TISP7350H3SLL

oH
S
CO
M
PL
IA
NT
TISP7350H3SLL
*R
TRIPLE ELEMENT
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTOR
TISP7350H3SLL Overvoltage Protector
Simultaneous 500 A 2/10 GR-1089-CORE Rating
3-SIP (Long Lead) Package (Top View)
Simultaneous 100 A 10/1000 GR-1089-CORE Rating
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
Low Voltage Overshoot Under Surge
Device Name
TISP7350H3SLL
VDRM
V(BO)
V
V
275
350
T
1
G
2
R
3
MDXXAZA
Device Symbol
E
T
E
L
O
S
B
O
Rated for International Surge Wave Shapes
- Single and Simultaneous Impulses
Wave Shape
T
IPPSM
Standard
A
2/10
GR-1089-CORE
500
8/20
IEC 61000-4-5
350
TIA-968-A
250
10/160
10/700
10/560
10/1000
R
TIA-968-A
200
ITU-T K.20/21
TIA-968-A
130
GR-1089-CORE
100
G
SD-TISP7-001-a
..................................................UL Recognized Component
Description
The TISP7350H3SLL limits overvoltages between the telephone line Ring and Tip conductors and Ground. Overvoltages are normally caused
by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line.
Each terminal pair, T-G, R-G and T-R, has a symmetrical voltage-triggered bidirectional thyristor protection characteristic. Overvoltages are
initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage
onstate. This low-voltage on-state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar
holding current helps prevent d.c. latchup as the diverted current subsides.
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are
virtually transparent to the system in normal operation. They are designed to voltage limit and withstand the listed international lightning surges
in both polarities.
How to Order
Device
TISP7350H3SLL
Package
3-SIP (Long Lead)
Carrier
Order As
Tape & Ammo Pack
TISP7350H3SLLAS
Tube
TISP7350H3SLL-S
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
FEBRUARY 2005 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Marking Code
SP7350H3
Std. Qty.
2000
1000
TISP7350H3SLL Overvoltage Protector
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage (see Note 1)
Symbol
Value
Unit
VDRM
±275
V
IPPSM
±500
±350
±250
±225
±200
±200
±200
±130
±100
A
55
60
0.9
A
diT/dt
400
A/µs
TJ
-40 to +150
°C
Tstg
-65 to +150
°C
Non-repetitive peak impulse current (see Notes 2 and 3)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage wave shape, 8/20 current combination wave generator)
10/160 µs (TIA-968-A, 10/160 µs voltage wave shape)
4/250 µs (ITU-T K.20/21, 10/700 µs voltage waveshape, dual)
0.2/310 µs (CNET I 31-24, 0.5/700 µs voltage waveshape)
5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape, single)
5/320 µs (TIA-968-A, 9/720 µs voltage wave shape)
10/560 µs (TIA-968-A, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
E
T
E
L
O
S
B
O
Non-repetitive peak on-state current (see Notes 2, 3 and 4)
20 ms, 50 Hz (full sine wave)
16.7 ms 60 Hz (full sine wave)
1000 s, 50 Hz a.c.
ITSM
Initial rate of rise of on-state current, exponential current ramp, maximum ramp value < 200 A
Junction temperature
Storage temperature range
NOTES: 1. Derate value at -0.13 %/°C for ambient temperatures below 25 °C.
2. Initially the device must be in thermal equilibrium with TJ = 25 °C.
3. These non-repetitive rated currents are peak values of either polarity. The rated current values may be applied to any terminal pair.
Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G terminal return
current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the device returns to its
initial conditions.
4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C.
Electrical Characteristics for any Terminal Pair, TA = 25 °C (Unless Otherwise Noted)
Parameter
IDRM
Repetitive peak off-state current
V(BO)
Breakover voltage
Test Conditions
Min Typ Max
TA = 25 °C
TA = 85 °C
µA
dv/dt = ±750 V/ms, RSOURCE = 300 Ω
±350
V
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
±362
V
±800
mA
VD = VDRM
V(BO)
Impulse breakover voltage
I(BO)
Breakover current
dv/dt = ±750 V/ms, RSOURCE = 300 Ω
VT
On-state voltage
IT = ±5 A, tw = 100 µs
IH
Holding current
IT = ±5 A, di/dt = ±30 mA/ms
±100
±150
dv/dt Critical rate of rise of off-state voltage Linear voltage ramp, maximum ramp value < 0.85VDRM
ID
CO
Off-state current
Off-state capacitance
Unit
±5
±10
VD = ±50 V
V
±600
mA
kV/µs
±5
TA = 85 °C
f = 1 MHz, Vd = 1 V rms, VD = 0 V
f = 1 MHz, Vd = 1 V rms, VD = -1 V
f = 1 MHz, Vd = 1 V rms, VD = -2 V
f = 1 MHz, Vd = 1 V rms, VD = -50 V
f = 1 MHz, Vd = 1 V rms, VD = -100 V
±5
±10
µA
84
67
62
28
26
pF
FEBRUARY 2005 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7350H3SLL Overvoltage Protector
Thermal Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
Junction to ambient thermal resistance
RθJA
NOTE:
Min
Typ
Max
Unit
50
°C/W
EIA/JESD51-3 PCB, IT = ITSM(1000)
(see Note 5)
5. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Parameter Measurement Information
+i
E
T
E
L
O
S
B
O
I PPSM
Quadrant I
Switching
Characteristic
ITSM
ITRM
IT
VT
V(BO)
I(BO)
IH
V (BR)M
IDRM
V DRM
-v
I(BR)
V (BR)
VD
ID
ID
VD
IDRM
V (BR)
I(BR)
+v
V DRM
V (BR)M
IH
I(BO)
V(BO)
VT
IT
ITRM
ITSM
Quadrant III
Switching
Characteristic
I PPSM
-i
Figure 1. Voltage-Current Characteristic for Terminal Pairs
FEBRUARY 2005 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
PM-TISP4xxx-001-a
Bourns Sales Offices
Region
The Americas:
Europe:
Asia-Pacific:
Phone
+1-951-781-5500
+41-41-7685555
+886-2-25624117
Fax
+1-951-781-5700
+41-41-7685510
+886-2-25624116
E
T
E
L
O
S
B
O
Technical Assistance
Region
The Americas:
Europe:
Asia-Pacific:
Phone
+1-951-781-5500
+41-41-7685555
+886-2-25624117
Fax
+1-951-781-5700
+41-41-7685510
+886-2-25624116
www.bourns.com
Bourns® products are available through an extensive network of manufacturer’s representatives, agents and distributors.
To obtain technical applications assistance, a quotation, or to place an order, contact a Bourns representative in your area.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
COPYRIGHT© 2005, BOURNS, INC. LITHO IN U.S.A. e 06/05 TSP0410