ETC 2N4918/D

ON Semiconductor
2N4918
thru
2N4920 *
Medium-Power Plastic PNP
Silicon Transistors
. . . designed for driver circuits, switching, and amplifier
applications. These high–performance plastic devices feature:
*ON Semiconductor Preferred Device
3 AMPERE
GENERAL–PURPOSE
POWER TRANSISTORS
40–80 VOLTS
30 WATTS
• Low Saturation Voltage —
•
•
•
•
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
Excellent Power Dissipation Due to Thermopad Construction —
PD = 30 W @ TC = 25C
Excellent Safe Operating Area
Gain Specified to IC = 1.0 Amp
Complement to NPN 2N4921, 2N4922, 2N4923
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*MAXIMUM RATINGS
Ratings
Symbol
2N4918
2N4919
2N4920
Unit
VCEO
40
60
80
Vdc
Collector–Base Voltage
VCB
40
60
80
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous (1)
IC*
1.0
3.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25C
PD
30
0.24
Watts
W/C
TJ, Tstg
–65 to +150
C
Collector–Emitter Voltage
Operating & Storage Junction
Temperature Range
CASE 77–09
TO–225AA TYPE
THERMAL CHARACTERISTICS (2)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
θJC
4.16
C/W
*Indicates JEDEC Registered Data for 2N4918 Series.
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current–handling capability of the
device (See Figure 5).
(2) Recommend use of thermal compound for lowest thermal resistance.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 9
1
Publication Order Number:
2N4918/D
2N4918 thru 2N4920
PD, POWER DISSIPATION (WATTS)
40
30
20
10
0
25
50
75
100
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
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2
125
150
2N4918 thru 2N4920
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
40
60
80
—
—
—
—
—
—
0.5
0.5
0.5
—
—
0.1
0.5
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 0.1 Adc, IB = 0)
VCEO(sus)
2N4918
2N4919
2N4920
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
Vdc
ICEO
2N4918
2N4919
2N4920
mAdc
Collector Cutoff Current
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc)
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 125C)
ICEX
mAdc
Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
—
0.1
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
—
1.0
mAdc
40
30
10
—
150
—
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
—
Collector–Emitter Saturation Voltage (1)
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
—
0.6
Vdc
Base–Emitter Saturation Voltage (1)
(IC = 1.0 Adc, IB = 0.1 Adc)
VBE(sat)
—
1.3
Vdc
Base–Emitter On Voltage (1)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
—
1.3
Vdc
fT
3.0
—
MHz
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
—
100
pF
Small–Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
25
—
—
*Indicates JEDEC Registered Data.
(1) Pulse Test: PW 300 µs, Duty Cycle 2.0%
VBE(off)
APPROX
-11 V
VCC
Vin
t1
2.0
t2
Vin
APPROX
-11 V
0
RB
t3
TURN-OFF PULSE
t1 < 15 ns
100 < t2 < 500 µs
t3 < 15 ns
IC/IB = 10, UNLESS NOTED
TJ = 25°C
TJ = 150°C
SCOPE
Cjd<<Ceb
APPROX 9.0 V
VCC = 30 V
IC/IB = 20
3.0
RC
t, TIME (s)
µ
Vin
5.0
0
+4.0 V
RB and RC
varied to
obtain desired
current levels
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
DUTY CYCLE ≈ 2.0%
VCC = 30 V
tr
td
VCC = 60 V
VBE(off) = 2.0 V
VCC = 30 V
VBE(off) = 0
10
Figure 2. Switching Time Equivalent Test Circuit
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 3. Turn–On Time
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3
VCC = 60 V
500 700 1000
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
2N4918 thru 2N4920
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P(pk)
θJC(t) = r(t) θJC
θJC = 4.16°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) θJC(t)
DUTY CYCLE, D = t1/t2
0.05
0.1
0.07
0.05
0.01
0.03
SINGLE PULSE
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20
30
50
100
200 300
500
1000
Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMP)
10
TJ = 150°C
2.0
100 µs
1.0 ms
5.0 ms
5.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
dc
1.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMIT @ TC = 25°C
0.5
PULSE CURVES APPLY BELOW
RATED VCEO
0.2
0.1
1.0
2.0 3.0
5.0 7.0 10
20 30
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70 100
Figure 5. Active–Region Safe Operating Area
5.0
5.0
IC/IB = 20
IC/IB = 20
2.0
1.0
IC/IB = 10
0.7
0.5
0.3
0.2
0.1
0.07
0.05
3.0
t f , FALL TIME (s)
µ
t s′, STORAGE TIME (s)
µ
3.0
2.0
ts′ = ts - 1/8 tf
TJ = 25°C
TJ = 150°C
IB1 = IB2
10
20
30
200 300
50 70 100
IC, COLLECTOR CURRENT (mA)
1.0
0.7
0.5
500 700 1000
IC/IB = 10
0.3
0.2
0.1
0.07
0.05
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 7. Fall Time
Figure 6. Storage Time
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4
TJ = 25°C
TJ = 150°C
VCC = 30 V
IB1 = IB2
500 700 1000
2N4918 thru 2N4920
hFE, DC CURRENT GAIN
1000
700
500
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL DC CHARACTERISTICS
VCE = 1.0 V
TJ = 150°C
300
200
25°C
100
70
50
-55°C
30
20
10
2.0 3.0 5.0
10
20 30 50 100 200 300 500
IC, COLLECTOR CURRENT (mA)
1000 2000
1.0
IC = 0.1 A
0.8
108
TJ = 25°C
0.4
0.2
0
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10 20 30
IB, BASE CURRENT (mA)
100
50
200
1.5
VCE = 30 V
IC = 10 ICES
107
1.2
106
VOLTAGE (VOLTS)
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
1.0 A
Figure 9. Collector Saturation Region
IC ≈ ICES
105
IC = 2x ICES
ICES VALUES
OBTAINED FROM
FIGURE 13
104
0
30
60
TJ = 25°C
0.9
0.6
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.3
VCE(sat) @ IC/IB = 10
90
120
0
2.0 3.0 5.0
150
10
20 30
50
100
200 300 500 1000 2000
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (mA)
Figure 10. Effects of Base–Emitter Resistance
Figure 11. “On” Voltage
102
+2.5
TEMPERATURE COEFFICIENTS (mV/ °C)
IC, COLLECTOR CURRENT (A)
µ
0.5 A
0.6
Figure 8. Current Gain
103
0.25 A
101
TJ = 150°C
100
10-1
100°C
10-2
IC = ICES
104
REVERSE
103
-0.2
-0.1
25°C
FORWARD
0
+0.1
+0.2
VCE = 30 V
+0.3
+0.4
+2.0
*APPLIES FOR IC/IB <
+1.5
+1.0
TJ = 100°C to 150°C
+0.5
*θVC FOR VCE(sat)
0
TJ = -55°C to +100°C
-0.5
-1.0
-1.5
θVB FOR VBE
-2.0
-2.5
2.0 3.0 5.0
+0.5
[email protected] 1.0V
2
10
20 30
50
100 200 300 500
1000 2000
VBE, BASE-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 12. Collector Cut–Off Region
Figure 13. Temperature Coefficients
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5
2N4918 thru 2N4920
PACKAGE DIMENSIONS
TO–225AA
CASE 77–09
ISSUE W
–B–
U
F
Q
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
1 2 3
H
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
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6
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
---
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
---
2N4918 thru 2N4920
Notes
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7
2N4918 thru 2N4920
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2N4918/D