Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF9Z34
POWER MOSFET
-17A, -55V P-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC UF9Z34 is a P-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC UF9Z34 is suitable for all commercial-industrial
applications, etc.
„
1
TO-220
FEATURES
* RDS(ON)<0.1Ω @ VGS=-10V, ID=-10A
* High Switching Speed
* Dynamic dv/dt Rating
„
SYMBOL
D
G
S
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF9Z34L-TA3-T
UF9Z34G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
UF9Z34L-TA3-T
„
(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TA3: TO-220
(3)Lead Free
(3) L: Lead Free, G: Halogen Free
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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UF9Z34
„
POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-55
V
Gate-Source Voltage
VGSS
±20
V
VGS=-10V, TC=25°C
-17
A
Continuous
ID
Drain Current
VGS=10V, TC=100°C
-12
A
Pulsed (Note 2)
IDM
-68
A
Avalanche Current (Note 2)
IAR
-10
A
180
mJ
Single Pulse (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
5.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-6.7
V/ns
56
W
Power Dissipation (TC=25°C)
PD
Linear Derating Factor
0.37
W/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting TJ=25°C, L=3.6mH, RG=25Ω, IAS=-10A
3. ISD≤-10A, di/dt≤-290A/µs, VDD≤BVDSS, TJ≤150°C
4. Pulse width≤300µs; duty cycle≤2%
„
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
62
2.7
UNIT
°C/W
°C/W
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„
POWER MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain -Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
SYMBOL
BVDSS
TEST CONDITIONS
VGS=0V, ID=-250µA
∆BVDSS/∆TJ Reference to 25°C, ID=-1mA
IDSS
IGSS
VDS=-55V, VGS=0V
VDS=-44V, VGS=0V, TJ=150°C
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
MIN TYP MAX UNIT
-55
V
-0.05
V/°C
-25 µA
-250 µA
100 nA
-100 nA
ON CHARACTERISTICS
Static Drain-Source On-State
RDS(ON) VGS=-10V, ID=-10A (Note 2)
0.10
Resistance
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250µA
-2.0
-4.0
DYNAMIC PARAMETERS
Input Capacitance
CISS
620
VGS=0V, VDS=-25V, f=1.0MHz
Output Capacitance
COSS
280
Reverse Transfer Capacitance
CRSS
140
SWITCHING PARAMETERS
Total Gate Charge
QG
35.6 40
ID=-1.3A, VDS=-50V, VGS=-10V (Note 2)
Gate to Source Charge
QGS
5.6 7.9
Gate to Drain ("Miller") Charge
QGD
8.7 16
Turn-ON Delay Time
tD(ON)
30
Rise Time
tR
60
VDD=-30V, ID=-0.5A, RG=25Ω
RD=2.6Ω (Note 2)
Turn-OFF Delay Time
tD(OFF)
360
Fall Time
tF
115
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous
IS
-17
Source Current
Maximum Body-Diode Pulsed Current
ISM
-68
(Note 1)
Drain-Source Diode Forward Voltage
VSD
TJ=25°C, IS=-10A, VGS=0V (Note 2)
-1.3
54
82
Body Diode Reverse Recovery Time
tRR
TJ=25°C, IF=-10A, di/dt=-100A/µs
(Note 2)
Body Diode Reverse Recovery Charge
QRR
110 160
Notes: 1. Starting TJ=25°C, L=3.6mH, RG=25Ω, IAS=-10A
2. Pulse width≤300µs; duty cycle≤2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Ω
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
nC
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„
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
12V
QG
-10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
-3mA
Charge
Gate Charge Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Gate Charge Waveforms
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„
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
Drain Current vs. Gate Threshold Voltage
300
250
250
200
200
150
150
100
100
50
50
0
0
0
0
20
60
80
100
40
Drain-Source Breakdown Voltage, -BVDSS (V)
Drain-Source On-State Resistance
Characteristics
14
14
12
12
VGS=-10V, ID=-10A
10
8
6
4
2
Continuous Drain-Source
Current, -ISD (A)
Drain Current, -ID (A)
„
POWER MOSFET
0.5
1.0 1.5
2.0 2.5 3.0
Gate Threshold Voltage, -VTH (V)
Continuous Drain-Source Current vs.
Source to Drain Voltage
10
8
6
4
2
0
0
200
400
600
800 1000
Drain to Source Voltage, -VDS (mV)
0
0
0.5
1.0
1.5
2.0
2.5
Source to Drain Voltage, -VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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