Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF4848H
Preliminary
Power MOSFET
3.5A, 150V N-CHANNEL
ENHANCEMENT MODE
TRENCH POWER MOSFET

DESCRIPTION
The UTC UF4848H is an N-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with low
voltage inverter applications.
The UTC UF4848H is suitable for high efficiency synchronous
rectification in SMPS, UPS, hard switched and high frequency
circuits.

SOP-8
FEATURES
* RDS(ON) < 85 mΩ @ VGS=10V, ID=3.5A
RDS(ON) < 95 mΩ @ VGS=6.0V, ID=3.0A
* High Cell Density Trench Technology
* High Power and Current Handling Capability

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UF4848HG-S08-R
Pin Assignment: S: Source
Package
G: Gate
SOP-8
D: Drain
1
S
2
S
Pin Assignment
3 4 5 6 7
S G D D D
8
D
Packing
Tape Reel
MARKING
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Copyright © 2016 Unisonic Technologies Co., Ltd
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UF4848H

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
VDSS
150
V
VGSS
±20
V
Continuous
ID
3.5
A
Drain Current
Pulsed (Note 2)
IDM
25
A
Avalanche Current
IAR
25
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
32
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
PD
10
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=0.1mH, IAS=2.5A, VDD=50V, RG=0 Ω, Starting TJ=25°C
4. ISD ≤ 2.5A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ=25°C
5. The data tested by surface mounted Pulse test ; Pulse width ≤ 300μs, duty cycle ≤2%.
Drain-Source Voltage
Gate-Source Voltage

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
Note: Surface Mounted on 1”×1” FR4 board.
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATING
85
12.5
UNIT
°C/W
°C/W
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
STATIC CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
SYMBOL
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
MIN
VDS=120V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
On State Drain Current (Note 1)
ID(ON)
VDS≥5V, VGS=10V
25
Static Drain-Source On-State Resistance
VGS=10V, ID=3.5A
RDS(ON)
(Note 1)
VGS=6.0V, ID=3.0A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
DYNAMIC PARAMETERS
Total Gate Charge (Note 1)
QG
VDS=50V, VGS=10V, ID=1.3A ,
Gate to Source Charge
QGS
IG=100µA (Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time (Note 1)
tD(ON)
Rise Time
tR
VDD=30V, VGS=10V, ID=0.5A,
R
Turn-OFF Delay Time
tD(OFF)
G=25Ω (Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD
IS=2.5A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
trr
IS=2.5A, VGS=0V,
dIF/dt=100A/μs
Body Diode Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP MAX UNIT
68
76
1
+100
-100
µA
nA
nA
4.0
V
A
mΩ
mΩ
85
95
1690
126
46
pF
pF
pF
105
12
4
70
40
195
75
nC
nC
nC
ns
ns
ns
ns
0.75
60
95
3.5
25
1.2
A
A
V
nS
nC
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
Peak Diode Recovery dv/dt Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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