BD646, BD648, BD650, BD652

BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BD645, BD647, BD649 and BD651
●
62.5 W at 25°C Case Temperature
●
8 A Continuous Collector Current
●
Minimum hFE of 750 at 3V, 3 A
This series is obsolete and
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
SYMBOL
BD646
-80
BD648
-100
E
T
E
L
O
S
B
O
BD650
V CBO
BD652
-140
-60
BD648
BD650
V CEO
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
UNIT
V
-120
BD646
BD652
Emitter-base voltage
VALUE
-80
V
-100
-120
VEBO
-5
IC
-8
A
ICM
-12
A
V
IB
-0.3
A
Ptot
62.5
W
Ptot
2
W
½LIC2
50
mJ
°C
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
260
°C
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω,
V BE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
BD646
V(BR)CEO
ICEO
ICBO
IEBO
hFE
V CE(sat)
VBE(sat)
VBE(on)
Collector-emitter
TYP
MAX
BD648
-80
BD650
-100
BD652
-120
V
IC = -30 mA
IB = 0
VCE = -30 V
IB = 0
BD646
-0.5
Collector-emitter
VCE = -40 V
IB = 0
BD648
-0.5
cut-off current
VCE = -50 V
IB = 0
BD650
-0.5
breakdown voltage
(see Note 5)
VCE = -60 V
IB = 0
BD652
-0.5
VCB = -60 V
IE = 0
BD646
-0.2
VCB = -80 V
IE = 0
BD648
-0.2
VCB = -100 V
IE = 0
BD650
-0.2
Collector cut-off
VCB = -120 V
IE = 0
BD652
-0.2
current
VCB = -40 V
IE = 0
TC = 150°C
BD646
-2.0
VCB = -50 V
IE = 0
TC = 150°C
BD648
-2.0
VCB = -60 V
IE = 0
TC = 150°C
BD650
-2.0
VCB = -70 V
IE = 0
TC = 150°C
BD652
-2.0
VEB =
-5 V
IC = 0
(see Notes 5 and 6)
VCE =
-3 V
IC =
-3 A
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
voltage
E
T
E
L
O
S
B
O
(see Notes 5 and 6)
UNIT
-60
-5
mA
mA
mA
750
-2
IB =
-12 mA
IC =
-3 A
IB =
-50 mA
IC =
-5 A
IB =
-50 mA
IC =
-5 A
(see Notes 5 and 6)
-3
V
IC =
-3 A
(see Notes 5 and 6)
-2.5
V
VCE =
-3 V
(see Notes 5 and 6)
-2.5
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
2.0
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
2
TYP
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS135AD
50000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
-1·0
tp = 300 µs, duty cycle < 2%
IB = I C / 100
-1·5
-1·0
E
T
E
L
O
S
B
O
VCE = -3 V
tp = 300 µs, duty cycle < 2%
100
-0·5
TCS135AB
-2·0
-10
-0·5
-0·5
IC - Collector Current - A
-1·0
TC = -40°C
TC = 25°C
TC = 100°C
-10
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS135AC
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
-2·5
TC = -40°C
TC = 25°C
TC = 100°C
-2·0
-1·5
-1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
-0·5
-0·5
-1·0
-10
IC - Collector Current - A
Figure 3.
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
-10
SAS135AC
-1·0
-0·1
BD646
BD648
BD650
BD652
E
T
E
L
O
S
B
O
-0.01
-1·0
-10
-100
-1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AC
Ptot - Maximum Power Dissipation - W
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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