Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF4482M
Preliminary
POWER MOSFET
6.0A, 100V N-CHANNEL
ENHANCEMENT MODE
TRENCH POWER MOSFET

DESCRIPTION
The UTC UF4482M is an N-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and low gate charge, etc.
The UTC UF4482M applies to primary side switch,
synchronous rectifier, Motor Drives, etc.

SOP-8
FEATURES
* RDS(ON) < 37 mΩ @ VGS=10V, ID=6.0A
RDS(ON) < 42 mΩ @ VGS=4.5V, ID=5.0A
* High Cell Density Trench Technology
* High Power and Current Handling Capability


SYMBOL
ORDERING INFORMATION
Ordering Number
Note:

UF4482MG-S08-R
Pin Assignment: S: Source
Package
G: Gate
SOP-8
D: Drain
1
S
2
S
Pin Assignment
3 4 5 6 7
S G D D D
8
D
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 6
QW-R209-170 .a
UF4482M

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATING (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
VDSS
100
V
VGSS
±20
V
Continuous
ID
6
A
Drain Current
Pulsed (Note 2)
IDM
42
A
Avalanche Current (Note 3)
IAR
35
A
Avalanche Energy (Note 3)
Single Pulsed (Note 3)
EAS
31
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4
V/nS
Power Dissipation
PD
3.1
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L =0.1mH, IAS =35A, VDD =50V, RG = 50Ω, Starting TJ = 25°C
4. ISD ≤ 6.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
Drain-Source Voltage
Gate-Source Voltage

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
59
1.05
UNIT
°C/W
°C/W
2 of 6
QW-R209-170 .a
UF4482M

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
IGSS
VGS(TH)
RDS(ON)
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=100V, VGS=0V,TJ=25°C
VDS=100V, VGS=0V,TJ=55°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
100
VDS=VGS, ID=250µA
VGS=10V,ID=6.0A
VGS=4.5V,ID=5.0A
1.0
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
QG
VDS=50V, VGS=10V, ID=1.3A ,
Gate to Source Charge
QGS
IG=100µA (Note 1, 2)
Gate to Drain Charge
QGD
Turn-on Delay Time (Note 1)
tD(ON)
VDD=30V, VGS=10V, ID=0.5A,
Rise Time
tR
RG=25Ω (Note 1, 2)
Turn-off Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD
IS=1.0A, VGS=0V
Reverse Recovery Time (Note 1)
trr
IS=6A, VGS=0V,
dIF/dt=100A/μs
Reverse Recovery Charge
Qrr
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
30
33
1
5
+100
-100
V
µA
µA
nA
nA
3.0
37
42
V
mΩ
mΩ
2444
130
75
pF
pF
pF
190
10
6
55
40
500
150
nC
nC
nC
ns
ns
ns
ns
6
24
1
50
55
A
A
V
nS
nC
3 of 6
QW-R209-170 .a
UF4482M

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R209-170 .a
UF4482M

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
5 of 6
QW-R209-170 .a
UF4482M
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 6
QW-R209-170 .a
Similar pages