isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3545 DESCRIPTION ·Low Base Time Constant; rbb’ • CC = 4 ps TYP. ·High Gain Bandwidth Product fT= 2 GHz TYP. @ IE= -5mA, VCE= 10V ·Low Feedback Capacitance; Cre = 0.48 pF TYP. APPLICATIONS ·Designed for use as UHF oscillator and mixer in a tuner of a TV receiver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 125 ℃ -65~125 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3545 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT Collector-Emitter Saturation Voltage IC= 10mA ; IB= 1mA 0.5 V ICBO Collector Cutoff Current VCB= 12V; IE= 0 0.1 μA hFE DC Current Gain IC= 5mA ; VCE= 10V 50 Current-Gain—Bandwidth Product IE= -5mA ; VCE= 10V 1.3 Feedback Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz Base Time Constant VCE= 10V,IE = -5mA,f = 31.9 MHz VCE(sat) fT Cre rbb’ • CC PARAMETER hFE Classifications Class M/P L/Q K/R Marking T42 T43 T44 hFE 50-100 70-140 120-250 isc Website：www.iscsemi.cn 2 250 2.0 GHz 0.48 1.0 pF 4 10 ps INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC3545 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3545 S-PARAMETER VCE = 10 V, IC = 5 mA , ZO = 50Ω S21 S11 Freque. S12 S22 MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 200 0.472 -80.6 7.581 114.1 0.037 60.2 0.780 -8.2 400 0.310 -117.3 4.029 92.9 0.055 55.5 0.723 -15.1 600 0.261 -139.9 2.926 81.7 0.077 60.2 0.721 -18.8 800 0.262 -160.4 2.118 70.2 0.098 62.8 0.698 -22.6 1000 0.270 -176.6 1.860 62.8 0.108 64.6 0.691 -25.1 1200 0.288 172.3 1.504 54.4 0.125 65.7 0.688 -30.7 1400 0.323 162.4 1.413 47.9 0.148 66.4 0.664 -35.1 1600 0.356 151.0 1.201 40.9 0.160 68.0 0.658 -39.3 VCE = 10 V, IC = 10 mA , ZO = 50Ω S21 S11 Freque. S12 S22 MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 200 0.323 -101.4 8.735 104.9 0.037 49.5 0.711 -8.5 400 0.246 -136.2 4.383 87.4 0.052 65.2 0.693 -13.8 600 0.247 -158.8 3.120 78.0 0.074 67.3 0.696 -16.8 800 0.273 -173.7 2.259 67.2 0.086 68.2 0.679 -20.0 1000 0.299 172.6 1.968 60.1 0.102 69.4 0.671 -23.8 1200 0.314 162.7 1.589 52.5 0.126 70.1 0.663 -26.6 1400 0.353 154.5 1.483 46.3 0.146 70.4 0.648 -33.7 1600 0.380 144.7 1.257 39.5 0.166 70.3 0.648 -38.5 isc Website：www.iscsemi.cn 4 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC3545