SYNC-POWER SPN5454

SPN5454
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN5454 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. The SPN5454 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
APPLICATIONS
z Power Management in Note book
z Powered System
z DC/DC Converter
z Load Switch
FEATURES
40V/10A,RDS(ON)=18mΩ@VGS= 10V
‹
40V/ 8A,RDS(ON)= 20mΩ@VGS= 4.5V
‹
40V/ 6A,RDS(ON)= 28mΩ@VGS= 2.5V
‹
Super high density cell design for extremely low
RDS (ON)
‹
Exceptional on-resistance and maximum DC
current capability
‹
TO-252 package design
PIN CONFIGURATION
TO-252
‹
PART MARKING
2011/09/ 27 Ver.2
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SPN5454
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
G
Gate
2
S
Source
3
D
Drain
ORDERING INFORMATION
Part Number
Package
Part
SPN5454T252RGB
TO-252
※ SPN5454T252RGB : Tape Reel ; Pb – Free ; Halogen - Free
Marking
SPN5454
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
40
V
Gate –Source Voltage
VGSS
±20
V
Continuous Drain Current
TA=25℃
ID
TA=100℃
20
12
A
Pulsed Drain Current
IDM
40
A
Avalanche Current
IAS
25
A
TO-252-2L
Power Dissipation
TA=25℃
TO-251
Avalanche Energy with Single Pulse
( Tj=25℃, L = 0.14mH , IAS = 30A , VDD = 20V. )
40
PD
55
W
EAS
63
mJ
TJ
-55/150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
100
℃/W
Operating Junction Temperature
2011/09/ 27 Ver.2
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SPN5454
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.5
1.0
VDS=0V,VGS=±20V
VDS=32V,VGS=0V
VDS=32V,VGS=0V
TJ=55℃
VDS= 5V,VGS =4.5V
VGS= 10V,ID=10A
RDS(on) VGS=4.5V,ID= 8A
VGS=2.5V,ID= 6A
gfs
VDS=15V,ID=6.2A
VSD
40
IS=2.3A,VGS =0V
±100
1
10
10
V
nA
uA
A
0.012
0.014
0.020
13
0.018
0.020
0.028
0.8
1.2
10
14
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Time
Turn-Off Time
2011/09/ 27 Ver.2
VDS=20V,VGS=4.5V
ID= 5A
3.2
VDS=20V,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
nC
2.8
VDD=20V,RL=4Ω
ID≡5.0A,VGEN=10V
RG=1Ω
850
pF
110
75
6
12
10
20
20
36
6
12
Page 3
nS
SPN5454
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2011/09/ 27 Ver.2
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SPN5454
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2011/09/ 27 Ver.2
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SPN5454
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2011/09/ 27 Ver.2
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SPN5454
N-Channel Enhancement Mode MOSFET
TO-252 PACKAGE OUTLINE
2011/09/ 27 Ver.2
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SPN5454
N-Channel Enhancement Mode MOSFET
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mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support
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SYNC Power Corporation
7F-2, No.3-1, Park Street
NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
©http://www.syncpower.com
2011/09/ 27 Ver.2
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