BD246, A, B, C PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS The BD246 series are PNP power transistors in a TO3PN envelope. They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD245, A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage (IC = -30mA) VCER Collector-Emitter Voltage (RBE = 100 Ω) VEBO Emitter-Base Voltage IC Collector Current IB PT TJ TS Base Current Power Dissipation Junction Temperature Storage Temperature Value BD246 BD246A BD246B BD246C BD246 BD246A BD246B BD246C IC ICM Tmb = 25° C -45 -60 -80 -100 -55 -70 -90 -115 -5.0 -10 -15 -3 80 -65 to +150 -65 to +150 Unit V V V A A Watts °C THERMAL CHARACTERISTICS Symbol RthJC RthJA 25/09/2012 Ratings Junction to Case Thermal Resistance Junction to free air Thermal Resistance COMSET SEMICONDUCTORS Value Unit 1.56 42 °C / W °C / W 1/3 BD246, A, B, C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings ICES Collector- Emitter Cut-off Current ICEO Collector Cut-off Current IEBO Emitter Cut-off Current VCEO Collector- Emitter Breakdown Voltage (*) hFE VCE(SAT) VBE hfe |hfe| Test Condition(s) VCE VCE VCE VCE = -55 V , VBE = 0 = -70 V , VBE = 0 = -90 V , VBE = 0 = -115 V , VBE = 0 VCE = -30 V , IB = 0 VCE = -60 V , IB = 0 BD246 BD246A BD246B BD246C BD246 BD246A BD246B BD246C VE B = -5 V , IC = 0 IC = -30 mA, IB = 0 BD246 BD246A BD246B BD246C VCE = -4 V, IC = -1 A DC Current Gain (*) VCE = -4 V, I C= -3 A VCE = -4 V, IC = -10 A IC = -3 A, IB = -300 mA Collector-Emitter saturation Voltage (*) IC = -10 A, IB = -2.5 A VCE = -4 V, IC = -3 A Base-Emitter Voltage(*) VCE = -4 V, IC = -10 A Small Signal forward V = -10 V, IC = -500 mA, f = 1MHz Current Transfer ratio CE Small Signal forward V = -10 V, IC = -500 mA, f = 1MHz Current Transfer ratio CE Min Typ Mx Unit - - -0.4 mA - - -0.7 mA - - -1 mA -45 -60 -80 -100 40 20 4 - - -1 -4 -1.6 -3 20 - - V V V 3 - - Typ Mx Unit - 0.2 - µs - 0.8 - RESISTIVE-LOAD-SWITCHING CHARACTERISTICS AT 25°C CASE TEMPERATURE Symbol Ratings Turn-on Time ton toff 25/09/2012 Turn-off Time Test Condition(s) IC = -1 A , IB(on) = -100 mA , IB(off) = 100 mA VBE(off) = 3.7 V , RL = 20 Ω , tp = 20 µs dc < 2% IC = -1 A , IB(on) = -100 mA , IB(off) = 100 mA VBE(off) = 3.7 V , RL = 20 Ω , tp = 20 µs dc < 2% COMSET SEMICONDUCTORS Min 2/3 BD246, A, B, C MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package DIMENSIONS (mm) Min. A B C D E F G H J K L M N O P R S T Pin 1 : Pin 2 : Pin 3 : Max. 15.20 1.90 4.60 3.10 0.35 5.35 20.00 19.60 0.95 4.80 1600 2.10 5.00 3.30 9.60 2.00 0.55 1.40 5.55 20.20 1.25 2.00 3.00 4.00 4.00 1.80 5.20 Base Collector Emitter Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 25/09/2012 [email protected] COMSET SEMICONDUCTORS 3/3