UNISONIC TECHNOLOGIES CO., LTD UNA06R120H Power MOSFET 8A, 60V N-CHANNEL FAST SWITCHING MOSFET DESCRIPTION The UTC UNA06R120H is an N-Channel MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC UNA06R120H is suitable for application in networking DC-DC power system and LCD/LED back light, etc. SOP-8 FEATURES * RDS(ON) < 12 mΩ @ VGS = 10V, ID=8A * Low gate charge * Excellent CdV/dt effect decline * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Note: UNA06R120HG-S08-R Pin Assignment: G: Gate D: Drain Package SOP-8 S: Source 1 S 2 S Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-088.a UNA06R120H Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous VGS @ 10V (Note 1) Drain Current RATINGS UNIT 60 V ±20 V TA=25°C 8 A ID 6.4 A TA=70°C 32 A Pulsed (Note 2) IDM Avalanche Current IAS 38 A Single Pulse Avalanche Energy (Note 3) EAS 60 mJ Power Dissipation (Note 4) TA=25°C PD 1.5 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS THERMAL RESISTANCES CHARACTERISTICS (Note 1) PARAMETER SYMBOL RATINGS Junction to Ambient θJA 85 Junction to Case θJC 24 Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2 OZ copper. 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 3. L=1.87mH, IAS=8A, VDD= 25V, VGS=10V, RG=25Ω, Starting TJ=25°C 4. ISD≤75A, di/dt≤450A/μs, VDD≤BVDSS, starting TJ=25°C. 5. The power dissipation is limited by 150°C junction temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT °C/W °C/W 2 of 6 QW-R209-088.a UNA06R120H Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS ∆BVDSS ∆TJ IDSS Forward Reverse IGSS TEST CONDITIONS ID=250µA, VGS=0V Reference to 25°C , ID=1mA VDS=48V, VGS=0V, TJ=25°C VDS=48V, VGS=0V, TJ=55°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V MIN TYP MAX UNIT 60 V 0.052 V/°C 1 5 +100 -100 µA µA nA nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=8A 8 12 mΩ (Note 2) DYNAMIC PARAMETERS Input Capacitance CISS 1070 1200 pF VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS 200 220 pF 190 210 pF Reverse Transfer Capacitance CRSS Gate Resistance RG VDS=0V, ID=8A, f=1.0MHz 1.5 3.0 Ω SWITCHING PARAMETERS (Note 2) Total Gate Charge (4.5V) QG 350 400 nC VGS=10V, VDS=48V, ID=1A, Gate to Source Charge QGS 12 18 nC IG=100μA 30 45 nC Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) 55 70 ns Rise Time tR 50 70 ns VGS=10V, VDD=30V, ID=2A, R =3.3Ω Turn-OFF Delay Time tD(OFF) 330 400 ns G Fall-Time tF 125 150 ns GUARANTEED AVALANCHE CHARACTERISTICS DIODE CHARACTERISTICS Continuous Source Current (Note 1, 6) IS 8 A VG=VD=0V , Force Current Pulsed Source Current (Note 2, 6) ISM 32 A Diode Forward Voltage (Note 2) VSD VGS=0V , IS=8A , TJ=25°C 1.2 V Reverse Recovery Time trr 18 nS IF=8A, dI/dt=100A/μs, TJ=25°C 15.6 nC Reverse Recovery Charge Qrr Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. The data tested by pulsed, pulse width≤300µs, duty cycle≤2%. 3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=30A. 4. The power dissipation is limited by 150°C junction temperature. 5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R209-088.a UNA06R120H Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-088.a UNA06R120H Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R209-088.a UNA06R120H Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-088.a