BFP640 Data Sheet (1.3 MB, EN)

BFP640
Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 2.0, 2015-03-13
RF & Protection Devices
Edition 2015-03-13
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP640
BFP640, Low Noise Silicon Germanium Bipolar RF Transistor
Revision History: 2015-03-13, Revision 2.0
Page
Subjects (major changes since last revision)
This data sheet replaces the revision from 2007-05-29. The reason for the new revision is to increase
the information content for the circuit designer. The performance parameters are now enlisted in a
table containing many relevant application frequencies. The measurements of typical devices have
been repeated and the device description has been expanded by adding several new characteristic
curves. For customers who bought the product prior to the issue of the new revision the old
specifications remain valid.
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Data Sheet
3
Revision 2.0, 2015-03-13
BFP640
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
5.1
5.2
5.3
5.4
5.5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
7
Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data Sheet
4
11
11
11
12
16
19
Revision 2.0, 2015-03-13
BFP640
List of Figures
List of Figures
Figure 4-1
Figure 5-1
Figure 5-2
Figure 5-3
Figure 5-4
Figure 5-5
Figure 5-6
Figure 5-7
Figure 5-8
Figure 5-9
Figure 5-10
Figure 5-11
Figure 5-12
Figure 5-13
Figure 5-14
Figure 5-15
Figure 5-16
Figure 5-17
Figure 5-18
Figure 5-19
Figure 5-20
Figure 7-1
Figure 7-2
Figure 7-3
Figure 7-4
Data Sheet
Total Power Dissipation Ptot = f (TS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BFP640 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA . . . . . . . . . . . . .
DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . .
Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . .
3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, Parameters: VCE in V, f in MHz
3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 2.4 GHz . . . . . .
Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 2.4 GHz . . . . . . . . . .
Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gain Gma,Gms, |S21|2 = f (f), VCE = 3 V, IC = 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (VCE), IC = 25 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . .
Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . . .
Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 25 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . .
Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . .
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Marking Description (Marking BFP640: R4s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
10
12
16
16
17
17
18
19
19
20
20
21
21
22
22
23
23
24
24
25
25
27
27
27
27
Revision 2.0, 2015-03-13
BFP640
List of Tables
List of Tables
Table 3-1
Table 4-1
Table 5-1
Table 5-2
Table 5-3
Table 5-4
Table 5-5
Table 5-6
Table 5-7
Table 5-8
Table 5-9
Data Sheet
Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
AC Characteristics, VCE = 3 V, f = 0.45 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 3 V, f = 0.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6
Revision 2.0, 2015-03-13
BFP640
Product Brief
1
Product Brief
The BFP640 is a linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s
reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design
supports voltages up to VCE = 4.1 V and currents up to IC = 50 mA. With its high linearity at currents as low as 10
mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately
40 GHz, hence the device offers high power gain at frequencies up to 8 GHz in amplifier applications. The device
is housed in an easy to use plastic package with visible leads.
Data Sheet
7
Revision 2.0, 2015-03-13
BFP640
Features
2
•
•
•
•
•
•
•
•
•
Features
Linear low noise amplifier based on Infineon´s reliable,
high volume SiGe:C technology
High linearity OIP3 = 27.5 dBm @ 5.5 GHz, 3 V, 25 mA
High transition frequency fT = 42 GHz @ 3 V, 30 mA
NFmin = 0.85 dB @ 3.5 GHz, 3 V, 6 mA
Maximum power gain Gma = 18 dB @ 3.5 GHz, 3 V, 25 mA
Low power consumption, ideal for mobile applications
Very common as GPS low noise amplifier, see respective
application notes on Infineon internet page
Easy to use Pb-free (RoHS compliant) and halogen-free
standard package with visible leads
Qualification report according to AEC-Q101 available
3
2
4
1
Applications
As Low Noise Amplifier (LNA) in
•
•
•
•
•
Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and
C-band LNB
Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5/5.5 GHz, UWB,
Bluetooth
Multimedia applications such as mobile/portable TV, CATV, FM Radio
3G/4G UMTS/LTE mobile phone applications
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
Package
BFP640
SOT343
Data Sheet
Pin Configuration
1=B
2=E
8
3=C
Marking
4=E
R4s
Revision 2.0, 2015-03-13
BFP640
Maximum Ratings
3
Maximum Ratings
Table 3-1
Maximum Ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Collector emitter voltage
Values
Min.
Max.
–
–
4.1
3.6
Unit
V
VCEO
Note / Test Condition
Open base
TA = 25 °C
TA = -55 °C
Collector emitter voltage
VCES
–
13
V
E-B short circuited
Collector base voltage
VCBO
–
13
V
Open emitter
Emitter base voltage
VEBO
–
1.2
V
Open collector
Collector current
IC
–
50
mA
–
IB
–
3
mA
–
Ptot
–
200
mW
TS ≤ 90 °C
Junction temperature
TJ
–
150
°C
–
Storage temperature
TStg
-55
150
°C
–
Base current
Total power dissipation
1)
1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Data Sheet
9
Revision 2.0, 2015-03-13
BFP640
Thermal Characteristics
4
Thermal Characteristics
Table 4-1
Thermal Resistance
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
1)
Junction - soldering point
RthJS
–
–
300
K/W
–
1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
240
200
Ptot [mW]
160
120
80
40
0
0
25
50
75
T [°C]
S
100
125
150
Figure 4-1 Total Power Dissipation Ptot = f (TS)
Data Sheet
10
Revision 2.0, 2015-03-13
BFP640
Electrical Characteristics
5
Electrical Characteristics
5.1
DC Characteristics
Table 5-1
DC Characteristics at TA = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage
V(BR)CEO
Values
Min.
Typ.
Max.
4.1
4.7
–
Unit
Note / Test Condition
V
IC = 1 mA, IB = 0
Open base
Collector emitter leakage current
ICES
–
1)
1
1
400
401)
1
40
1)
1)
nA
VCE = 13 V, VBE = 0
VCE = 5 V, VBE = 0
E-B short circuited
Collector base leakage current
ICBO
–
nA
VCB = 5V, IE = 0
Open emitter
Emitter base leakage current
IEBO
–
1
40
DC current gain
hFE
110
180
270
nA
VEB = 0.5V, IC = 0
Open collector
VCE = 3 V, IC = 30 mA
Pulse measured
1) Maximum values not limited by the device but by the short cycle time of the 100% test
5.2
General AC Characteristics
Table 5-2
General AC Characteristics at TA = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Transition frequency
fT
–
42
–
GHz
VCE = 3 V, IC = 30 mA
f = 2 GHz
Collector base capacitance
CCB
–
0.08
–
pF
VCB = 3 V, VBE = 0
f = 1 MHz
Emitter grounded
Collector emitter capacitance
CCE
–
0.24
–
pF
VCE = 3 V, VBE = 0
f = 1 MHz
Base grounded
Emitter base capacitance
CEB
–
0.51
–
pF
VEB = 0.5 V,VCB = 0
f = 1 MHz
Collector grounded
Data Sheet
11
Revision 2.0, 2015-03-13
BFP640
Electrical Characteristics
5.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T´s in a 50 Ω system, TA = 25 °C
VC
Top View
Bias -T
OUT
E
C
B
E
VB
Bias-T
(Pin 1)
IN
Figure 5-1 BFP640 Testing Circuit
Data Sheet
12
Revision 2.0, 2015-03-13
BFP640
Electrical Characteristics
Table 5-3
AC Characteristics, VCE = 3 V, f = 0.45 GHz
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
33
31.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.55
26
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
10.5
23.5
–
–
Table 5-4
dB
Symbol
Values
Min.
Typ.
Max.
IC = 6 mA
IC = 6 mA
dBm
ZS = ZL = 50 Ω
IC = 25 mA
IC = 25 mA
Unit
Note / Test Condition
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
29
27.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.6
24
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
12
25.5
–
–
IC = 25 mA
IC = 25 mA
dB
IC = 6 mA
IC = 6 mA
dBm
ZS = ZL = 50 Ω
IC = 25 mA
IC = 25 mA
Unit
Note / Test Condition
AC Characteristics, VCE = 3 V, f = 1.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
25.5
23.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.6
21
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
Data Sheet
IC = 25 mA
IC = 25 mA
AC Characteristics, VCE = 3 V, f = 0.9 GHz
Parameter
Table 5-5
Note / Test Condition
IC = 25 mA
IC = 25 mA
dB
IC = 6 mA
IC = 6 mA
dBm
OP1dB
OIP3
–
–
11.5
25.5
13
–
–
ZS = ZL = 50 Ω
IC = 25 mA
IC = 25 mA
Revision 2.0, 2015-03-13
BFP640
Electrical Characteristics
Table 5-6
AC Characteristics, VCE = 3 V, f = 1.9 GHz
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
24
21.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.65
19.5
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
12.5
26.5
–
–
Table 5-7
dB
Symbol
Values
Min.
Typ.
Max.
IC = 6 mA
IC = 6 mA
dBm
ZS = ZL = 50 Ω
IC = 25 mA
IC = 25 mA
Unit
Note / Test Condition
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
22
19.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.7
18
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
12
27.5
–
–
IC = 25 mA
IC = 25 mA
dB
IC = 6 mA
IC = 6 mA
dBm
ZS = ZL = 50 Ω
IC = 25 mA
IC = 25 mA
Unit
Note / Test Condition
AC Characteristics, VCE = 3 V, f = 3.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
–
–
18
16.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.85
15
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
Data Sheet
IC = 25 mA
IC = 25 mA
AC Characteristics, VCE = 3 V, f = 2.4 GHz
Parameter
Table 5-8
Note / Test Condition
IC = 25 mA
IC = 25 mA
dB
IC = 6 mA
IC = 6 mA
dBm
OP1dB
OIP3
–
–
12
27.5
14
–
–
ZS = ZL = 50 Ω
IC = 25 mA
IC = 25 mA
Revision 2.0, 2015-03-13
BFP640
Electrical Characteristics
Table 5-9
AC Characteristics, VCE = 3 V, f = 5.5 GHz
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Note / Test Condition
dB
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
–
–
14
12.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
1.1
12
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
12.5
27.5
–
–
IC = 25 mA
IC = 25 mA
dB
IC = 6 mA
IC = 6 mA
dBm
ZS = ZL = 50 Ω
IC = 25 mA
IC = 25 mA
Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
15
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BFP640
Electrical Characteristics
5.4
Characteristic DC Diagrams
30
160µA
140µA
25
120µA
100µA
IC [mA]
20
80µA
15
60µA
40µA
10
20µA
5
0
0
0.5
1
1.5
2
2.5
3
VCE [V]
3.5
4
4.5
5
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA
3
hFE
10
2
10
0
10
1
10
I [mA]
2
10
c
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V
Data Sheet
16
Revision 2.0, 2015-03-13
BFP640
Electrical Characteristics
2
10
1
10
0
IC [mA]
10
−1
10
−2
10
−3
10
−4
10
0.5
0.55
0.6
0.65
0.7
0.75
VBE [V]
0.8
0.85
0.9
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2 V
0
10
−1
10
−2
10
IB [mA]
−3
10
−4
10
−5
10
−6
10
−7
10
0.5
0.55
0.6
0.65
0.7
0.75
VBE [V]
0.8
0.85
0.9
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
Data Sheet
17
Revision 2.0, 2015-03-13
BFP640
Electrical Characteristics
−9
10
−10
IB [A]
10
−11
10
−12
10
−13
10
0.6
0.7
0.8
0.9
VEB [V]
1
1.1
1.2
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V
Data Sheet
18
Revision 2.0, 2015-03-13
BFP640
Electrical Characteristics
5.5
Characteristic AC Diagrams
Measurement setup is a test fixture with Bias T´s in a 50 Ω system, TA = 25 °C.
45
40
4.00V
3.50V
35
3.00V
fT [GHz]
30
25
2.50V
20
15
2.00V
10
5
0
1.00V
0
10
20
30
I [mA]
40
50
60
C
Figure 5-7 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter in V
30
25
OIP3 [dBm]
20
15
10
2V, 1500MHz
3V, 1500MHz
2V, 2400MHz
3V, 2400MHz
5
0
0
5
10
15
20
I [mA]
C
25
30
35
40
Figure 5-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, Parameters: VCE in V, f in MHz
Data Sheet
19
Revision 2.0, 2015-03-13
BFP640
28
27
26
25
30
8
19
110
12
1143
15
17
18
20 19
21
22
2
24 3
Electrical Characteristics
IC [mA]
28
27
26
25
20
15
17 16
18
20 19
21
22
23
24
25
15
23
22
5
21
20
19
18
17
10
16
1
20 21
19
18
2
1.5
25
24
19
2.5
VCE [V]
25
24
23
22
27
26
3
22 23
20 21
19
3.5
4
11
10
9
8
6
7
5
13
12
−2
30
0
1
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 2.4 GHz
25
12
4
2
3
11
11
10
8
6
7
5
IC [mA]
9
20
10
9
15
5
10 4
3
2
1
0
−1
5
1
9
8
1.5
8
7
6
7
6
4
3
2
1
0
−1
2
6
5
2.5
VCE [V]
4
3
2
1
0
−1
3
5
3
2
3.5
4
Figure 5-10 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 2.4 GHz
Data Sheet
20
Revision 2.0, 2015-03-13
BFP640
Electrical Characteristics
0.2
CCB [pF]
0.16
0.12
0.08
0.04
0
0
0.5
1
1.5
2
V
CB
2.5
3
3.5
4
9
10
[V]
Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz
40
35
30
G
ms
G [dB]
25
20
Gma
15
|S |2
21
10
5
0
0
1
2
3
4
5
6
f [GHz]
7
8
Figure 5-12 Gain Gma,Gms, |S21|2 = f (f), VCE = 3 V, IC = 25 mA
Data Sheet
21
Revision 2.0, 2015-03-13
BFP640
Electrical Characteristics
45
40
0.15GHz
35
0.45GHz
Gmax [dB]
30
0.90GHz
1.50GHz
1.90GHz
2.40GHz
25
20
3.50GHz
15
5.50GHz
10
10.00GHz
5
0
0
10
20
30
I [mA]
40
50
60
C
Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
40
0.15GHz
35
0.45GHz
30
0.90GHz
1.50GHz
1.90GHz
2.40GHz
Gmax [dB]
25
20
3.50GHz
15
5.50GHz
10
10.00GHz
5
0
0
0.5
1
1.5
2
V
2.5
3
[V]
3.5
4
4.5
5
CE
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 25 mA, f = Parameter in GHz
Data Sheet
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BFP640
Electrical Characteristics
1
1.5
0.5
2
0.4
10.0
9.0
8.0
0.3
7.0
3
10.0
9.0
8.0
6.0
4
7.0
6.0
0.2
5.0
5
5.0
0.03 to 10 GHz
4.0
0.1
4.0
0.1
0
10
3.0
0.2 0.3 0.4 0.5
1
1.5
2
3
2.0
4 5
0.03
0.03
3.0
−0.1
−10
1.0
−0.2
−5
2.0
−4
−0.3
−3
1.0
−0.4
−0.5
−2
−1.5
6.0mA
−1
25mA
Figure 5-15 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 25 mA
1
1.5
0.5
2
0.4
3
0.3
4
0.45 to 10 GHz
0.2
0.1
3.5 2.4 1.9 1.5
4.5
0.1
0
0.2 0.3 0.4 0.5
1
5.5
−0.1
7.0
0.5
0.9
1.5
1.9
2.4
3.5
4.5
5.5
7.0
−0.2
1.5
2
5
10
0.9
0.45
3
4 5
−10
8.0
9.0
−5
10.0
8.0
−4
9.0
−0.3
10.0
−3
−0.4
−0.5
−2
−1.5
−1
6mA
25mA
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 25 mA
Data Sheet
23
Revision 2.0, 2015-03-13
BFP640
Electrical Characteristics
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
10.0
0.03 to 10 GHz
10.0
0.1
0.1
0
0.2 0.3 0.4 0.5
9.0
8.0 1
7.0
6.0
7.0
6.01.5
5.0
4.0
3.0
5.0
−0.1
10
8.0
9.0
2
3
4 5
0.03
2.0
0.03
−10
4.0
3.0
1.0
−0.2
−5
2.0
−4
1.0
−0.3
−3
−0.4
−0.5
−2
−1.5
−1
6.0mA
25mA
Figure 5-17 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 25 mA
2
1.8
1.6
NFmin [dB]
1.4
1.2
1
0.8
I = 25mA
C
0.6
I = 6.0mA
C
0.4
0.2
0
0
1
2
3
4
5
6
f [GHz]
7
8
9
10
Figure 5-18 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 25 mA, ZS = Zopt
Data Sheet
24
Revision 2.0, 2015-03-13
BFP640
Electrical Characteristics
3
f = 10GHz
f = 5.5GHz
2.5
f = 3.5GHz
f = 2.4GHz
NFmin [dB]
2
1.5
1
f = 1.9GHz
f = 1.5GHz
0.5
f = 0.9GHz
f = 0.45GHz
0
0
5
10
15
20
25
IC [mA]
30
35
40
45
Figure 5-19 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
3.5
3
f = 10GHz
f = 5.5GHz
NF50 [dB]
2.5
f = 3.5GHz
f = 2.4GHz
2
1.5
1
f = 1.9GHz
f = 1.5GHz
0.5
f = 0.9GHz
f = 0.45GHz
0
0
5
10
15
20
25
IC [mA]
30
35
40
45
Figure 5-20 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves.
Data Sheet
25
Revision 2.0, 2015-03-13
BFP640
Simulation Data
6
Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website. Please consult our website and download the latest versions before actually starting
your design.
You find the BFP640 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these
circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is
ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin
configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP640 SPICE
GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP
model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
Data Sheet
26
Revision 2.0, 2015-03-13
BFP640
Package Information SOT343
7
Package Information SOT343
0.9 ±0.1
2 ±0.2
0.1 MAX.
1.3
0.1
A
1
2
0.1 MIN.
0.15
1.25 ±0.1
3
2.1 ±0.1
4
0.3 +0.1
-0.05
4x
0.1 M
+0.1
0.15 -0.05
+0.1
0.6 -0.05
0.2 M A
SOT343-PO V08
Figure 7-1 Package Outline
1.6
0.8
0.6
1.15
0.9
SOT343-FP V08
Figure 7-2 Package Footprint
Date code (YM)
2005, June
56
Type code
XYs
Manufacturer
Pin 1
Figure 7-3 Marking Description (Marking BFP640: R4s)
0.2
2.3
8
4
Pin 1
2.15
1.1
SOT323-TP V02
Figure 7-4 Tape Dimensions
Data Sheet
27
Revision 2.0, 2015-03-13
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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