2N4921 D

2N4921G, 2N4922G,
2N4923G
Medium-Power Plastic
NPN Silicon Transistors
These high−performance plastic devices are designed for driver
circuits, switching, and amplifier applications.
Features
•
•
•
•
•
Low Saturation Voltage
Excellent Power Dissipation Due to Thermopadt Construction
Excellent Safe Operating Area
Complement to PNP 2N4920G
These Devices are Pb−Free and are RoHS Compliant**
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1.0 AMPERE
GENERAL PURPOSE
POWER TRANSISTORS
40−80 VOLTS, 30 WATTS
COLLECTOR
2, 4
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N4921G
2N4922G
2N4923G
VCEO
Collector−Emitter Voltage
2N4921G
2N4922G
2N4923G
VCB
Emitter Base Voltage
VEB
5.0
Vdc
IC
1.0
Adc
ICM
3.0
Adc
Base Current − Continuous
IB
1.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
30
0.24
W
mW/_C
–65 to +150
_C
40
60
80
1
EMITTER
Vdc
40
60
80
Collector Current − Continuous (Note 1)
Collector Current − Peak (Note 1)
Operating and Storage Junction
Temperature Range
TJ, Tstg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The 1.0 A maximum IC value is based upon JEDEC current gain requirements.
The 3.0 A maximum value is based upon actual current handling capability of
the device (see Figures 5 and 6).
THERMAL CHARACTERISTICS (Note 2)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
4.16
_C/W
2. Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
** For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 14
3
BASE
Vdc
1
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
YWW
2
N492xG
Y
= Year
WW
= Work Week
2N492x = Device Code
x = 1, 2, or 3
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
2N4921G
TO−225
(Pb−Free)
500 Units / Box
2N4922G
TO−225
(Pb−Free)
500 Units / Box
2N4923G
TO−225
(Pb−Free)
500 Units / Box
Publication Order Number:
2N4921/D
2N4921G, 2N4922G, 2N4923G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 0.1 Adc, IB = 0)
2N4921G
2N4922G
2N4923G
Vdc
40
60
80
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
2N4921G
(VCE = 30 Vdc, IB = 0)
2N4922G
(VCE = 40 Vdc, IB = 0)
2N4923G
ICEO
Collector Cutoff Current
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_C
ICEX
Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
−
−
−
mAdc
−
0.5
−
0.5
−
0.5
−
−
0.1
0.5
−
0.1
−
1.0
40
30
10
−
150
−
−
0.6
−
1.3
−
1.3
3.0
−
−
100
25
−
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
Collector−Emitter Saturation Voltage (Note 3)
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
Base−Emitter Saturation Voltage (Note 3)
(IC = 1.0 Adc, IB = 0.1 Adc)
VBE(sat)
Base−Emitter On Voltage (Note 3)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
−
Vdc
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
fT
Current−Gain − Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
Small−Signal Current Gain
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
MHz
pF
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: PW ≈ 300 ms, Duty Cycle ≈ 2.0%.
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2
2N4921G, 2N4922G, 2N4923G
PD, POWER DISSIPATION (WATTS)
40
30
20
10
0
25
50
75
100
TC, CASE TEMPERATURE (°C)
125
150
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
APPROX
+11 V
TURN-ON PULSE
t1
VCC
RC
Vin
Vin
VBE(off)
RB
Cjd<<Ceb
t3
APPROX
+11 V
-4.0 V
SCOPE
t1 ≤ 15 ns
100 < t2 ≤ 500 ms
t3 ≤ 15 ns
Vin
APPROX 9.0 V
t2
TURN-OFF PULSE
DUTY CYCLE ≈ 2.0%
RB and RC varied to
obtain desired
current levels
Figure 2. Switching Time Equivalent Circuit
5.0
VCC = 30 V
IC/IB = 20
3.0
IC/IB = 10, UNLESS NOTED
TJ = 25°C
TJ = 150°C
VCC = 60 V
t, TIME (s)
μ
2.0
1.0
0.7
0.5
tr
VCC = 30 V
0.3
0.2
0.1
0.07
0.05
td
VCC = 60 V
VBE(off) = 2.0 V
VCC = 30 V
VBE(off) = 0
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 3. Turn−On Time
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3
500 700 1000
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
2N4921G, 2N4922G, 2N4923G
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.07
0.05
0.03
P(pk)
qJC(t) = r(t) qJC
qJC = 4.16°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) qJC(t)
DUTY CYCLE, D = t1/t2
0.1
0.05
0.01
SINGLE PULSE
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20
30
50
100
200 300
500
1000
IC, COLLECTOR CURRENT (AMP)
Figure 4. Thermal Response
10
7.0
5.0
5.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) ≤ 150_C. At high case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown.
100 ms
1.0 ms
3.0
2.0
TJ = 150°C
1.0
0.7
0.5
dc
SECOND BREAKDOWN
LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
PULSE CURVES APPLY BELOW
RATED VCEO
0.3
0.2
0.1
1.0
2.0 3.0
5.0 7.0 10
20 30
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70
100
Figure 5. Active−Region Safe Operating Area
5.0
5.0
3.0
3.0
IC/IB = 20
t f , FALL TIME (s)
μ
t s′, STORAGE TIME (s)
μ
1.0
0.7
0.5
IC/IB = 10
0.3
0.2
0.1
0.07
0.05
IC/IB = 20
2.0
2.0
IC/IB = 20
TJ = 25°C
TJ = 150°C
IB1 = IB2
ts′ = ts - 1/8 tf
10
20
30
200 300
50 70 100
IC, COLLECTOR CURRENT (mA)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
500 700 1000
IC/IB = 10
TJ = 25°C
TJ = 150°C
VCC = 30 V
IB1 = IB2
10
Figure 6. Storage Time
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 7. Fall Time
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4
500 700 1000
hFE, DC CURRENT GAIN
1000
700
500
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2N4921G, 2N4922G, 2N4923G
VCE = 1.0 V
300
200
TJ = 150°C
100
70
50
25°C
-55°C
30
20
10
2.0 3.0 5.0
10
20 30 50 100 200 300 500
IC, COLLECTOR CURRENT (mA)
1000 2000
1.0
0.8
108
1.0 A
TJ = 25°C
0.4
0.2
0
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10 20 30
IB, BASE CURRENT (mA)
50
100
200
1.5
IC = 10 x ICES
VCE = 30 V
TJ = 25°C
107
1.2
IC = 2 x ICES
VOLTAGE (VOLTS)
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
0.5 A
Figure 9. Collector Saturation Region
106
IC ≈ ICES
105
ICES VALUES
OBTAINED FROM
FIGURE 12
104
30
0
0.9
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.3
60
90
120
VCE(sat) @ IC/IB = 10
0
10
20 30 50
2.0 3.0 5.0
150
100 200 300 500
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (mA)
Figure 10. Effects of Base−Emitter Resistance
Figure 11. “On” Voltage
104
TJ = 150°C
103
100°C
102
25°C
101
IC = ICES
100
VCE = 30 V
10-1
10-2
-0.2
1000 2000
+2.5
REVERSE
-0.1
FORWARD
0
+0.1
+0.2
+0.3
+0.4
TEMPERATURE COEFFICIENTS (mV/ °C)
IC, COLLECTOR CURRENT (A)
μ
0.25 A
0.6
Figure 8. Current Gain
103
IC = 0.1 A
+2.0
*APPLIES FOR IC/IB ≤
+1.5
+1.0
TJ = 100°C to 150°C
+0.5
*qVC FOR VCE(sat)
0
-55°C to +100°C
-0.5
-1.0
-1.5
qVB FOR VBE
-2.0
-2.5
2.0 3.0 5.0
+0.5
[email protected] + 1.0V
2
VBE, BASE-EMITTER VOLTAGE (VOLTS)
10
20 30
50
100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 12. Collector Cut−Off Region
Figure 13. Temperature Coefficients
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5
1000 2000
2N4921G, 2N4922G, 2N4923G
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AC
4
3 2
1
1 2
3
FRONT VIEW
BACK VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
E
A1
Q
A
PIN 4
BACKSIDE TAB
D
P
1
2
3
L1
L
2X
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
b2
2X
e
b
FRONT VIEW
c
SIDE VIEW
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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2N4921/D
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