ESD5101 D

ESD5101, ESD5111
ESD Protection Diodes
Micro−packaged Diodes for ESD
Protection
The ESD51x1 Series is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
smartphone, smart-watch, or many other portable / wearable
applications where board space comes at a premium.
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MARKING
DIAGRAMS
Features
• Low Capacitance (5 pF Max, I/O to GND)
• Small Body Outline Dimensions
♦
•
•
Symbol
Value
Unit
Operating Junction Temperature Range
TJ
−55 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Lead Solder Temperature −
Maximum (10 Seconds)
TL
260
°C
ESD
ESD
±15
±15
kV
kV
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
ESD5111 (0201)
WLCSP2
CASE 567AV
E
ESD5111P (0201)
WLCSP2
CASE 152AX
L, E, P = Device Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
L
P
•
01005 Size: 0.435 x 0.23 mm
♦ 0201 Size: 0.6 x 0.3 mm
Protection for the Following IEC Standards:
IEC 61000−4−2 (Level 4)
Low ESD Clamping Voltage
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ESD5101 (01005)
DSN2
CASE 152AK
PIN CONFIGURATION
AND SCHEMATIC
1
2
=
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of
survivability specs.
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
ESD5101/D
ESD5101, ESD5111
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Reverse Working Voltage
Symbol
VRWM
Breakdown Voltage
VBR
Conditions
Min
Typ
I/O Pin to GND
IT = 1 mA, I/O Pin to GND
3.68
5.0
Reverse Leakage Current
IR
VRWM = 3.3 V, I/O Pin to GND
ESD5101, ESD5111
Clamping Voltage
TLP (Note 1)
VC
IPP = 8 A
IEC 61000−4−2 Level 2 equivalent
(±4 kV Contact, ±4 kV Air)
5.5
IPP = 16 A
IEC 61000−4−2 Level 2 equivalent
(±8 kV Contact, ±15 kV Air)
6.5
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz
Max
Unit
3.3
V
6.5
V
0.1
mA
V
5.5
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.
ORDERING INFORMATION
Package
Shipping†
ESD5101FCT5G
DSN2
(Pb−Free)
10,000 / Tape & Reel
ESD5111FCT5G
WLCSP2
(Pb−Free)
10,000 / Tape & Reel
WLCSP2 Side wall Isolated 0201
(Pb−Free)
10,000 / Tape & Reel
Device
ESD5111PFCT5G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
ESD5101, ESD5111
10
9
9
8
8
7
7
6
6
C (pF)
10
5
4
3
3
2
2
1
0
−3.5
1
0
−3.5
−2.5
−1.5
−0.5
0.5
1.5
2.5
3.5
−2.5
−1.5
−0.5
0.5
1.5
2.5
VBIAS (V)
VBIAS (V)
Figure 1. ESD5101 CV Characteristics
Figure 2. ESD5111 CV Characteristics
2
2
0
0
−2
−2
−4
3.5
−4
−6
−6
−8
−8
−10
−10
1.E+08
1.E+07
1.E+09
1.E+09
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 3. ESD5101 S21 Insertion Loss
Figure 4. ESD5111 S21 Insertion Loss
10
10
9
9
8
8
7
6
5
4
3
7
6
5
4
3
2
2
1
0
1
0
0.5
1.E+08
1.E+07
CAPACITANCE (pF)
CAPACITANCE (pF)
5
4
(dB)
(dB)
C (pF)
TYPICAL CHARACTERISTICS
1.0
1.5
2.0
2.5
3.0
0.5
1.0
1.5
2.0
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 5. ESD5101 Capacitance over
Frequency
Figure 6. ESD5111 Capacitance over
Frequency
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3
3.0
ESD5101, ESD5111
TYPICAL CHARACTERISTICS
20
20
10
18
16
12
TLP CURRENT (A)
VIEC, EQUIVALENT (kV)
14
6
10
8
4
6
12
8
4
2
0
0
2
0
4
6
8
10
12
14
16
18
4
6
2
2
6
10
4
0
8
14
2
0
0
20
2
4
6
VC, VOLTAGE (V)
8
10
12
14
16
18
20
VC, VOLTAGE (V)
Figure 7. ESD5101 Positive TLP I−V Curve
Figure 8. ESD5111 Positive TLP I−V Curve
−20
10
−20
10
−18
−18
−12
6
−10
−8
4
−6
−4
−2
0
0
2
4
6
8
10
12
14
16
18
TLP CURRENT (A)
−14
−16
−14
−12
6
−10
−8
4
−6
2
−4
0
−2
0
20
8
VIEC, EQUIVALENT (kV)
8
VIEC, EQUIVALENT (kV)
−16
TLP CURRENT (A)
VIEC, EQUIVALENT (kV)
8
16
TLP CURRENT (A)
10
18
2
0
VC, VOLTAGE (V)
2
4
6
8
10
12
14
16
18
0
20
VC, VOLTAGE (V)
Figure 9. ESD5101 Negative TLP I−V Curve
Figure 10. ESD5111 Negative TLP I−V Curve
Figure 11. ESD5111 Positive 8 kV ESD Contact
Discharge
Figure 12. ESD5111 Negative 8 kV ESD
Contact Discharge
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4
ESD5101, ESD5111
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
Ipeak
Level
Test Voltage (kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1
2
7.5
4
2
2
4
15
8
4
3
6
22.5
12
6
4
8
30
16
8
100%
90%
I @ 30 ns
I @ 60 ns
10%
tP = 0.7 ns to 1 ns
Figure 13. IEC61000−4−2 Spec
Transmission Line Pulse (TLP) Measurement
L
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 14. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 15 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.
50 W Coax
Cable
S Attenuator
÷
50 W Coax
Cable
10 MW
IM
VM
DUT
VC
Oscilloscope
Figure 14. Simplified Schematic of a Typical TLP
System
Figure 15. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
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5
ESD5101, ESD5111
PACKAGE DIMENSIONS − ESD5111 (0201)
WLCSP2, 0.6x0.3
CASE 567AV
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A B
D
0.02 C
2X
2X
DIM
A
A1
b
D
E
e
L
E
0.02 C
TOP VIEW
0.02 C
A
0.02 C
A1
C
SIDE VIEW
MILLIMETERS
MIN
NOM MAX
0.250 0.275 0.300
0.000 0.250 0.500
0.140 0.155 0.170
0.570 0.600 0.630
0.270 0.300 0.330
0.36 BSC
0.190 0.215 0.240
RECOMMENDED
SOLDER FOOTPRINT*
SEATING
PLANE
2X
0.33
e
2X
L
2X b
0.05 C A B
2X
0.28
0.81
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
PACKAGE DIMENSIONS − ESD5101 (01005)
DSN2, 0.435x0.23, 0.27P, (01005)
CASE 152AK
ISSUE A
D
PIN 1
INDICATOR
0.02 C
2X
2X
ÉÉ
ÉÉ
ÉÉ
0.02 C
MILLIMETERS
DIM MIN
MAX
A 0.165 0.195
A1
−−− 0.030
b 0.177 0.193
D
0.435 BSC
E
0.230 BSC
e
0.270 BSC
L 0.112 0.128
E
TOP VIEW
A
0.05 C
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A
B
A1
0.02 C
2X
C
SIDE VIEW
RECOMMENDED
SOLDER FOOTPRINT*
SEATING
PLANE
0.44
e
2X
0.05
b
M
2X
C A B
0.23
1
1
L
C A B
2X
0.05
M
0.16
DIMENSIONS: MILLIMETERS
2X
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
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6
ESD5101, ESD5111
PACKAGE DIMENSIONS − ESD5111P (0201)
DSN2, 0.60x0.30, 0.36P
CASE 152AX
ISSUE O
D
PIN 1
INDICATOR
0.025 C
2X
2X
0.025 C
ÈÈ
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A
B
DIM
A
A1
b
D
E
e
L
E
TOP VIEW
A
0.02 C
MILLIMETERS
MIN
MAX
0.175 0.225
−−− 0.018
0.205 0.225
0.575 0.625
0.275 0.325
0.36 BSC
0.145 0.165
A1
RECOMMENDED
SOLDER FOOTPRINT*
0.01 C
C
SIDE VIEW
SEATING
PLANE
0.65
2X
0.27
e
1
b
2X
1
0.05
L2
C A B
2X
0.05
M
BOTTOM VIEW
M
0.26
DIMENSIONS: MILLIMETERS
C A B
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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ESD5101/D
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