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge (Note 3, 4)
QG
VGS=4.5V, VDS=15V, ID=8A
Gate to Source Charge (Note 3, 4)
QGS
Gate to Drain Charge (Note 3, 4)
QGD
Turn-ON Delay Time (Note 3, 4)
tD(ON)
VDD=15V, VGS=10V, ID=1A,
Rise Time (Note 3, 4)
tR
RG=6Ω
Turn-OFF Delay Time (Note 3, 4)
tD(OFF)
Fall-Time (Note 3, 4)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current
IS
VG=VD=0V , Force Current
Pulsed Source Current (Note 3)
ISM
Drain-Source Diode Forward Voltage
VSD
IS=1A, VGS=0V, TJ=25°C
(Note 3)
Notes: 1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. VDD=25V, VGS=10V, L=1mH, IAS=8A., RG=25Ω, Starting TJ=25°C.
3. The data tested by pulsed, pulse width≤300µs, duty cycle≤2%.
4. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
30
0.04
1.2
1.6
-4
16
23
4
V
V/°C
1
µA
10
µA
+100 nA
-100 nA
2
V
mV/°C
18
mΩ
28
mΩ
S
345 500
55
80
32
45
3.2 6.4
pF
pF
pF
Ω
4.1
6
1
1.4
2.1
4
2.8
5
7.2 14
15.8 30
4.6
9
nC
nC
nC
ns
ns
ns
ns
9
36
A
A
1
V
3 of 6
QW-R209-034.b
UT8067-H

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
EAS =
VDS
90%
BVDSS
1
L×IAS2×
2
BVDSS-VDD
BVDSS
VDD
IAS
10%
VGS
tR
td(ON)
tON
td(OFF) tF
tOFF
Switching Time Waveform
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
VGS
EAS Waveform
4 of 6
QW-R209-034.b
UT8067-H
Preliminary
Power MOSFET
TYPICAL CHARACTERISTICS
Gate to Source Voltage , -VGS (V)
Normalized Gate Threshold Voltage (V)
Normalized RDSON, (mΩ)
Continuous Drain Current, ID (A)

Maximum Safe Operation Area
100
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single pulse
PDM
t1
t2
Notes:
Duty Factor: D=t1/t2
0.01
0.0001 0.001 0.01
0.1
1
10
Square Wave Pulse Duration (s)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Continuous Drain Current, ID (A)
Normalized Thermal Response (RθJA)
Normalized Transient Impedance
10us
10
100us
1
1ms
10ms
0.1
0.01
0.1
DC
100ms
10
100
TC=25
1
Drain to Source Voltage, VDS (V)
5 of 6
QW-R209-034.b
UT8067-H
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 6
QW-R209-034.b
Similar pages