BFP650 Data Sheet (1.5 MB, EN)

BFP650
High Linearity Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.1, 2012-09-13
RF & Protection Devices
Edition 2012-09-13
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP650
BFP650, High Linearity Silicon Germanium Bipolar RF Transistor
Revision History: 2012-09-13, Revision 1.1
Page
Subjects (changes since previous revision)
This data sheet replaces the revision from 2010-10-22.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the data sheet have been expanded
and updated.
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Data Sheet
3
Revision 1.1, 2012-09-13
BFP650
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
5.1
5.2
5.3
5.4
5.5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
7
Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Data Sheet
4
11
11
11
12
17
20
Revision 1.1, 2012-09-13
BFP650
List of Figures
List of Figures
Figure 4-1
Figure 5-1
Figure 5-2
Figure 5-3
Figure 5-4
Figure 5-5
Figure 5-6
Figure 5-7
Figure 5-8
Figure 5-9
Figure 5-10
Figure 5-11
Figure 5-12
Figure 5-13
Figure 5-14
Figure 5-15
Figure 5-16
Figure 5-17
Figure 5-18
Figure 5-19
Figure 7-1
Figure 7-2
Figure 7-3
Figure 7-4
Data Sheet
Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BFP650 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in μA. . . . . . . . . . . . .
DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . .
Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . .
3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters . . . . . . . . . . . . . . . . .
Collector Base Capacitance CCCB = f (VCB), f = 1 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 70 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (VCE), IC = 70 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . .
Input Matching S11 = f (f), VCE = 3 V, IC = 30 / 70 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Source Impedance for Minimum Noise Figure opt = f (f), VCE = 3 V, IC = 30 / 70 mA . . . . . . . . . . .
Output Matching S22 = f (f), VCE = 3 V, IC = 30 / 70 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f (f), VCE = 3 V, IC = 30 / 70 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt= Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . .
Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . .
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Marking Example (Marking BFP650: R5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
10
12
17
17
18
18
19
20
20
21
21
22
22
23
23
24
24
25
25
26
28
28
28
28
Revision 1.1, 2012-09-13
BFP650
List of Tables
List of Tables
Table 3-1
Table 4-1
Table 5-1
Table 5-2
Table 5-3
Table 5-4
Table 5-5
Table 5-6
Table 5-7
Table 5-8
Table 5-9
Table 5-10
Data Sheet
Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6
Revision 1.1, 2012-09-13
BFP650
Product Brief
1
Product Brief
The BFP650 is a high linearity wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high
volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports
voltages up to VCEO = 4 V and currents up to IC = 150 mA. With its high linearity at currents as low as 30 mA the
device supports energy efficient designs. The typical transition frequency is approximately 42 GHz, hence the
device offers high power gain at frequencies up to 5 GHz in amplifier applications. the device is housed in an easy
to use plastic package with visible leads.
Data Sheet
7
Revision 1.1, 2012-09-13
BFP650
Features
2
•
•
•
•
•
•
•
Features
Linear low noise driver amplifier for RF frontends up to 5 GHz
based on Infineon´s reliable, high volume SiGe:C wafer technology
Output compression point OP1dB = 17 dBm
at 70 mA, 3 V, 2.4 GHz, 50 Ω system
Output 3rd order intermodulation point OIP3 = 30 dBm
at 70 mA, 3 V, 2.4 GHz, 50 Ω system
Maximum available gain Gma = 17.5 dB at 70 mA, 3 V, 2.4 GHz
Minimum noise figure NFmin = 1 dB at 30 mA, 3 V, 2.4 GHz
Easy to use Pb-free (RoHS compliant) and halogen-free standard
package with visible leads
Qualification report according to AEC-Q101 available
Application Examples
Driver amplifier
•
•
•
ISM bands 434 and 868 MHz
1.9 GHz cordless phones
CATV LNA
Transmitter driver amplifier
•
2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX
Output stage LNA for active antennas
•
•
•
TV, GPS, SDARS
2.4 / 5 GHz WLAN
2.4 / 3.5 / 5 GHz WiMAX, etc
Suitable for 5 - 10.5 GHz oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
Package
BFP650
SOT343
Data Sheet
Pin Configuration
1=B
2=E
8
3=C
Marking
4=E
R5s
Revision 1.1, 2012-09-13
BFP650
Maximum Ratings
3
Maximum Ratings
Table 3-1
Maximum Ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Min.
Collector emitter voltage
Unit
Note / Test Condition
Max.
Open base
VCEO
–
4.0
V
TA = 25 °C
–
3.7
V
TA = -55 °C
Collector emitter voltage
VCES
–
13
V
E-B short circuited
Collector base voltage
VCBO
–
13
V
Open emitter
Emitter base voltage
VEBO
–
1.2
V
Open collector
Collector current
IC
–
150
mA
–
IB
–
10
mA
–
Ptot
–
500
mW
TS ≤ 78 °C
TJ
–
150
°C
–
Base current
Total power dissipation
Junction temperature
1)
Storage temperature
TStg
-55
150
°C
–
1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Data Sheet
9
Revision 1.1, 2012-09-13
BFP650
Thermal Characteristics
4
Thermal Characteristics
Table 4-1
Thermal Resistance
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
1)
Junction - soldering point
RthJS
–
140
–
K/W
–
1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
600
500
300
P
tot
[mW]
400
200
100
0
0
25
50
75
TS [°C]
100
125
150
Figure 4-1 Total Power Dissipation Ptot = f (Ts)
Data Sheet
10
Revision 1.1, 2012-09-13
BFP650
Electrical Characteristics
5
Electrical Characteristics
5.1
DC Characteristics
Table 5-1
DC Characteristics at TA = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage
V(BR)CEO
Values
Min.
Typ.
Max.
4
4.5
–
Unit
Note / Test Condition
V
IC = 3 mA, IB = 0
Open base
Collector emitter leakage current
ICES
–
0.1
1
μA
VCE = 13 V, VBE = 0
–
1
40
nA
VCE = 5 V, VBE = 0
E-B short circuited
Collector base leakage current
ICBO
–
1
40
nA
VCB = 5 V, IE = 0
Open emitter
Emitter base leakage current
IEBO
–
10
500
nA
VEB = 0.5 V, IC = 0
Open collector
DC current gain
hFE
100
170
250
VCE = 3 V, IC = 70 mA
Pulse measured
5.2
General AC Characteristics
Table 5-2
General AC Characteristics at TA = 25 °C
Parameter
Transition frequency
Symbol
fT
Values
Min.
Typ.
Max.
31
42
–
Unit
Note / Test Condition
GHz
VCE = 3 V, IC = 70 mA,
f = 1 GHz
Collector base capacitance
CCB
–
0.26
0.4
pF
VCB = 3 V, VBE = 0 V
f = 1 MHz
Emitter grounded
Collector emitter capacitance
CCE
–
0.45
–
pF
VCE = 3 V, VBE = 0 V
f = 1 MHz
Base grounded
Emitter base capacitance
CEB
–
1.3
–
pF
VEB = 0.5 V, VCB = 0 V
f = 1 MHz
Collector grounded
Data Sheet
11
Revision 1.1, 2012-09-13
BFP650
Electrical Characteristics
5.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
VC
Top View
Bias -T
OUT
E
C
B
E
VB
Bias-T
(Pin 1)
IN
Figure 5-1 BFP650 Testing Circuit
Table 5-3
AC Characteristics, VCE = 3 V, f = 150 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
dB
Maximum power gain
High linearity operation point
Gms
–
35.5
–
IC = 30 mA
Class A operation point
Gms
–
38
–
IC = 70 mA
dB
Transducer gain
ZS = ZL = 50 Ω
High linearity operation point
S21
–
35
–
IC = 30 mA
Class A operation point
S21
–
37.5
–
IC = 70 mA
dB
Minimum noise figure
ZS = Zopt
Minimum noise figure
NFmin
–
0.75
–
IC = 30 mA
Associated gain
Gass
–
32
–
IC = 30 mA
dBm
Linearity
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
16.5
–
IC = 70 mA
3rd order intercept point
OIP3
–
29.5
–
IC = 70 mA
Data Sheet
12
Revision 1.1, 2012-09-13
BFP650
Electrical Characteristics
Table 5-4
AC Characteristics, VCE = 3 V, f = 450 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
dB
Maximum power gain
High linearity operation point
Gms
–
30
–
IC = 30 mA
Class A operation point
Gms
–
31.5
–
IC = 70 mA
dB
Transducer gain
ZS = ZL = 50 Ω
High linearity operation point
S21
–
29
–
IC = 30 mA
Class A operation point
S21
–
29.5
–
IC = 70 mA
dB
Minimum noise figure
ZS = Zopt
Minimum noise figure
NFmin
–
0.75
–
IC = 30 mA
Associated gain
Gass
–
29.5
–
IC = 30 mA
dBm
Linearity
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
16.5
–
IC = 70 mA
3rd order intercept point
OIP3
–
30
–
IC = 70 mA
Table 5-5
AC Characteristics, VCE = 3 V, f = 900 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
dB
Maximum power gain
High linearity operation point
Gms
–
25.5
–
IC = 30 mA
Class A operation point
Gms
–
26.5
–
IC = 70 mA
dB
Transducer gain
ZS = ZL = 50 Ω
High linearity operation point
S21
–
23.5
–
IC = 30 mA
Class A operation point
S21
–
24
–
IC = 70 mA
dB
Minimum noise figure
ZS = Zopt
Minimum noise figure
NFmin
–
0.8
–
IC = 30 mA
Associated gain
Gass
–
24.5
–
IC = 30 mA
dBm
Linearity
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
17
–
IC = 70 mA
3rd order intercept point
OIP3
–
31
–
IC = 70 mA
Data Sheet
13
Revision 1.1, 2012-09-13
BFP650
Electrical Characteristics
Table 5-6
AC Characteristics, VCE = 3 V, f = 1.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
dB
Maximum power gain
High linearity operation point
Gms
–
22
–
IC = 30 mA
Class A operation point
Gms
–
22.5
–
IC = 70 mA
dB
Transducer gain
ZS = ZL = 50 Ω
High linearity operation point
S21
–
19
–
IC = 30 mA
Class A operation point
S21
–
19.5
–
IC = 70 mA
dB
Minimum noise figure
ZS = Zopt
Minimum noise figure
NFmin
–
0.85
–
IC = 30 mA
Associated gain
Gass
–
20.5
–
IC = 30 mA
dBm
Linearity
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
17
–
IC = 70 mA
3rd order intercept point
OIP3
–
31
–
IC = 70 mA
Table 5-7
AC Characteristics, VCE = 3 V, f = 1.9 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
dB
Maximum power gain
High linearity operation point
Gma
–
20.5
–
IC = 30 mA
Class A operation point
Gms
–
20
–
IC = 70 mA
dB
Transducer gain
ZS = ZL = 50 Ω
High linearity operation point
S21
–
17
–
IC = 30 mA
Class A operation point
S21
–
17.5
–
IC = 70 mA
dB
Minimum noise figure
ZS = Zopt
Minimum noise figure
NFmin
–
0.95
–
IC = 30 mA
Associated gain
Gass
–
17.5
–
IC = 30 mA
dBm
Linearity
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
17
–
IC = 70 mA
3rd order intercept point
OIP3
–
30.5
–
IC = 70 mA
Data Sheet
14
Revision 1.1, 2012-09-13
BFP650
Electrical Characteristics
Table 5-8
AC Characteristics, VCE = 3 V, f = 2.4 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
dB
Maximum power gain
High linearity operation point
Gma
–
18
–
IC = 30 mA
Class A operation point
Gma
–
17.5
–
IC = 70 mA
dB
Transducer gain
ZS = ZL = 50 Ω
High linearity operation point
S21
–
14.5
–
IC = 30 mA
Class A operation point
S21
–
15
–
IC = 70 mA
dB
Minimum noise figure
ZS = Zopt
Minimum noise figure
NFmin
–
1
–
IC = 30 mA
Associated gain
Gass
–
15
–
IC = 30 mA
dBm
Linearity
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
17
–
IC = 70 mA
3rd order intercept point
OIP3
–
30
–
IC = 70 mA
Table 5-9
AC Characteristics, VCE = 3 V, f = 3.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
dB
Maximum power gain
High linearity operation point
Gma
–
14
–
IC = 30 mA
Class A operation point
Gma
–
14.5
–
IC = 70 mA
dB
Transducer gain
ZS = ZL = 50 Ω
High linearity operation point
S21
–
11
–
IC = 30 mA
Class A operation point
S21
–
11.5
–
IC = 70 mA
dB
Minimum noise figure
ZS = Zopt
Minimum noise figure
NFmin
–
1.2
–
IC = 30 mA
Associated gain
Gass
–
11.5
–
IC = 30 mA
dBm
Linearity
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
17
–
IC = 70 mA
3rd order intercept point
OIP3
–
30
–
IC = 70 mA
Data Sheet
15
Revision 1.1, 2012-09-13
BFP650
Electrical Characteristics
Table 5-10 AC Characteristics, VCE = 3 V, f = 5.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
dB
Maximum power gain
High linearity operation point
Gma
–
10.5
–
IC = 30 mA
Class A operation point
Gma
–
10.5
–
IC = 70 mA
dB
Transducer gain
ZS = ZL = 50 Ω
High linearity operation point
S21
–
6.5
–
IC = 30 mA
Class A operation point
S21
–
7
–
IC = 70 mA
dB
Minimum noise figure
ZS = Zopt
Minimum noise figure
NFmin
–
1.6
–
IC = 30 mA
Associated gain
Gass
–
8.5
–
IC = 30 mA
dBm
Linearity
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
16.5
–
IC = 70 mA
3rd order intercept point
OIP3
–
29.5
–
IC = 70 mA
Notes
1. AC parameter limits verified by random sampling.
2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all
measured result.
3. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
16
Revision 1.1, 2012-09-13
BFP650
Electrical Characteristics
5.4
Characteristic DC Diagrams
160
140
940µA
810µA
120
690µA
IC [mA]
100
575µA
460µA
80
350µA
60
260µA
40
160µA
80µA
20
18µA
0
0
1
2
3
4
5
VCE [V]
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in μA
120
110
100
hFE
90
80
70
60
50
0.1
1
10
100
1000
IC [mA]
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V
Data Sheet
17
Revision 1.1, 2012-09-13
BFP650
Electrical Characteristics
1000
100
IC [mA]
10
1
0.1
0.01
0.6
0.65
0.7
0.75
0.8
0.85
0.9
VBE [V]
Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V
10
IB [mA]
1
0.1
0.01
0.001
0.0001
0.6
0.65
0.7
0.75
0.8
0.85
0.9
VBE [V]
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
Data Sheet
18
Revision 1.1, 2012-09-13
BFP650
Electrical Characteristics
1.E-05
IB [A]
1.E-06
1.E-07
1.E-08
1.E-09
0.8
1
1.2
1.4
1.6
1.8
2
VEB [V]
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V
Data Sheet
19
Revision 1.1, 2012-09-13
BFP650
Electrical Characteristics
5.5
Characteristic AC Diagrams
45
4.00V
40
35
fT [GHz]
30
3.00V
25
2.50V
20
15
2.00V
10
5
0
1.00V
0
20
40
60
80
100
IC [mA]
120
140
160
180
160
180
Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V
32
30
OIP3 [dBm]
28
3V, 2.4GHz
4V, 2.4GHz
3V, 3.5GHz
4V, 3.5GHz
26
24
22
20
18
0
20
40
60
80
100
IC [mA]
120
140
Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters
Data Sheet
20
Revision 1.1, 2012-09-13
BFP650
Electrical Characteristics
0.6
0.5
CCB [pF]
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
2
VCB [V]
2.5
3
3.5
4
9
10
Figure 5-9 Collector Base Capacitance CCCB = f (VCB), f = 1 MHz
42
39
36
33
Gms
30
G [dB]
27
24
21
Gma
18
15
12
|S |2
21
9
6
3
0
0
1
2
3
4
5
6
f [GHz]
7
8
Figure 5-10 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 70 mA
Data Sheet
21
Revision 1.1, 2012-09-13
BFP650
Electrical Characteristics
42
39
0.15GHz
36
33
0.45GHz
30
G [dB]
27
0.90GHz
24
21
1.50GHz
1.90GHz
2.40GHz
18
15
3.50GHz
12
9
5.50GHz
6
10.00GHz
3
0
0
20
40
60
80
100
IC [mA]
120
140
160
180
Figure 5-11 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
42
39
0.15GHz
36
33
0.45GHz
30
G [dB]
27
0.90GHz
24
1.50GHz
21
18
1.90GHz
2.40GHz
15
3.50GHz
12
5.50GHz
9
10.00GHz
6
3
0
0.5
1
1.5
2
2.5
3
VCE [V]
3.5
4
4.5
5
Figure 5-12 Maximum Power Gain Gmax = f (VCE), IC = 70 mA, f = Parameter in GHz
Data Sheet
22
Revision 1.1, 2012-09-13
BFP650
Electrical Characteristics
1
1.5
0.5
8
7
9
2
10
6
0.4
5
0.3
3
4
4
3
0.2
5
0.03 to 10 GHz
2
0.1
0.1
0
10
0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
1
−0.1
−10
−0.2
−5
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
70 mA
30 mA
−1
Figure 5-13 Input Matching S11 = f (f), VCE = 3 V, IC = 30 / 70 mA
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
0.1
10
0.45GHz
0.1
0
0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
0.9GHz
−0.1
−10
1.9GHz
2.4GHz
I = 30mA
c
−0.2
3.5GHz
−0.3
−5
−4
I = 70mA
c
−3
−0.4
−0.5
−2
−1.5
−1
Figure 5-14 Source Impedance for Minimum Noise Figure opt = f (f), VCE = 3 V, IC = 30 / 70 mA
Data Sheet
23
Revision 1.1, 2012-09-13
BFP650
Electrical Characteristics
1
1.5
0.5
2
0.4
9
10
3
8
0.3
7
6
4
5
0.2
5
4
0.03 to 10 GHz
3
0.1
0.1
0
10
2
0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
1
−0.1
−10
−0.2
−5
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
70 mA
30 mA
−1
Figure 5-15 Output Matching S22 = f (f), VCE = 3 V, IC = 30 / 70 mA
2
1.8
1.6
NFmin [dB]
1.4
1.2
1
IC = 70mA
0.8
IC = 30mA
0.6
0.4
0.2
0
0
0.5
1
1.5
2
f [GHz]
2.5
3
3.5
4
Figure 5-16 Noise Figure NFmin = f (f), VCE = 3 V, IC = 30 / 70 mA, ZS = Zopt
Data Sheet
24
Revision 1.1, 2012-09-13
BFP650
Electrical Characteristics
2
1.8
1.6
NFmin [dB]
1.4
1.2
1
f = 3.5GHz
0.8
f = 2.4GHz
f = 1.9GHz
0.6
f = 0.9GHz
0.4
f = 0.45GHz
0.2
0
0
20
40
60
80
100
Ic [mA]
Figure 5-17 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt= Parameter in GHz
3
2.8
2.6
2.4
NF50 [dB]
2.2
2
1.8
1.6
f = 3.5GHz
1.4
f = 2.4GHz
1.2
f = 1.9GHz
1
0.8
f = 0.9GHz
0.6
f = 0.45GHz
0.4
0
20
40
60
80
100
I [mA]
c
Figure 5-18 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
Data Sheet
25
Revision 1.1, 2012-09-13
BFP650
Electrical Characteristics
3
2.8
2.6
2.4
2.2
NF [dB]
2
1.8
1.6
1.4
1.2
1
ZS = 50Ω
0.8
ZS = ZSopt
0.6
0.4
0
20
40
60
80
100
Ic [mA]
Figure 5-19 Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 2.4 GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA = 25 °C.
Data Sheet
26
Revision 1.1, 2012-09-13
BFP650
Simulation Data
6
Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest
versions before actually starting your design.
You find the BFP650 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these
circuit simulation tools very quickly and conveniently. The model already contains the package parasitic and is
ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin
configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP650 SPICE
GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP
model itself.
Data Sheet
27
Revision 1.1, 2012-09-13
BFP650
Package Information SOT343
7
Package Information SOT343
0.9 ±0.1
2 ±0.2
0.1 MAX.
1.3
0.1
A
1
2
0.1 MIN.
0.15
1.25 ±0.1
3
2.1 ±0.1
4
0.3 +0.1
-0.05
+0.1
0.15 -0.05
+0.1
0.6 -0.05
4x
0.1 M
0.2 M A
SOT343-PO V08
Figure 7-1 Package Outline
1.6
0.8
0.6
1.15
0.9
SOT343-FP V08
Figure 7-2 Package Footprint
Date code (YM)
2005, June
56
Type code
XYs
Manufacturer
Pin 1
Figure 7-3 Marking Example (Marking BFP650: R5s)
0.2
2.3
8
4
Pin 1
2.15
1.1
SOT323-TP V02
Figure 7-4 Tape dimensions
Data Sheet
28
Revision 1.1, 2012-09-13
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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