UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT120N04 Power MOSFET 120A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120N04 is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance and high switching speed. FEATURES * RDS(ON)< 3.8mΩ @ VGS=10V, ID=60A * High switching speed * Improved dv/dt capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT120N04L-TA3-T UTT120N04G-TA3-T UTT120N04L-TQ2-T UTT120N04G-TQ2-T UTT120N04L-TQ2-R UTT120N04G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-220 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel 1 of 3 QW-R502-793.b UTT120N04 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V 120 A Continuous ID Drain Current Pulsed IDM 480 A Avalanche Energy Single Pulsed EAS 541.5 mJ Power Dissipation PD 100 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.5 1.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=32V Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=60A DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDD=30V, VGS=10V, ID=1A, Gate to Source Charge QGS IG=100µA Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=0.5A, RG=25Ω, VGS=0~10V Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=120A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 40 V 10 µA +100 nA -100 nA 1 3 3.8 2890 575 310 160 35 42 17 140 72 26 V mΩ pF pF pF 200 60 120 480 1.28 nC nC nC ns ns ns ns A A V 2 of 3 QW-R502-793.b UTT120N04 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-793.b