UNISONIC TECHNOLOGIES CO., LTD UNA06R180M Advance POWER MOSFET 35A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UNA06R180M is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and low on-state resistance, etc. The UTC UNA06R180M is suitable for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED, etc. 1 TO-220 FEATURES * RDS(ON) < 18mΩ @ VGS=10V, ID=30A * High power and current handling capability * High speed switching * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UNA06R180ML-TA3-T UNA06R180MG-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 1 of 7 QW-R209-103.a UNA06R180M Advance Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R209-103.a UNA06R180M Advance Power MOSFET ABSOLUTE MAXIMUM RATING (TA =25°С, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 60 V ±20 V TC=25°C 35 A Continuous TC=100°C 27 A ID (Note 2) Drain Current TA=25°C 7 A 6 A TA=70°C Pulsed(Note 3) IDM 120 A Avalanche Current IAS 26 A Avalanche Energy (Note4) EAS 101 mJ TC=25°C 100 W TC=100°C 50 W PD Power Dissipation TA=25°C 2.1 W TA=70°C 1.3 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Current limited by bond wire. 3. Repetitive rating: Pulse width limited by maximum junction temperature. 4. L=0.3mH, IAS=26A, VDD=50V, RG=25Ω, Starting TJ = 25°C 5. ISD ≤ 26A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 175°C SYMBOL VDSS VGSS THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to ambient Junction to Case steady state steady state UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 60 1.5 UNIT °C/W °C/W 3 of 7 QW-R209-103.a UNA06R180M Advance Power MOSFET ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS ID=250µA, VGS=0V VDS=60V, VGS=0V VDS=60V, TJ=55°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=30A (Note 1) Forward Transconductance(Note 1) gFS VDD=5V, ID=30A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=30V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate resistance Rg VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-on Delay Time tD(ON) Rise Time tR VDD =30V, ID =0.5A, RG=25Ω (Note 1, 2) Turn-off Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Integral p-n diode in MOSFET Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=1A, VGS=0V Body Diode Reverse Recovery Time tRR IS=30A, dIS/dt=100A/µs Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse test: pulse width ≤ 300us, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 60 1.0 15 1 5 +100 -100 V µA µA nA nA 3.0 V 18 mΩ 50 S 1840 185 80 3 pF pF pF Ω 5 27.5 10 6.5 12 5.2 38 27 0.75 35 47 nC nC nC ns ns ns ns 35 140 1.0 A A V ns nC 4 of 7 QW-R209-103.a UNA06R180M Advance Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-103.a UNA06R180M Advance Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R209-103.a UNA06R180M Advance Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-103.a