Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UNA06R120H
Power MOSFET
8A, 60V N-CHANNEL FAST
SWITCHING MOSFET

DESCRIPTION
The UTC UNA06R120H is an N-Channel MOSFET, it uses
UTC’s advanced technology to provide customers with a minimum
on-state resistance, high switching speed and low gate charge.
The UTC UNA06R120H is suitable for application in networking
DC-DC power system and LCD/LED back light, etc.

SOP-8
FEATURES
* RDS(ON) < 12 mΩ @ VGS = 10V, ID=8A
* Low gate charge
* Excellent CdV/dt effect decline
* High switching speed

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UNA06R120HG-S08-R
Pin Assignment: G: Gate
D: Drain
Package
SOP-8
S: Source
1
S
2
S
Pin Assignment
3
4
5
6
S
G
D
D
7
D
8
D
Packing
Tape Reel
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous
VGS @ 10V (Note 1)
Drain Current
RATINGS
UNIT
60
V
±20
V
TA=25°C
8
A
ID
6.4
A
TA=70°C
32
A
Pulsed (Note 2)
IDM
Avalanche Current
IAS
38
A
Single Pulse Avalanche Energy (Note 3)
EAS
60
mJ
Power Dissipation (Note 4)
TA=25°C
PD
1.5
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDSS
VGSS
THERMAL RESISTANCES CHARACTERISTICS (Note 1)
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θJA
85
Junction to Case
θJC
24
Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2 OZ copper.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. L=1.87mH, IAS=8A, VDD= 25V, VGS=10V, RG=25Ω, Starting TJ=25°C
4. ISD≤75A, di/dt≤450A/μs, VDD≤BVDSS, starting TJ=25°C.
5. The power dissipation is limited by 150°C junction temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
UNIT
°C/W
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
∆BVDSS
∆TJ
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
ID=250µA, VGS=0V
Reference to 25°C , ID=1mA
VDS=48V, VGS=0V, TJ=25°C
VDS=48V, VGS=0V, TJ=55°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
MIN
TYP
MAX UNIT
60
V
0.052
V/°C
1
5
+100
-100
µA
µA
nA
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=8A
8
12
mΩ
(Note 2)
DYNAMIC PARAMETERS
Input Capacitance
CISS
1070 1200 pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
200 220
pF
190 210
pF
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
VDS=0V, ID=8A, f=1.0MHz
1.5
3.0
Ω
SWITCHING PARAMETERS (Note 2)
Total Gate Charge (4.5V)
QG
350 400
nC
VGS=10V, VDS=48V, ID=1A,
Gate to Source Charge
QGS
12
18
nC
IG=100μA
30
45
nC
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
55
70
ns
Rise Time
tR
50
70
ns
VGS=10V, VDD=30V, ID=2A,
R
=3.3Ω
Turn-OFF Delay Time
tD(OFF)
330 400
ns
G
Fall-Time
tF
125 150
ns
GUARANTEED AVALANCHE CHARACTERISTICS
DIODE CHARACTERISTICS
Continuous Source Current (Note 1, 6)
IS
8
A
VG=VD=0V , Force Current
Pulsed Source Current (Note 2, 6)
ISM
32
A
Diode Forward Voltage (Note 2)
VSD
VGS=0V , IS=8A , TJ=25°C
1.2
V
Reverse Recovery Time
trr
18
nS
IF=8A, dI/dt=100A/μs, TJ=25°C
15.6
nC
Reverse Recovery Charge
Qrr
Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width≤300µs, duty cycle≤2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=30A.
4. The power dissipation is limited by 150°C junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power
dissipation.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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