Datasheet

UNISONIC TECHNOLOGIES CO., LTD
7N65-R
Power MOSFET
7.4A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 7N65-R is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in switching power supplies and
adaptors.

*
*
*
*


FEATURES
RDS(ON) = 1.2Ω @ VGS = 10V, ID = 3.7A
Fast switching capability
Avalanche energy tested
Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N65L-TA3-T
7N65G-TA3-T
7N65L-TF1-T
7N65G-TF1-T
7N65L-TF2-T
7N65G-TF2-T
7N65L-TF3-T
7N65G-TF3-T
7N65L-T2Q-T
7N65G-T2Q-T
7N65L-TQ2-R
7N65G-TQ2-R
7N65L-TQ2-T
7N65G-TQ2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
7N65L-TA3-T
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-262
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tube
(1) R: Tape Reel, T: Tube
(1) Packing Type
(2) TA3: TO-220, TF1: TO220-F1, TF3: TO-220F
(2) Package Type
(2) T2Q: TO-262, TQ2: TO-263, TF2: TO220-F2
(3) Lead Free
(3) G: Halogen Free, L: Lead Free
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Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-A11. A
7N65-R

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
7.4
A
7.4
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
29.6
A
400
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
14.2
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
142
Power Dissipation
TO-220F/TO-220F1
PD
48
W
TO-220F2
50
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 19.5mH, IAS = 6.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤7.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/TO-262/TO-263
Junction to Case
TO-220F/TO-220F1
TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATINGS
62.5
0.88
2.6
2.5
UNIT
°C/W
°C/W
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QW-R502-A11. A
7N65-R

Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
VGS = 0V, ID = 250μA
VDS = 650V, VGS = 0V
Forward
VGS = 30V, VDS = 0V
Gate- Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 3.7A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V,
Output Capacitance
COSS
f=1.0 MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD =30V, ID =0.5A,
Turn-On Rise Time
tR
RG =25Ω, VGS=0~10V
Turn-Off Delay Time
tD(OFF)
(Note 1, 2)
Turn-Off Fall Time
tF
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDD=50V, ID=1.3A,
VGS=10V, IG=100μA (Note 1,
Gate-Source Charge
QGS
2)
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 7.4 A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0V, IS = 7.4 A,
dIF / dt = 100A/μs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
650
V
1
μA
100 nA
-100 nA
0.67
V/°C
2.0
4.0
1.4
0.9
V
Ω
1290 1400
105 120
10
20
pF
pF
pF
70
70
240
70
90
90
330
110
ns
ns
ns
ns
29
7
9
38
nC
nC
nC
1.4
V
7.4
A
29.6
A
320
2.4
ns
μC
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QW-R502-A11. A
7N65-R

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-A11. A
7N65-R
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

RL
VDS
VGS
RG
VDD
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
12V
0.2µF
50kΩ
0.3µF
Switching Waveforms
Same
Type as
D.U.T.
VDS
VGS
DUT
3mA
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-A11. A
7N65-R
TYPICAL CHARACTERISTICS
On-Resistance Variation vs.
Drain Current and Gate Voltage
On State Current vs.
Allowable Case Temperature
6
10
Reverse Drain Current, IDR (A)
Drain-Source On-Resistance,
RDS(ON) (Ω)

Power MOSFET
5
VGS=20V
4
VGS=10V
3
2
1
1
Notes:
1. VGS=0V
2. 250µs Test
Note: TJ=25°C
0
0.1
0
2
4
6
8
10
12
Drain Current, ID (A)
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0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Source-Drain Voltage, VSD (V)
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QW-R502-A11. A
7N65-R
Drain-Source On-Resistance, RDS(ON)
(Normalized)
TYPICAL CHARACTERISTICS(Cont.)
Drain-Source Breakdown Voltage, BVDSS
(Normalized)

Power MOSFET
Maximum Drain Current vs. Case
Temperature
Transient Thermal Response Curve
7.5
1
6.25
D=0.5
5.0
0.2
0.1
0.1
3.75
0.05
0.02
2.5
0.01
Single Pulse
0.01
Notes:
1. θJC (t) = 1.18°C/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
10-5
10-4 10-3
10-2
10-1
100
101
Square Wave Pulse Duration, t1 (sec)
1.25
0
25
50
75
100
125
Case Temperature, TC (°C)
150
Safe Operating Area – 650V
Operation in This Area is Limited by RDS(on)
101
100µs
1ms
10ms
100
DC
Notes:
1. TJ=25°C
2. TJ=150°C
3. Single Pulse
10-1
10-2
100
101
102
650
103
Drain-Source Voltage, VDS (V)
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QW-R502-A11. A
7N65-R
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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