Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UNA06R180M
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POWER MOSFET
35A, 60V N-CHANNEL
ENHANCEMENT MODE
TRENCH POWER MOSFET
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DESCRIPTION
The UTC UNA06R180M is an N-channel Power MOSFET, it
uses UTC’s advanced technology to provide the customers with
high switching speed and low on-state resistance, etc.
The UTC UNA06R180M is suitable for boost converters and
synchronous rectifiers for consumer, telecom, industrial power
supplies and LED, etc.
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1
TO-220
FEATURES
* RDS(ON) < 18mΩ @ VGS=10V, ID=30A
* High power and current handling capability
* High speed switching
* Low gate charge

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UNA06R180ML-TA3-T
UNA06R180MG-TA3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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Power MOSFET
MARKING
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ABSOLUTE MAXIMUM RATING (TA =25°С, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
60
V
±20
V
TC=25°C
35
A
Continuous TC=100°C
27
A
ID
(Note 2)
Drain Current
TA=25°C
7
A
6
A
TA=70°C
Pulsed(Note 3)
IDM
120
A
Avalanche Current
IAS
26
A
Avalanche Energy (Note4)
EAS
101
mJ
TC=25°C
100
W
TC=100°C
50
W
PD
Power Dissipation
TA=25°C
2.1
W
TA=70°C
1.3
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Current limited by bond wire.
3. Repetitive rating: Pulse width limited by maximum junction temperature.
4. L=0.3mH, IAS=26A, VDD=50V, RG=25Ω, Starting TJ = 25°C
5. ISD ≤ 26A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 175°C

SYMBOL
VDSS
VGSS
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to ambient
Junction to Case
steady state
steady state
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATINGS
60
1.5
UNIT
°C/W
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=60V, VGS=0V
VDS=60V, TJ=55°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=30A
(Note 1)
Forward Transconductance(Note 1)
gFS
VDD=5V, ID=30A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=30V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate resistance
Rg
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
Turn-on Delay Time
tD(ON)
Rise Time
tR
VDD =30V, ID =0.5A, RG=25Ω
(Note 1, 2)
Turn-off Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Integral p-n diode in MOSFET
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=1A, VGS=0V
Body Diode Reverse Recovery Time
tRR
IS=30A, dIS/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse test: pulse width ≤ 300us, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP
MAX UNIT
60
1.0
15
1
5
+100
-100
V
µA
µA
nA
nA
3.0
V
18
mΩ
50
S
1840
185
80
3
pF
pF
pF
Ω
5
27.5
10
6.5
12
5.2
38
27
0.75
35
47
nC
nC
nC
ns
ns
ns
ns
35
140
1.0
A
A
V
ns
nC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
Peak Diode Recovery dv/dt Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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