BDT61, BDT61A, BDT61B, BDT61C

BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BDT60, BDT60A, BDT60B and BDT60C
●
50 W at 25°C Case Temperature
●
4 A Continuous Collector Current
●
Minimum hFE of 750 at 1.5 V, 3 A
This series is obsolete and
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BDT61
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
BDT61A
V CBO
BDT61C
120
60
BDT61B
V CEO
BDT61C
Emitter-base voltage
80
100
BDT61
BDT61A
UNIT
60
E
T
E
L
O
S
B
O
BDT61B
VALUE
80
100
V
V
120
VEBO
5
IC
4
A
IB
0.1
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Ptot
50
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Ptot
2
W
Continuous collector current
Continuous base current
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
V
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TA
-65 to +150
°C
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
BDT61
V(BR)CEO
ICEO
ICBO
IEBO
hFE
V CE(sat)
VBE(on)
VEC
Collector-emitter
TYP
MAX
BDT61A
80
BDT61B
100
BDT61C
120
V
IC = 30 mA
IB = 0
VCE = 30 V
IB = 0
BDT61
0.5
Collector-emitter
VCE = 40 V
IB = 0
BDT61A
0.5
cut-off current
VCE = 50 V
IB = 0
BDT61B
0.5
breakdown voltage
(see Note 3)
VCE = 60 V
IB = 0
BDT61C
0.5
VCB = 60 V
IE = 0
BDT61
0.2
VCB = 80 V
IE = 0
BDT61A
0.2
VCB = 100 V
IE = 0
BDT61B
0.2
Collector cut-off
VCB = 120 V
IE = 0
BDT61C
0.2
current
VCB = 30 V
IE = 0
TC = 150°C
BDT61
2.0
VCB = 40 V
IE = 0
TC = 150°C
BDT61A
2.0
VCB = 50 V
IE = 0
TC = 150°C
BDT61B
2.0
VCB = 60 V
IE = 0
TC = 150°C
BDT61C
2.0
VEB =
5V
IC = 0
VCE =
3V
IC = 1.5 A
(see Notes 3 and 4)
6 mA
IC = 1.5 A
3V
IC = 1.5 A
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
VCE =
IE =
1.5 A
mA
mA
5
mA
(see Notes 3 and 4)
2.5
V
(see Notes 3 and 4)
2.5
V
2
V
E
T
E
L
O
S
B
O
IB =
UNIT
60
750
IB = 0
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
2.5
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = 2 A
IB(on) = 8 mA
IB(off) = -8 mA
toff
Turn-off time
VBE(off) = -5 V
RL = 20 Ω
tp = 20 µs, dc ≤ 2%
1
µs
4.5
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS110AD
20000
TC = -40°C
TC = 25°C
TC = 100°C
10000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
1000
1·0
tp = 300 µs, duty cycle < 2%
IB = I C / 100
1·5
1·0
0·5
E
T
E
L
O
S
B
O
VCE = 3 V
tp = 300 µs, duty cycle < 2%
100
0·5
TCS110AB
2·0
5·0
0
0·5
IC - Collector Current - A
1·0
TC = -40°C
TC = 25°C
TC = 100°C
5·0
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS110AC
VBE(sat) - Base-Emitter Saturation Voltage - V
3·0
2·5
TC = -40°C
TC = 25°C
TC = 100°C
2·0
1·5
1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
0·5
1·0
5·0
IC - Collector Current - A
Figure 3.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
SAS110AB
1·0
0·1
BDT61
BDT61A
BDT61B
BDT61C
E
T
E
L
O
S
B
O
0.01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS110AA
Ptot - Maximum Power Dissipation - W
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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