MCR1718 SILICON CONTROLLED RECTIFIER High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Peak Reverse Blocking Voltage (1) MCR1718-5 MCR1718-6 MCR1718-7 MCR1718-8 Value 300 400 500 600 VRRM Non-Repetitive Peak Reverse Voltage (Transient, Non-recurrent 5 ms(max) MCR1718-5 MCR1718-6 MCR1718-7 MCR1718-8 400 500 600 700 VRSM Forward Current RMS Unit Volts Volts IT(RMS) 25 Amp ITSM 1000 Amp di/dt 1000 A/µs I2t 250 A2s Dynamic Average Power (TC = 65°C) PF(AV) 30 Watts Peak Gate Power –Forward PGM 20 Watts Average Gate Power – Forward Watt Peak Forward Surge Current (1-10 µs Pulse Width) Current Application Rate (up to 1000 Adc peak) Circuit Fusing Considerations (TJ = -65 to +125°C; t ≤ 1.0 ms) PG(AV) 1.0 Peak Gate Current – Forward IGM 5.0 Amp Peak Gate Voltage VGM 10 Volts Operating Junction Temperature Range TJ -65 to +125 °C Storage Temperature Range Tstg -65 to +150 °C - 30 In.-lb Stud Torque Note 1: VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate voltage. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 2.0 °C/W Rev. 20150306 MCR1718 SILICON CONTROLLED RECTIFIER High-reliability discrete products and engineering services since 1977 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Peak Forward Blocking Voltage (TJ = 125°C) MCR1718-5 MCR1718-6 MCR1718-7 MCR1718-8 Min. Typ. Max. 300 400 500 600 - - - - 8.0 - - 8.0 - 1.1 1.3 - 0.30 5.0 - - 10 50 0.25 0.8 - 1.5 - 5.0 - 15 6.0 - - 20 - - 100 - Units (2) VDRM Peak Forward Blocking Current (Rated VDRM with gate open, TJ = 125°C) IDRM Peak Reverse Blocking Current (Rated VRRM with gate open, TJ = 125°C) IRRM Forward “on” Voltage (IF = 25 Adc) (IGT = 500 mA, Ipulse = 500 Amps) (1µs after start (10% pt.) of Ipulse) (5.0µs after start (10% pt.) of Ipulse) VTM Gate Trigger Current (Continuous dc) (Anode Voltage = 7.0 Vdc, RL = 50 Ohms) Gate Trigger Voltage (Continuous dc) (Anode Voltage = 7.0 Vdc, RL = 50 Ohms) (Anode Voltage = Rated VDRM, RL = 500 Ohms, TJ = 125°C) mA mA Volts IGT mA Volts VGT VGD Holding Current (Anode Voltage = 7.0 Vdc, Gate Open) (Anode Voltage = 7.0 Vdc, Gate Open, TJ = 125°C) IH Circuit Commutated Turn-Off Time (IF = 500 A, IR = 10A, dv/dt = 20 V/µs) (Conductive Charging Circuit – Circuit dependent) tq Critical Exponential Rate of Rise (Gate Open, TJ = 125°C) Volts mA µs dv/dt V/µs Note 2: VDRM for all types can be supplied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage. Rev. 20150306 High-reliability discrete products and engineering services since 1977 MCR1718 SILICON CONTROLLED RECTIFIER MECHANICAL CHARACTERISTICS Case TO-48 Marking Body painted, alpha-numeric Polarity Cathode is stud Rev. 20150306