BFR843EL3 Data Sheet (1.5 MB)

BFR843EL3
Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor
Data Sheet
Revision 1.0, 2014-08-05
RF & Protection Devices
Edition 2014-08-05
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFR843EL3
BFR843EL3, Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor
Revision History: 2014-08-05, Revision 1.0
Page
Subjects (major changes since last revision)
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Data Sheet
3
Revision 1.0, 2014-08-05
BFR843EL3
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
5.1
5.2
5.3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
7
Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
8
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
9
Package Information TSLP-3-10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Data Sheet
4
11
11
11
12
Revision 1.0, 2014-08-05
BFR843EL3
List of Figures
List of Figures
Figure 4-1
Figure 5-1
Figure 6-1
Figure 6-2
Figure 6-3
Figure 6-4
Figure 6-5
Figure 7-1
Figure 7-2
Figure 7-3
Figure 7-4
Figure 7-5
Figure 7-6
Figure 7-7
Figure 7-8
Figure 7-9
Figure 7-10
Figure 7-11
Figure 7-12
Figure 9-1
Figure 9-2
Figure 9-3
Figure 9-4
Data Sheet
Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BFR843EL3 Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . .
DC Current Gain hFE = f (IC), VCE = 1.8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V . . . . . . . . . . . . . . . . . . .
3rd Order Intercept Point at Output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters . . . . . . . .
3rd Order Intercept Point at Output OIP3 [dBm] =f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . .
Compression Point at Output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . . . . .
Gain Gma, Gms, IS21I² = f (f), VCE = 1.8 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (IC), VCE = 1.8 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . .
Input Reflection Coefficient S11 = f (f), VCE = 1.8 V, IC = 8 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . .
Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 1.8 V, IC = 8 / 15 mA . . . . . . . . .
Output Reflection Coefficient S22 = f (f), VCE = 1.8 V, IC = 8 / 15 mA . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f (f), VCE = 1.8 V, IC = 8 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f (IC), VCE = 1.8 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . .
Noise Figure NF50 = f (IC), VCE = 1.8 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . .
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Marking Description (Marking BFR843EL3: T2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
10
12
16
16
17
17
18
19
19
20
20
21
21
22
22
23
23
24
24
26
26
26
26
Revision 1.0, 2014-08-05
BFR843EL3
List of Tables
List of Tables
Table 3-1
Table 4-1
Table 5-1
Table 5-2
Table 5-3
Table 5-4
Table 5-5
Table 5-6
Table 5-7
Table 5-8
Table 5-9
Table 5-10
Data Sheet
Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
AC Characteristics, VCE = 1.8 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
AC Characteristics, VCE = 1.8 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
AC Characteristics, VCE = 1.8 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 1.8 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 1.8 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 1.8 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 1.8 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 1.8 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6
Revision 1.0, 2014-08-05
BFR843EL3
Product Brief
1
Product Brief
The BFR843EL3 is a low noise broadband NPN bipolar RF transistor. Its integrated feedback provides a
broadband pre-match to 50 Ω at input and output and improves the stability against parasitic oscillations. These
measures simplify the design of arbitrary LNA application circuits. The device is based on Infineon’s reliable high
volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports
voltages up to VCEO = 2.25 V and currents up to IC = 55 mA. The device is especially suited for mobile applications
in which low power consumption is a key requirement. The transistor is fitted with internal protection circuits, which
enhance the robustness against electrostatic discharge (ESD) and against high levels of RF input power. The
device is housed in a very small thin leadless plastic package, ideal for modules.
Data Sheet
7
Revision 1.0, 2014-08-05
BFR843EL3
Features
2
•
•
•
•
•
•
•
•
•
Features
Low noise broadband NPN RF transistor based on
Infineon´s reliable, high volume SiGe:C bipolar technology
High maximum RF input power and ESD robustness
Unique combination of high RF performance, robustness
and ease of application circuit design
Low noise figure: NFmin = 1 dB at 2.4 GHz
and 1.15 dB at 5.5 GHz, 1.8 V, 8 mA
High gain |S21|2 = 22 dB at 2.4 GHz
and 16.5 dB at 5.5 GHz, 1.8 V, 15 mA
OIP3 = 22 dBm at 2.4 GHz and 5.5 GHz, 1.8 V, 25 mA
Ideal for low voltage applications e.g. VCC = 1.2 V
and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding
collector resistor)
Low power consumption, ideal for mobile applications
Pb-free (RoHS compliant) and halogen-free very small
thin leadless plastic package
Applications
As Low Noise Amplifier (LNA) in
•
•
•
•
•
Wireless Communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE
or WiMAX LNA
Satellite navigation systems (e.g. GPS, GLONASS, COMPASS...) and satellite C-band LNB (1st and 2nd stage
LNA)
Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz
ISM bands up to 10 GHz
Dedicated short range communication (DSRC) systems: WLAN IEEE802.11p
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
Package
BFR843EL3
TSLP-3-10
Data Sheet
Pin Configuration
1=B
2=C
8
3=E
Marking
T2
Revision 1.0, 2014-08-05
BFR843EL3
Maximum Ratings
3
Maximum Ratings
Table 3-1
Maximum Ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Collector emitter voltage
VCEO
Values
Min.
Max.
–
2.25
2.0
Unit
Note / Test Condition
V
TA = 25 °C
TA = -55 °C
Open base
1)
Collector emitter voltage
VCES
–
2.25
2.0
V
TA = 25 °C
TA = -55 °C
E-B short circuited
2)
Collector base voltage
VCBO
–
2.9
2.6
V
TA = 25 °C
TA = -55 °C
Open emitter
Base current
IB
-1
5
mA
Collector current
IC
–
55
mA
RF input power
PRFin
–
20
dBm
f = 1.9 GHz, matched to
50 Ω
ESD stress pulse
VESD
-1
+1
kV
HBM, all pins, acc. to
JESD22-A114
Total power dissipation3)
Ptot
–
125
mW
TS ≤ 103 °C
Junction temperature
TJ
–
150
°C
Storage temperature
TStg
-55
150
°C
1) VCES is identical to VCEO due to design
2) VCBO is similar to VCEO due to design
3) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Data Sheet
9
Revision 1.0, 2014-08-05
BFR843EL3
Thermal Characteristics
4
Thermal Characteristics
Table 4-1
Thermal Resistance
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
1)
Junction - soldering point
RthJS
–
375
–
K/W
–
1) For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation).
130
120
110
100
90
Ptot [mW]
80
70
60
50
40
30
20
10
0
0
25
50
75
T [°C]
100
125
150
S
Figure 4-1 Total Power Dissipation Ptot = f (Ts)
Data Sheet
10
Revision 1.0, 2014-08-05
BFR843EL3
Electrical Characteristics
5
Electrical Characteristics
5.1
DC Characteristics
Table 5-1
DC Characteristics at TA = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Collector emitter breakdown voltage
V(BR)CEO
2.25
2.6
Collector emitter leakage current
ICES
–
–
Unit
Note / Test Condition
V
IC = 1 mA, IB = 0
Open base
nA
VCE = 1.5 V, VBE = 0
Max.
400
E-B short circuited
Collector base leakage current
ICBO
–
–
400
nA
VCB = 1.5 V, IE = 0
Open emitter
Emitter base leakage current
IEBO
–
–
10
DC current gain
hFE
230
–
360
260
580
–
μA
VEB = 0.5 V, IC = 0
Open collector
VCE = 1.8 V, IC = 1 mA
VCE = 1.8 V, IC = 15 mA
Pulse measured
5.2
General AC Characteristics
Table 5-2
General AC Characteristics at TA = 25 °C
Parameter
Collector base capacitance1)
Symbol
CCB
Values
Min.
Typ.
Max.
–
5.26
0.07
–
Unit
Note / Test Condition
pF
f = 1 MHz
f = 1 GHz
VCB = 1.8 V, VBE = 0
Emitter grounded
Collector emitter capacitance
CCE
–
0.42
–
pF
f = 1 MHz
VCE = 1.8 V, VBE= 0
Base grounded
Emitter base capacitance
CEB
–
0.66
–
pF
f = 1 MHz
VEB = 0.4 V,VCB = 0
Collector grounded
1) Including integrated feedback capacitance
Data Sheet
11
Revision 1.0, 2014-08-05
BFR843EL3
Electrical Characteristics
5.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
3
VB
VC
Bias-T
Bias -T
GND
In
1
RFIn
RFOut
Out
2
Figure 5-1 BFR843EL3 Testing Circuit
Table 5-3
AC Characteristics, VCE = 1.8 V, f = 450 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
25.5
24.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.95
22.5
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
7.5
23
–
–
Table 5-4
dB
IC = 15 mA
IC = 15 mA
dB
IC = 8 mA
IC = 8 mA
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Unit
Note / Test Condition
AC Characteristics, VCE = 1.8 V, f = 900 MHz
Parameter
Power Gain
Maximum power gain
Transducer gain
Data Sheet
Note / Test Condition
Symbol
Values
Min.
Typ.
Max.
–
–
25
24
–
–
dB
Gms
|S21|2
12
IC = 15 mA
IC = 15 mA
Revision 1.0, 2014-08-05
BFR843EL3
Electrical Characteristics
Table 5-4
AC Characteristics, VCE = 1.8 V, f = 900 MHz (cont’d)
Parameter
Symbol
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
Table 5-5
Values
Unit
Min.
Typ.
Max.
–
–
0.95
22
–
–
dB
NFmin
Gass
OP1dB
OIP3
–
–
7
21.5
Symbol
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Unit
Note / Test Condition
–
–
Values
Min.
Typ.
Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
24.5
23
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.95
21.5
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
7
21.5
–
–
dB
IC = 15 mA
IC = 15 mA
dB
IC = 8 mA
IC = 8 mA
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Unit
Note / Test Condition
AC Characteristics, VCE = 1.8 V, f = 1.9 GHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
24.5
22.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
1
21
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
Data Sheet
IC = 8 mA
IC = 8 mA
AC Characteristics, VCE = 1.8 V, f = 1.5 GHz
Parameter
Table 5-6
Note / Test Condition
dB
IC = 15 mA
IC = 15 mA
dB
IC = 8 mA
IC = 8 mA
dBm
OP1dB
OIP3
–
–
7
21
13
–
–
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Revision 1.0, 2014-08-05
BFR843EL3
Electrical Characteristics
Table 5-7
AC Characteristics, VCE = 1.8 V, f = 2.4 GHz
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
24
22
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
1
20
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
6
20.5
–
–
Table 5-8
dB
dB
Symbol
Values
Min.
Typ.
Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
23
19.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
1.05
18.5
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
6
20.5
–
–
IC = 8 mA
IC = 8 mA
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Unit
Note / Test Condition
dB
IC = 15 mA
IC = 15 mA
dB
IC = 8 mA
IC = 8 mA
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Unit
Note / Test Condition
AC Characteristics, VCE = 1.8 V, f = 5.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
21.5
16.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
1.15
15.5
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
Data Sheet
IC = 15 mA
IC = 15 mA
AC Characteristics, VCE = 1.8 V, f = 3.5 GHz
Parameter
Table 5-9
Note / Test Condition
dB
IC = 15 mA
IC = 15 mA
dB
IC = 8 mA
IC = 8 mA
dBm
OP1dB
OIP3
–
–
4.5
20.5
14
–
–
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Revision 1.0, 2014-08-05
BFR843EL3
Electrical Characteristics
Table 5-10 AC Characteristics, VCE = 1.8 V, f = 10 GHz
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
14.5
10.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
1.35
10.5
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
1.5
17
–
–
Note / Test Condition
dB
IC = 15 mA
IC = 15 mA
dB
IC = 8 mA
IC = 8 mA
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
15
Revision 1.0, 2014-08-05
BFR843EL3
Characteristic DC Diagrams
6
Characteristic DC Diagrams
22
20
90µA
18
80µA
16
70µA
60µA
IC [mA]
14
50µA
12
40µA
10
30µA
8
6
20µA
4
10µA
2
0
0
0.5
1
1.5
2
2.5
VCE [V]
Figure 6-1 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter
3
hFE
10
2
10
−2
10
−1
10
0
10
Ic [mA]
1
10
2
10
Figure 6-2 DC Current Gain hFE = f (IC), VCE = 1.8 V
Data Sheet
16
Revision 1.0, 2014-08-05
BFR843EL3
Characteristic DC Diagrams
2
10
1
10
0
10
IC [mA]
−1
10
−2
10
−3
10
−4
10
−5
10
0.5
0.55
0.6
0.65
0.7
0.75
VBE [V]
0.8
0.85
0.9
Figure 6-3 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V
0
10
−1
10
−2
10
IB [mA]
−3
10
−4
10
−5
10
−6
10
−7
10
0.5
0.55
0.6
0.65
0.7
0.75
VBE [V]
0.8
0.85
0.9
Figure 6-4 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V
Data Sheet
17
Revision 1.0, 2014-08-05
BFR843EL3
Characteristic DC Diagrams
−6
10
−7
10
−8
IB [A]
10
−9
10
−10
10
−11
10
0.3
0.35
0.4
0.45
0.5
0.55
VEB [V]
0.6
0.65
0.7
Figure 6-5 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V
Data Sheet
18
Revision 1.0, 2014-08-05
BFR843EL3
Characteristic AC Diagrams
7
Characteristic AC Diagrams
24
22
20
18
OIP3 [dBm]
16
1.5V, 2400MHz
1.8V, 2400MHz
1.5V, 5500MHz
1.8V, 5500MHz
14
12
10
8
6
4
2
0
0
5
10
15
20
I [mA]
C
25
30
35
Figure 7-1 3rd Order Intercept Point at Output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters
7 8
7
16
7
1
9 10 11 2 3
1 1 14
30
15 16
17
9 10 11 12 13 14
22
18
21
15
10
19
20
IC [mA]
15 16
17
16
5 15
1
22
21
20
19
17
19 20
21
22
19 20
21
18
25
20
18
23
35
18
20
19
17
1.2
16
15
1.4
18
17
16
15
1.6
18
17
1.8
19
2
VCE [V]
Figure 7-2 3rd Order Intercept Point at Output OIP3 [dBm] =f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
Data Sheet
19
Revision 1.0, 2014-08-05
BFR843EL3
Characteristic AC Diagrams
35
5
6
7
4
2
3
5
6
2
20 3
4
5
15
−1
2
1
0
−1
−2
−3
−4
−5
1.2
1
6
5
4
5
4
3
2
10
7
6
4
3
5
4
7
IC [mA]
2
3
−1
0
1
−4
−3
30
−2
−1
0
25 1
1
0
−4
−5
1.4
−1
−2
−3
3
2
−3
−4
1.6
1
0
−2
1.8
2
VCE [V]
Figure 7-3 Compression Point at Output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
30
28
26
G
ms
24
G [dB]
22
20
G
ma
18
|S |2
21
16
14
12
10
8
0
1
2
3
4
5
6
7
f [GHz]
8
9
10
11
12
Figure 7-4 Gain Gma, Gms, IS21I² = f (f), VCE = 1.8 V, IC = 15 mA
Data Sheet
20
Revision 1.0, 2014-08-05
BFR843EL3
Characteristic AC Diagrams
30
28
Gmax [dB]
26
24
22
20
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
18
16
3.50GHz
14
12
5.50GHz
10
8
6
10.00GHz
12.00GHz
4
2
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
IC [mA]
Figure 7-5 Maximum Power Gain Gmax = f (IC), VCE = 1.8 V, f = Parameter in GHz
30
28
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
26
24
Gmax [dB]
22
20
18
16
10.00GHz
14
12.00GHz
12
10
8
0
0.5
1
1.5
2
2.5
VCE [V]
Figure 7-6 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz
Data Sheet
21
Revision 1.0, 2014-08-05
BFR843EL3
Characteristic AC Diagrams
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
0.1
0.1
0
−0.1
12.0
11.0
10.0
12.0
9.0
11.0
8.0 0.5
0.210.00.3 0.4
7.0
9.0
6.0
8.0
5.0
4.0
7.0
3.0 2.0
6.0
0.03 to 12 GHz
10
1
1.5
1.0
2
3
4 5
−10
1.0
0.03
5.0
0.03
4.0
−0.2
2.0
3.0
−5
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
8mA
15mA
−1
Figure 7-7 Input Reflection Coefficient S11 = f (f), VCE = 1.8 V, IC = 8 / 15 mA
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
0.45 to 10 GHz
0.1
5.5
8.0
0.1
0
0.2 0.3 0.4 0.5
10.0
3.5 2.4
1.9
1.5
5.5 3.5 1 0.45
0.9
1.50.45 2
10
3
4 5
8.0
10.0
−0.1
−10
−0.2
−5
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
−1
8mA
15mA
Figure 7-8 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 1.8 V, IC = 8 / 15 mA
Data Sheet
22
Revision 1.0, 2014-08-05
BFR843EL3
Characteristic AC Diagrams
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
0.03 to 12 GHz
0.1
0.1
0
−0.1
12.0
12.0
11.0
11.0
10.0
0.2
10.00.3 0.49.00.5
8.0
9.0
7.0
8.0
6.0
5.0
7.0
4.0
3.0
6.0
10
1
2.0
1.5
3
4 5
1.0
−10
1.0
5.0
−0.2
2
0.03
0.03
4.0
−5
2.0
3.0
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
8mA
15mA
−1
Figure 7-9 Output Reflection Coefficient S22 = f (f), VCE = 1.8 V, IC = 8 / 15 mA
1.6
1.5
1.4
NFmin [dB]
1.3
1.2
1.1
1
IC = 15mA
0.9
0.8
IC = 8mA
0.7
0.6
0
1
2
3
4
5
6
f [GHz]
7
8
9
10
Figure 7-10 Noise Figure NFmin = f (f), VCE = 1.8 V, IC = 8 / 15 mA, ZS = Zopt
Data Sheet
23
Revision 1.0, 2014-08-05
BFR843EL3
Characteristic AC Diagrams
3
2.8
f = 10GHz
2.6
2.4
f = 5.5GHz
2.2
f = 3.5GHz
NFmin [dB]
2
f = 2.4GHz
1.8
f = 0.9GHz
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
IC [mA]
Figure 7-11 Noise Figure NFmin = f (IC), VCE = 1.8 V, ZS = Zopt, f = Parameter in GHz
4
f = 10GHz
3.5
f = 5.5GHz
3
f = 3.5GHz
f = 2.4GHz
NF50 [dB]
2.5
f = 0.9GHz
2
1.5
1
0.5
0
0
5
10
15
20
25
IC [mA]
Figure 7-12 Noise Figure NF50 = f (IC), VCE = 1.8 V, ZS = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA = 25 °C.
Data Sheet
24
Revision 1.0, 2014-08-05
BFR843EL3
Simulation Data
8
Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website. Please consult our website and download the latest versions before actually starting
your design.
You find the BFR843EL3 SPICE GP model in the internet in MWO- and ADS-format, which you can import into
these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the
pin configuration of the device.
The model parameters have been extracted and verified up to 12 GHz using typical devices. The BFR843EL3
SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE
GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
Data Sheet
25
Revision 1.0, 2014-08-05
BFR843EL3
Package Information TSLP-3-10
Package Information TSLP-3-10
0.02 MAX.
A
0.575
0.25
0.5 ±0.035
0.1 A
3
B
0.1 B
2
1
0.35
Pin 1
marking
0.15 ±0.035
2x
1±0.05
0.6 ±0.05
0.32 MAX.
0.1 B
Bottom view
0.4 ±0.035
Top view
0.25 ±0.035
2x
9
0.1 A
TSLP-3-10-PO V01
0.225
0.2
0.2
0.17
0.225
0.15
Copper
Solder mask
0.255
0.5
0.95
0.2
0.35
1
0.45
R0.19
0.315
0.6
0.38
Figure 9-1 Package Outline
R0.1
Stencil apertures
TSLP-3-10-FP V01
Figure 9-2 Package Footprint
Figure 9-3 Marking Description (Marking BFR843EL3: T2)
0.35
1.2
Pin 1
marking
8
4
0.8
TSLP-3-10-TP V01
Figure 9-4 Tape dimensions
Data Sheet
26
Revision 1.0, 2014-08-05
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
Similar pages