ISC 2N4919

Inchange Semiconductor
Product Specification
2N4918 2N4919 2N4920
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type 2N4921/4922/4923
・Excellent safe operating area
・Low collector saturation voltage
APPLICATIONS
・For driver circuits ,switching ,and
amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
体
导
半
固电
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
O
IC
M
E
S
GE
PARAMETER
N
A
H
C
IN
Collector-base voltage
Collector-emitter voltage
CONDITIONS
2N4918
2N4919
Open emitter
VALUE
-60
-80
2N4918
-40
2N4919
Open base
Emitter-base voltage
UNIT
-40
2N4920
2N4920
VEBO
R
O
T
C
NDU
-60
V
V
-80
Open collector
-5
V
IC
Collector current
-1
A
ICM
Collector current-Peak
-3
A
IB
Base current
-1
A
PD
Total power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
VALUE
UNIT
4.16
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N4918 2N4919 2N4920
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N4918
VCEO(SUS)
Collector-emitter
sustaining voltage
2N4919
MIN
TYP.
MAX
UNIT
-40
IC=-0.1A; IB=0
V
-60
-80
2N4920
VCEsat
Collector-emitter saturation voltage
IC=-1.0A ;IB=-0.1A
-0.6
V
VBEsat
Base-emitter saturation voltage
IC=-1.0A ;IB=-0.1A
-1.3
V
Base-emitter on voltage
IC=-1A ; VCE=-1V
-1.3
V
-0.5
mA
VBE
ICEO
ICBO
ICEX
IEBO
Collector cut-off current
2N4918
VCE=-20V; IB=0
2N4919
VCE=-30V; IB=0
2N4920
VCE=-40V; IB=0
半导体
CTOR
Collector cut-off current
VCB= Rated VCBO ;IE=0
Collector cut-off current
VCE= Rated VCEO; VBE(off)=1.5V
TC=125℃
Emitter cut-off current
VEB=-5V; IC=0
DC current gain
IC=-50mA ; VCE=-1V
40
固电
U
D
N
ICO
M
E
S
E
ANG
hFE-2
INCH
DC current gain
IC=-500mA ; VCE=-1V
30
hFE-3
DC current gain
IC=-1A ; VCE=-1V
10
fT
Transition frequency
IC=-250mA ; VCE=-10V;f=1MHz
3.0
COB
Output capacitance
f=100kHz ; VCB=-10V;IE=0
hFE-1
2
-0.1
mA
-0.1
-0.5
mA
-1.0
mA
150
MHz
100
pF
Inchange Semiconductor
Product Specification
2N4918 2N4919 2N4920
Silicon PNP Power Transistors
PACKAGE OUTLINE
体
导
半
固电
N
A
H
C
IN
O
R
O
T
C
NDU
IC
M
E
S
GE
Fig.2 Outline dimensions
3