BFP840ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-03-28 RF & Protection Devices Edition 2013-03-28 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFP840ESD BFP840ESD, Robust Low Noise Silicon Germanium Bipolar RF Transistor Revision History: 2013-03-28, Revision 1.2 Page Subjects (major changes since last revision) This data sheet replaces the revision from 2012-07-11. P. 8 Item about AEC-Q101 added to feature list, minor changes. P. 27 Picture for marking description updated. Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 1.2, 2013-03-28 BFP840ESD Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 5.1 5.2 5.3 5.4 5.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 7 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Data Sheet 4 11 11 11 12 16 19 Revision 1.2, 2013-03-28 BFP840ESD List of Figures List of Figures Figure 4-1 Figure 5-1 Figure 5-2 Figure 5-3 Figure 5-4 Figure 5-5 Figure 5-6 Figure 5-7 Figure 5-8 Figure 5-9 Figure 5-10 Figure 5-11 Figure 5-12 Figure 5-13 Figure 5-14 Figure 5-15 Figure 5-16 Figure 5-17 Figure 5-18 Figure 5-19 Figure 5-20 Figure 7-1 Figure 7-2 Figure 7-3 Figure 7-4 Data Sheet Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFP840ESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . DC Current Gain hFE = f (IC), VCE = 1.8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V . . . . . . . . . . . . . . . . . . . Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters . . . . . . . . . 3rd Order Intercept Point at output OIP3 [dBm]= f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . Compression Point at output OP1dB [dBm]= f (IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz . . . . . . . . . . . Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gain Gma, Gms, IS21I² = f (f), VCE = 1.8 V, IC = 10 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (IC), VCE = 1.8 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (VCE), IC = 10 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Input Reflection Coefficient S11 = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA . . . . . . . . . . . . . . . . . . . . . Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA . . . . . . Output Reflection Coefficient S22 = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA. . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (IC), VCE = 1.8 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Noise Figure NF50 = f (IC), VCE = 1.8 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking Description (Marking BFP840ESD: T8s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 12 16 16 17 17 18 19 19 20 20 21 21 22 22 23 23 24 24 25 25 27 27 27 27 Revision 1.2, 2013-03-28 BFP840ESD List of Tables List of Tables Table 3-1 Table 4-1 Table 5-1 Table 5-2 Table 5-3 Table 5-4 Table 5-5 Table 5-6 Table 5-7 Table 5-8 Table 5-9 Table 5-10 Table 5-11 Data Sheet Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 AC Characteristics, VCE = 1.8 V, f = 0.45 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 1.8 V, f = 0.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 1.8 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 1.8 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 1.8 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 1.8 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 1.8 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 1.8 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 1.8 V, f = 12 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision 1.2, 2013-03-28 BFP840ESD Product Brief 1 Product Brief The BFP840ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz Wi-Fi applications. The device is based on Infineon´s reliable high volume SiGe:C technology. The BFP840ESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the Wi-Fi application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use industry standard package with visible leads. Data Sheet 7 Revision 1.2, 2013-03-28 BFP840ESD Features 2 • • • • • • • • • Features Robust very low noise amplifier based on Infineon´s reliable high volume SiGe:C technology Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness Very high transition frequency fT = 80 GHz enables very low noise figure at high frequencies: NFmin = 0.85 dB at 5.5 GHz, 1.8 V, 6 mA High gain |S21|2 = 18.5 dB at 5.5 GHz, 1.8 V, 10 mA OIP3 = 23 dBm at 5.5 GHz, 1.5 V, 6 mA Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor) Low power consumption, ideal for mobile applications Easy to use Pb free (RoHS compliant) and halogen free industry standard package with visible leads Qualification report according to AEC-Q101 available 3 2 4 1 SOT343 Applications As Low Noise Amplifier (LNA) in • • • • Mobile and fixed connectivity applications: WLAN 802.11, WiMAX and UWB Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass) and C-band LNB (1st and 2nd stage LNA) Ku-band LNB front-end (2nd stage or 3rd stage LNA and active mixer) Ka-band oscillators (DROs) Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package BFP840ESD SOT343 Data Sheet Pin Configuration 1=B 2=E 8 3=C Marking 4=E T8s Revision 1.2, 2013-03-28 BFP840ESD Maximum Ratings 3 Maximum Ratings Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Collector emitter voltage VCEO Values Min. Max. – 2.25 2.0 Unit Note / Test Condition V TA = 25 °C TA = -55 °C Open base 1) Collector emitter voltage VCES – 2.25 2.0 V TA = 25 °C TA = -55 °C E-B short circuited 2) Collector base voltage VCBO – 2.9 2.6 V TA = 25 °C TA = -55 °C Open emitter Base current IB -5 3 mA – Collector current IC – 35 mA – RF input power PRFin – 20 dBm – ESD stress pulse VESD -1.5 1.5 kV HBM, all pins, acc. to JESD22-A114 Total power dissipation3) Ptot – 75 mW TS ≤ 108 °C Junction temperature TJ – 150 °C – Storage temperature TStg -55 150 °C – 1) VCES is identical to VCEO due to design. 2) VCBO is similar to VCEO due to design. 3) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 9 Revision 1.2, 2013-03-28 BFP840ESD Thermal Characteristics 4 Thermal Characteristics Table 4-1 Thermal Resistance Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. 1) Junction - soldering point RthJS – 551 – K/W – 1) For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation). 80 70 60 Ptot [mW] 50 40 30 20 10 0 0 25 50 75 TS [°C] 100 125 150 Figure 4-1 Total Power Dissipation Ptot = f (Ts) Data Sheet 10 Revision 1.2, 2013-03-28 BFP840ESD Electrical Characteristics 5 Electrical Characteristics 5.1 DC Characteristics Table 5-1 DC Characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Collector emitter breakdown voltage V(BR)CEO 2.25 2.6 Collector emitter leakage current ICES – – Unit Note / Test Condition V IC = 1 mA, IB = 0 Open base nA VCE = 1.5 V, VBE = 0 Max. 400 E-B short circuited Collector base leakage current ICBO – – 400 nA VCB = 1.5 V, IE = 0 Open emitter Emitter base leakage current IEBO – – 10 DC current gain hFE 150 260 450 μA VEB = 0.5 V, IC = 0 Open collector VCE = 1.8 V, IC = 10 mA Pulse measured 5.2 General AC Characteristics Table 5-2 General AC Characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Transition frequency fT – 80 – GHz VCE = 1.8 V, IC = 25 mA f = 2 GHz Collector base capacitance CCB – 37 – fF VCB = 1.8 V, VBE = 0 f = 1 MHz Emitter grounded Collector emitter capacitance CCE – 0.40 – pF VCE = 1.8 V, VBE = 0 f = 1 MHz Base grounded Emitter base capacitance CEB – 0.41 – pF VEB = 0.4 V,VCB = 0 f = 1 MHz Collector grounded Data Sheet 11 Revision 1.2, 2013-03-28 BFP840ESD Electrical Characteristics 5.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C VC Top View Bias -T OUT E C B E VB Bias-T (Pin 1) IN Figure 5-1 BFP840ESD Testing Circuit Table 5-3 AC Characteristics, VCE = 1.8 V, f = 0.45 GHz Parameter Symbol Values Unit Min. Typ. Max. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 33.5 27.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.6 26.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output Data Sheet Note / Test Condition IC = 10 mA IC = 10 mA dB IC = 5 mA IC = 5 mA dBm OP1dB OIP3 – – 4 19.5 12 – – ZS = ZL = 50 Ω IC = 10 mA IC = 10 mA Revision 1.2, 2013-03-28 BFP840ESD Electrical Characteristics Table 5-4 AC Characteristics, VCE = 1.8 V, f = 0.9 GHz Parameter Symbol Values Unit Min. Typ. Max. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 30 27 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.6 25.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 4 19.5 – – Table 5-5 dB Symbol Values Min. Typ. Max. IC = 5 mA IC = 5 mA dBm ZS = ZL = 50 Ω IC = 10 mA IC = 10 mA Unit Note / Test Condition dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 28 25.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.65 24 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 4.0 19.5 – – IC = 10 mA IC = 10 mA dB IC = 5 mA IC = 5 mA dBm ZS = ZL = 50 Ω IC = 10 mA IC = 10 mA Unit Note / Test Condition AC Characteristics, VCE = 1.8 V, f = 1.9 GHz Parameter Symbol Values Min. Typ. Max. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 27 25 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.65 23 – – Linearity 1 dB compression point at output 3rd order intercept point at output Data Sheet IC = 10 mA IC = 10 mA AC Characteristics, VCE = 1.8 V, f = 1.5 GHz Parameter Table 5-6 Note / Test Condition IC = 10 mA IC = 10 mA dB IC = 5 mA IC = 5 mA dBm OP1dB OIP3 – – 4.5 21 13 – – ZS = ZL = 50 Ω IC = 10 mA IC = 10 mA Revision 1.2, 2013-03-28 BFP840ESD Electrical Characteristics Table 5-7 AC Characteristics, VCE = 1.8 V, f = 2.4 GHz Parameter Symbol Values Unit Min. Typ. Max. dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 26 24 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.7 22 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 4 21 – – Table 5-8 dB Symbol Values Min. Typ. Max. IC = 5 mA IC = 5 mA dBm ZS = ZL = 50 Ω IC = 10 mA IC = 10 mA Unit Note / Test Condition dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 24.5 22 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.7 20 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 5 22.5 – – IC = 10 mA IC = 10 mA dB IC = 5 mA IC = 5 mA dBm ZS = ZL = 50 Ω IC = 10 mA IC = 10 mA Unit Note / Test Condition AC Characteristics, VCE = 1.8 V, f = 5.5 GHz Parameter Symbol Values Min. Typ. Max. dB Power Gain Maximum power gain Transducer gain Gma |S21|2 – – 22.5 18.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.85 17 – – Linearity 1 dB compression point at output 3rd order intercept point at output Data Sheet IC = 10 mA IC = 10 mA AC Characteristics, VCE = 1.8 V, f = 3.5 GHz Parameter Table 5-9 Note / Test Condition IC = 10 mA IC = 10 mA dB IC = 5 mA IC = 5 mA dBm OP1dB OIP3 – – 5 22 14 – – ZS = ZL = 50 Ω IC = 10 mA IC = 10 mA Revision 1.2, 2013-03-28 BFP840ESD Electrical Characteristics Table 5-10 AC Characteristics, VCE = 1.8 V, f = 10 GHz Parameter Symbol Values Unit Min. Typ. Max. Note / Test Condition dB Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 17 12 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 1.2 12.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 2.5 19.5 – – IC = 10 mA IC = 10 mA dB IC = 5 mA IC = 5 mA dBm ZS = ZL = 50 Ω IC = 10 mA IC = 10 mA Table 5-11 AC Characteristics, VCE = 1.8 V, f = 12 GHz Parameter Symbol Values Min. Typ. Unit Max. dB Power gain Maximum power gain Transducer gain Note / Test Condition Gms |S21| 2 – 15.5 – IC = 10 mA – 9.5 – IC = 10 mA dB Minimum Noise Figure Minimum noise figure NFmin – 1.45 – IC = 5 mA Associated gain Gass – 11 – IC = 5 mA dBm Linearity ZS = ZL = 50 Ω 1 dB compression point at output OP1dB – 1.5 – IC = 10 mA 3rd order intercept point at output OIP3 – 18.5 – IC = 10 mA Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. Data Sheet 15 Revision 1.2, 2013-03-28 BFP840ESD Electrical Characteristics 5.4 Characteristic DC Diagrams 18 IB = 70µA 16 IB = 60µA 14 IB = 50µA IC [mA] 12 IB = 40µA 10 8 IB = 30µA 6 IB = 20µA 4 IB = 10µA 2 0 0 0.5 1 1.5 VCE [V] 2 2.5 3 Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter 3 h FE 10 2 10 −2 10 −1 0 10 10 IC [mA] 1 10 2 10 Figure 5-3 DC Current Gain hFE = f (IC), VCE = 1.8 V Data Sheet 16 Revision 1.2, 2013-03-28 BFP840ESD Electrical Characteristics 2 10 1 10 0 10 IC [mA] −1 10 −2 10 −3 10 −4 10 −5 10 0.5 0.6 V 0.7 [V] 0.8 0.9 BE Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V 0 10 −1 10 −2 10 I B [mA] −3 10 −4 10 −5 10 −6 10 −7 10 0.5 0.6 V BE 0.7 [V] 0.8 0.9 Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V Data Sheet 17 Revision 1.2, 2013-03-28 BFP840ESD Electrical Characteristics −6 10 −7 10 −8 I B [A] 10 −9 10 −10 10 −11 10 0.3 0.4 0.5 VEB [V] 0.6 0.7 Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V Data Sheet 18 Revision 1.2, 2013-03-28 BFP840ESD Electrical Characteristics Characteristic AC Diagrams fT [GHz] 5.5 80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 2.00V 1.80V 1.50V 1.00V 0.50V 0 5 10 15 20 IC [mA] 25 30 35 40 Figure 5-7 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter 26 24 22 20 OIP3 [dBm] 18 16 14 1.5V, 2400MHz 1.8V, 2400MHz 1.5V, 5500MHz 1.8V, 5500MHz 12 10 8 6 4 2 0 0 5 10 15 I [mA] 20 25 30 C Figure 5-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters Data Sheet 19 Revision 1.2, 2013-03-28 BFP840ESD Electrical Characteristics 25 9 10 1 2 1 1 13 14 4 5 6 7 8 18 15 16 17 19 15 16 17 15 16 15 20 18 17 22 21 IC [mA] 19 20 9 10 11 12 3 4 1 1 20 21 18 19 22 21 19 5 20 21 1 22 1.2 22 23 22 20 21 1.4 1.6 VCE [V] 21 23 18 20 10 22 20 19 21 18 1.8 2 Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm]= f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz 25 −6 −5 −4 3 2 − − −1 0 3 4 6 7 5 6 2 3 5 15 4 7 1 5 6 IC [mA] 20 4 1 2 10 6 5 4 3 7 5 2 1 0 −1 1 1.2 5 4 3 4 3 2 1 0 −1 1.4 2 1 0 −1 1.6 V CE 1.8 2 [V] Figure 5-10 Compression Point at output OP1dB [dBm]= f (IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz Data Sheet 20 Revision 1.2, 2013-03-28 BFP840ESD Electrical Characteristics 0.05 0.04 C CB [pF] 0.045 0.035 0.03 0 0.2 0.4 0.6 0.8 1 V CB 1.2 1.4 1.6 1.8 2 [V] Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz 40 35 30 G G [dB] ms 25 Gma 20 G ms 2 |S21| 15 10 5 0 1 2 3 4 5 6 7 f [GHz] 8 9 10 11 12 Figure 5-12 Gain Gma, Gms, IS21I² = f (f), VCE = 1.8 V, IC = 10 mA Data Sheet 21 Revision 1.2, 2013-03-28 BFP840ESD Electrical Characteristics 39 36 0.45GHz 33 0.90GHz Gmax [dB] 30 27 1.50GHz 1.90GHz 2.40GHz 24 3.50GHz 21 5.50GHz 18 10.00GHz 12.00GHz 15 12 9 0 5 10 15 20 25 IC [mA] 30 35 40 45 Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 1.8 V, f = Parameter in GHz 39 Gmax [dB] 36 33 0.45GHz 30 0.90GHz 27 1.50GHz 1.90GHz 2.40GHz 3.50GHz 24 5.50GHz 21 18 10.00GHz 12.00GHz 15 12 9 0 0.5 1 V 1.5 [V] 2 2.5 3 CE Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 10 mA, f = Parameter in GHz Data Sheet 22 Revision 1.2, 2013-03-28 BFP840ESD Electrical Characteristics 1 1.5 0.5 2 12.0 0.4 12.0 11.0 11.0 10.0 0.3 9.0 0.2 3 10.0 9.0 4 5 8.0 8.0 0.03 to 12 GHz 7.0 0.1 7.0 0.1 0 10 6.0 0.2 0.3 0.4 0.5 6.0 1 5.0 1.5 2 3 4 5 0.03 0.03 4.0 −0.1 −10 5.0 3.0 −0.2 −5 2.0 4.0 1.0 1.0 1.0 2.0 −0.3 −4 −3 3.0 2.0 −0.4 5mA −0.5 10mA −2 15mA −1.5 −1 Figure 5-15 Input Reflection Coefficient S11 = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 3.5 2.4 5.5 0.1 5.5 0.1 0 0.2 0.3 0.4 0.5 1 1.5 3.5 5.5 −0.1 8.0 0.5 10 1.9 1.5 3.5 2.4 3 0.9 4 5 2 0.5 0.5 −10 8.0 −0.2 −5 10.0 −4 10.0 −0.3 12.0 −3 12.0 5mA −0.4 −0.5 −2 10mA 15mA −1.5 −1 Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA Data Sheet 23 Revision 1.2, 2013-03-28 BFP840ESD Electrical Characteristics 1 1.5 0.5 2 0.4 12.0 0.3 10.0 5 0.03 to 12 GHz 9.0 9.0 0.1 0.1 4 10.0 0.2 0 3 12.0 11.0 11.0 10 8.0 8.0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 0.03 7.0 7.0 −0.1 6.0 6.0 −10 5.0 4.0 −0.2 5.0 1.0 3.0 1.0 −5 −4 2.0 4.0 −0.3 −3 2.0 3.0 −0.4 5mA −0.5 −2 10mA 15mA −1.5 −1 Figure 5-17 Output Reflection Coefficient S22 = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA 2 1.8 1.6 NF min [dB] 1.4 1.2 1 0.8 IC = 15mA IC = 10mA 0.6 I = 5mA C 0.4 0.2 0 0 2 4 6 f [GHz] 8 10 12 Figure 5-18 Noise Figure NFmin = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA, ZS = Zopt Data Sheet 24 Revision 1.2, 2013-03-28 BFP840ESD Electrical Characteristics 2 1.8 1.6 NF min [dB] 1.4 1.2 1 f = 12GHz 0.8 f = 10GHz 0.6 f = 5.5GHz 0.4 f = 3.5GHz f = 2.4GHz 0.2 f = 0.9GHz 0 0 5 10 I [mA] 15 20 C NF 50 [dB] Figure 5-19 Noise Figure NFmin = f (IC), VCE = 1.8 V, ZS = Zopt, f = Parameter in GHz 3.4 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 f = 12GHz f = 10GHz f = 5.5GHz f = 3.5GHz f = 2.4GHz f = 0.9GHz 0 5 10 IC [mA] 15 20 Figure 5-20 Noise Figure NF50 = f (IC), VCE = 1.8 V, ZS = 50 Ω, f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. Data Sheet 25 Revision 1.2, 2013-03-28 BFP840ESD Simulation Data 6 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website. Please consult our website and download the latest versions before actually starting your design. You find the BFP840ESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 12 GHz using typical devices. The BFP840ESD SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. Data Sheet 26 Revision 1.2, 2013-03-28 BFP840ESD Package Information SOT343 7 Package Information SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 ±0.1 3 2.1 ±0.1 4 0.3 +0.1 -0.05 4x 0.1 M +0.1 0.15 -0.05 0.6 +0.1 -0.05 0.2 M A SOT343-PO V08 Figure 7-1 Package Outline 1.6 0.8 0.6 1.15 0.9 SOT343-FP V08 Figure 7-2 Package Footprint Date code (YM) 2005, June 56 Type code XYs Manufacturer Pin 1 Figure 7-3 Marking Description (Marking BFP840ESD: T8s) 0.2 2.3 8 4 Pin 1 2.15 1.1 SOT323-TP V02 Figure 7-4 Tape Dimensions Data Sheet 27 Revision 1.2, 2013-03-28 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG