Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV170
Low-leakage double diode
Product data sheet
Supersedes data of 1999 May 11
2003 Mar 25
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV170
FEATURES
DESCRIPTION
• Plastic SMD package
Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are in
common cathode configuration.
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
• Continuous reverse voltage:
max. 75 V
PINNING
PIN
DESCRIPTION
1
anode
2
anode
3
common cathode
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATION
2
handbook, 4 columns
1
• Low-leakage current applications in
surface mounted circuits.
2
1
MARKING
3
TYPE NUMBER
BAV170
MARKING
CODE(1)
3
Top view
MAM108
JX*
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
2003 Mar 25
Fig.1 Simplified outline (SOT23) and symbol.
2
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV170
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
VR
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
−
85
V
−
75
V
single diode loaded; note 1;
see Fig.2
−
215
mA
double diode loaded; note 1;
see Fig.2
−
125
mA
−
500
mA
tp = 1 µs
−
4
A
tp = 1 ms
−
1
A
tp = 1 s
−
0.5
A
−
250
mW
square wave; Tj = 25 °C prior to
surge; see Fig.4
Tamb = 25 °C; note 1
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
TYP.
MAX.
Note
1. Device mounted on a FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
UNIT
Per diode
VF
IR
forward voltage
reverse current
see Fig.3
IF = 1 mA
−
900
mV
IF = 10 mA
−
1 000
mV
IF = 50 mA
−
1100
mV
IF = 150 mA
−
1 250
mV
VR = 75 V
0.003
5
nA
VR = 75 V; Tj = 150 °C
3
80
nA
see Fig.5
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
2
−
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
0.8
3
µs
2003 Mar 25
3
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV170
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
VALUE
UNIT
360
K/W
500
K/W
note 1
Note
1. Device mounted on a FR4 printed-circuit board.
GRAPHICAL DATA
MBG521
300
MLB752 - 1
300
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
200
200
(1)
(2)
(3)
(1)
100
100
(2)
0
0
100
Tamb (oC)
0
0
200
Device mounted on a FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
Fig.2
0.8
1.2
V F (V)
1.6
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Maximum permissible continuous forward
current as a function of ambient
temperature.
2003 Mar 25
0.4
Fig.3
4
Forward current as a function of forward
voltage; per diode.
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV170
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
102
10
103
104
tp (µs)
Based on square wave currents; Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
MLB754
2
10halfpage
handbook,
IR
(nA)
10
MBG526
2
handbook, halfpage
Cd
(pF)
(1)
1
1
10 1
(2)
10 2
10 3
0
0
50
0
100
150
o
T j ( C)
5
200
10
15
VR (V)
20
VR = 75 V.
(1) Maximum values.
(2) Typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature; per diode.
2003 Mar 25
5
Diode capacitance as a function of reverse
voltage; per diode; typical values.
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV170
handbook, full pagewidth
tr
tp
t
D.U.T.
RS = 50 Ω
V = VR I F x R S
IF
10%
IF
SAMPLING
OSCILLOSCOPE
t
R i = 50 Ω
MGA881
(1)
90%
VR
input signal
Fig.7 Reverse recovery time test circuit and waveforms.
2003 Mar 25
t rr
6
output signal
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV170
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2003 Mar 25
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
7
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV170
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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http://www.nxp.com/profile/terms, including those
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Export control ⎯ This document as well as the item(s)
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
2003 Mar 25
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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© NXP B.V. 2009
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Printed in The Netherlands
613514/04/pp
Date of release: 2003 Mar 25
Document order number: 9397 750 10965
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