Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ■ Features ● ■ Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SC5036 base voltage 2SC5036A Collector to 2SC5036 Ratings Unit 900 VCBO 900 VCES Collector to emitter voltage VCEO 800 V Emitter to base voltage VEBO 7 V Peak collector current ICP 2 A Collector current IC 1 A Base current IB 0.3 A Collector power TC=25°C dissipation Ta=25°C 30 PC Junction temperature Tj Storage temperature Tstg 2SC5036 current 2SC5036A 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Collector cutoff 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package W 2 ■ Electrical Characteristics 1 2 3 V 1000 0.7±0.1 0.75±0.1 V 1000 2.6±0.1 1.2±0.15 1.45±0.15 2.54±0.2 5.08±0.4 7° emitter voltage 2SC5036A 3.0±0.2 15.0±0.3 ● 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip ● φ3.2±0.1 +0.5 ● High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw 13.7–0.2 ● 4.6±0.2 9.9±0.3 Symbol ICBO Conditions min typ max VCB = 900V, IE = 0 50 VCB = 1000V, IE = 0 50 µA µA Emitter cutoff current IEBO VEB = 7V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 hFE1 hFE2 Collector to emitter saturation voltage VCE(sat) IC = 0.2A, IB = 0.04A 1.5 V Base to emitter saturation voltage VBE(sat) IC = 0.2A, IB = 0.04A 1.5 V Transition frequency fT VCE = 10V, IC = 0.05A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio 50 Unit 800 µA VCE = 5V, IC = 0.1A 8 V VCE = 5V, IC = 0.2A 3 IC = 0.2A, IB1 = 0.04A, IB2 = – 0.08A, VCC = 250V MHz 15 0.7 µs 2.5 µs 0.3 µs 1 Power Transistors 2SC5036, 2SC5036A PC — Ta IC — VCE (1) 30 20 (2) 10 TC=25˚C IB=400mA 1.0 350mA 300mA 250mA 200mA 150mA 0.8 0.6 100mA 80mA 60mA 0.4 40mA 20mA 0.2 (3) (4) 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 Forward current transfer ratio hFE 3 TC=–25˚C 100˚C 0.3 0.3 1 3 100 30 10 TC=–25˚C 25˚C 100˚C 3 0.1 0.3 1 3 0.1 0.03 0.01 0.01 0.03 30 10 3 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=200V TC=25˚C 100 Collector to base voltage VCB (V) 10 VCE=10V f=1MHz TC=25˚C 30 10 3 1 0.3 0.1 0.3 1 10 3 tstg 1 ton 0.3 Non repetitive pulse TC=25˚C 3 tf 0.1 1 t=10ms 0.3s 0.3 0.1 0.03 0.01 0.003 0.001 0.01 30 3 Area of safe operation (ASO) 0.03 1 1 10 30 Switching time ton,tstg,tf (µs) 100 0.3 Collector current IC (A) ton, tstg, tf — IC IE=0 f=1MHz TC=25˚C 0.1 0.1 0.001 0.003 0.01 0.03 10 100 10 0.3 Collector current IC (A) Cob — VCB 3 –25˚C 1 fT — IC 300 1 0.01 0.03 10 1000 1 25˚C 3 100 VCE=5V Collector current IC (A) 300 TC=100˚C 10 Collector current IC (A) Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 10 0.1 12 IC/IB=5 30 hFE — IC 30 0.1 0.01 0.03 10 1000 IC/IB=5 25˚C 8 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 1 6 Transition frequency fT (MHz) 0 Collector output capacitance Cob (pF) Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 2 VCE(sat) — IC 1.2 Collector current IC (A) Collector power dissipation PC (W) 40 0 0.2 0.4 0.6 Collector current IC (A) 0.8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC5036, 2SC5036A Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit 1.6 Lcoil=100µH IC/IB=5 (IB1=–IB2) TC=25˚C L coil 1.2 IB1 T.U.T IC IC 1.0 –IB2 Vin 0.8 VCC 0.6 0.4 0.2 0 0 Vclamp tW 2SC5036A 2SC5036 Collector current IC (A) 1.4 200 400 600 800 1000 1200 1400 1600 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3