BDT60, BDT60A, BDT60B, BDT60C

BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BDT61, BDT61A, BDT61B and BDT61C
●
50 W at 25°C Case Temperature
●
4 A Continuous Collector Current
●
Minimum hFE of 750 at 1.5 V, 3 A
This series is obsolete and
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BDT60
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
BDT60A
V CBO
BDT60C
-120
-60
BDT60B
V CEO
BDT60C
Emitter-base voltage
-80
-100
BDT60
BDT60A
UNIT
-60
E
T
E
L
O
S
B
O
BDT60B
VALUE
-80
-100
V
V
-120
VEBO
-5
IC
-4
A
IB
-0.1
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Ptot
50
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Ptot
2
W
Continuous collector current
Continuous base current
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
V
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TA
-65 to +150
°C
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
BDT60
V(BR)CEO
ICEO
ICBO
IEBO
hFE
V CE(sat)
VBE(on)
VEC
Collector-emitter
TYP
MAX
BDT60A
-80
BDT60B
-100
BDT60C
-120
V
IC = -30 mA
IB = 0
VCE = -30 V
IB = 0
BDT60
-0.5
Collector-emitter
VCE = -40 V
IB = 0
BDT60A
-0.5
cut-off current
VCE = -50 V
IB = 0
BDT60B
-0.5
breakdown voltage
(see Note 3)
VCE = -60 V
IB = 0
BDT60C
-0.5
VCB = -60 V
IE = 0
BDT60
-0.2
VCB = -80 V
IE = 0
BDT60A
-0.2
VCB = -100 V
IE = 0
BDT60B
-0.2
Collector cut-off
VCB = -120 V
IE = 0
BDT60C
-0.2
current
VCB = -30 V
IE = 0
TC = 150°C
BDT60
-2.0
VCB = -40 V
IE = 0
TC = 150°C
BDT60A
-2.0
VCB = -50 V
IE = 0
TC = 150°C
BDT60B
-2.0
VCB = -60 V
IE = 0
TC = 150°C
BDT60C
-2.0
VEB =
-5 V
IC = 0
VCE =
-3 V
IC =
-1.5 A
(see Notes 3 and 4)
-6 mA
IC =
-1.5 A
-3 V
IC =
-1.5 A
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
VCE =
IE =
-1.5 A
mA
mA
-5
mA
(see Notes 3 and 4)
-2.5
V
(see Notes 3 and 4)
-2.5
V
-2.0
V
E
T
E
L
O
S
B
O
IB =
UNIT
-60
750
IB = 0
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
2.5
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = -2 A
IB(on) = -8 mA
IB(off) = 8 mA
toff
Turn-off time
VBE(off) = 5 V
RL = 20 Ω
tp = 20 µs, dc ≤ 2%
1
µs
4.5
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS115AD
20000
TC = -40°C
TC = 25°C
TC = 100°C
10000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
1000
-1·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
-1·5
-1·0
-0·5
E
T
E
L
O
S
B
O
VCE = -3 V
tp = 300 µs, duty cycle < 2%
100
-0·5
TCS115AB
-2·0
-5·0
0
-0·5
IC - Collector Current - A
-1·0
TC = -40°C
TC = 25°C
TC = 100°C
-5·0
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS115AC
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
-2·5
TC = -40°C
TC = 25°C
TC = 100°C
-2·0
-1·5
-1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
-0·5
-0·5
-1·0
-5·0
IC - Collector Current - A
Figure 3.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
-10
SAS115AB
-1·0
-0·1
BDT60
BDT60A
BDT60B
BDT60C
E
T
E
L
O
S
B
O
-0.01
-1·0
-10
-100
-1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS110AA
Ptot - Maximum Power Dissipation - W
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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