BFP640FESD Data Sheet (1.6 MB, EN)

BFP640FESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.2, 2012-09-19
RF & Protection Devices
Edition 2012-09-19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP640FESD
BFP640FESD, Robust Low Noise Silicon Germanium Bipolar RF Transistor
Revision History: 2012-09-19, Revision 1.2
Page
Subjects (major changes since last revision)
This data sheet replaces the revision from 2010-06-29.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the data sheet has been expanded
and updated.
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Data Sheet
3
Revision 1.2, 2012-09-19
BFP640FESD
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
5.1
5.2
5.3
5.4
5.5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
7
Package Information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data Sheet
4
11
11
11
12
17
20
Revision 1.2, 2012-09-19
BFP640FESD
List of Figures
List of Figures
Figure 4-1
Figure 5-1
Figure 5-2
Figure 5-3
Figure 5-4
Figure 5-5
Figure 5-6
Figure 5-7
Figure 5-8
Figure 5-9
Figure 5-10
Figure 5-11
Figure 5-12
Figure 5-13
Figure 5-14
Figure 5-15
Figure 5-16
Figure 5-17
Figure 5-18
Figure 7-1
Figure 7-2
Figure 7-3
Figure 7-4
Data Sheet
Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BFP640FESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA. . . . . . . . . . . . .
DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Base-Emitter Voltage IC = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . .
Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . .
3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters . . . . . . . . . . . . . . . . .
Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . .
Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 30 mA . . . . . . . . . . .
Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 30 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . .
Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . .
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Marking Description (Marking BFP640FESD: T4s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
10
12
17
17
18
18
19
20
20
21
21
22
22
23
23
24
24
25
25
27
27
27
27
Revision 1.2, 2012-09-19
BFP640FESD
List of Tables
List of Tables
Table 3-1
Table 4-1
Table 5-1
Table 5-2
Table 5-3
Table 5-4
Table 5-5
Table 5-6
Table 5-7
Table 5-8
Table 5-9
Table 5-10
Table 5-11
Data Sheet
Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
AC Characteristics, VCE = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6
Revision 1.2, 2012-09-19
BFP640FESD
Product Brief
1
Product Brief
The BFP640FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s
reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design
supports voltages up to VCEO = 4.1 V and currents up to IC = 50 mA. The device is especially suited for mobile
applications in which low power consumption is a key requirement. The typical transition frequency is
approximately 46 GHz, hence the device offers high power gain at frequencies up to 10 GHz in amplifier
applications. The transistor is fitted with internal protection circuits, which enhance the robustness against
electrostatic discharge (ESD) and high levels of RF input power. The device is housed in a thin small flat plastic
package with visible leads.
Data Sheet
7
Revision 1.2, 2012-09-19
BFP640FESD
Features
2
•
•
•
•
•
•
•
•
Features
Robust very low noise amplifier based on Infineon´s
reliable, high volume SiGe:C wafer technology
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
0.6 dB minimum noise figure typical at 1.5 GHz,
0.65 dB at 2.4 GHz, 6 mA
28.5 dB maximum gain Gms typical at 1.5 GHz,
25 dB Gms at 2.4 GHz, 30 mA
26 dBm OIP3 typical at 2.4 GHz, 30 mA
Thin small flat Pb-free (RoHS compliant) and halogen-free package
with visible leads
Qualification report according to AEC-Q101 available
Applications
As Low Noise Amplifier (LNA) in
•
•
•
•
•
Mobile portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMAX 2.5 / 3.5 / 5 GHz, UWB,
Bluetooth
Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and
C-band LNB
Multimedia applications such as mobile / portable TV, CATV, FM radio
3G/4G UMTS/LTE mobile phone applications
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
Package
BFP640FESD
TSFP-4-1
Data Sheet
Pin Configuration
1=B
2=E
8
3=C
Marking
4=E
T4s
Revision 1.2, 2012-09-19
BFP640FESD
Maximum Ratings
3
Maximum Ratings
Table 3-1
Maximum Ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Min.
Collector emitter voltage
Collector base voltage1)
Collector emitter voltage
3)
Collector current
RF input power4)
ESD stress pulse
5)
Note / Test Condition
Max.
Open base
VCEO
–
4.1
V
TA = 25 °C
–
3.6
V
TA = -55 °C
Open emitter
VCBO
2)
Base current
Unit
–
4.8
V
TA = 25 °C
–
4.3
V
TA = -55 °C
E-B short circuited
VCES
–
4.1
V
TA = 25 °C
–
3.6
V
TA = -55 °C
IB
-10
6
mA
–
IC
–
50
mA
–
PRFin
–
21
dBm
–
VESD
-2
2
kV
HBM, all pins, acc. to
JESD22-A114
Total power dissipation
6)
Ptot
–
200
mW
TS ≤ 90 °C
Junction temperature
TJ
–
150
°C
–
Storage temperature
TStg
-55
150
°C
–
1)
2)
3)
4)
5)
6)
Low VCBO due to integrated protection circuits.
VCES is identical to VCEO due to integrated protection circuits.
Sustainable reverse bias current is high due to integrated protection circuits.
RF input power is high due to integrated protection circuits
ESD robustness is high due to integrated protection circuits.
TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Data Sheet
9
Revision 1.2, 2012-09-19
BFP640FESD
Thermal Characteristics
4
Thermal Characteristics
Table 4-1
Thermal Resistance
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
1)
Junction - soldering point
RthJS
–
300
–
K/W
–
1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
250
Ptot [mW]
200
150
100
50
0
0
25
50
75
TS [°C]
100
125
150
Figure 4-1 Total Power Dissipation Ptot = f (Ts)
Data Sheet
10
Revision 1.2, 2012-09-19
BFP640FESD
Electrical Characteristics
5
Electrical Characteristics
5.1
DC Characteristics
Table 5-1
DC Characteristics at TA = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage
V(BR)CEO
Values
Min.
Typ.
Max.
4.1
4.7
–
Unit
Note / Test Condition
V
IC = 1 mA, IB = 0
Open base
Collector emitter leakage current
ICES
–
–
500
nA
VCE = 2 V, VBE = 0
E-B short circuited
Collector base leakage current
ICBO
–
–
500
nA
VCB = 2 V, IE = 0
Open emitter
Emitter base leakage current
IEBO
–
–
10
μA
VEB = 0.5 V, IC = 0
Open collector
DC current gain
hFE
110
180
270
VCE = 3 V, IC = 30 mA
Pulse measured
5.2
General AC Characteristics
Table 5-2
General AC Characteristics at TA = 25 °C
Parameter
Transition frequency
Symbol
fT
Values
Min.
Typ.
Max.
–
46
–
Unit
Note / Test Condition
GHz
VCE = 3 V, IC = 30 mA,
f = 1 GHz
Collector base capacitance
CCB
–
0.08
–
pF
VCB = 3 V, VBE = 0 V
f = 1 MHz
Emitter grounded
Collector emitter capacitance
CCE
–
0.35
–
pF
VCE = 3 V, VBE = 0 V
f = 1 MHz
Base grounded
Emitter base capacitance
CEB
–
0.6
–
pF
VEB = 0.4 V, VCB = 0 V
f = 1 MHz
Collector grounded
Data Sheet
11
Revision 1.2, 2012-09-19
BFP640FESD
Electrical Characteristics
5.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
VC
Top View
Bias -T
OUT
C
E
VB
E
B
Bias-T
(Pin 1)
IN
Figure 5-1 BFP640FESD Testing Circuit
Table 5-3
AC Characteristics, VCE = 3 V, f = 150 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
dB
Maximum power gain
Low noise operation point
Gms
–
34
–
IC = 6 mA
High linearity operation point
Gms
–
40
–
IC = 30 mA
dB
Transducer gain
ZS = ZL = 50 Ω
Low noise operation point
S21
–
25.5
–
IC = 6 mA
High linearity operation point
S21
–
35.5
–
IC = 30 mA
dB
Minimum noise figure
ZS = Zopt
Minimum noise figure
NFmin
–
0.55
–
IC = 6 mA
Associated gain
Gass
–
30.5
–
IC = 6 mA
dBm
Linearity
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
11
–
IC = 30 mA
3rd order intercept point
OIP3
–
24.5
–
IC = 30 mA
Data Sheet
12
Revision 1.2, 2012-09-19
BFP640FESD
Electrical Characteristics
Table 5-4
AC Characteristics, VCE = 3 V, f = 450 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
dB
Maximum power gain
Low noise operation point
Gms
–
29
–
IC = 6 mA
High linearity operation point
Gms
–
35
–
IC = 30 mA
dB
Transducer gain
ZS = ZL = 50 Ω
Low noise operation point
S21
–
25
–
IC = 6 mA
High linearity operation point
S21
–
33
–
IC = 30 mA
dB
Minimum noise figure
ZS = Zopt
Minimum noise figure
NFmin
–
0.55
–
IC = 6 mA
Associated gain
Gass
–
28.5
–
IC = 6 mA
dBm
Linearity
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
11
–
IC = 30 mA
3rd order intercept point
OIP3
–
24.5
–
IC = 30 mA
Table 5-5
AC Characteristics, VCE = 3 V, f = 900 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
dB
Maximum power gain
Low noise operation point
Gms
–
26
–
IC = 6 mA
High linearity operation point
Gms
–
31.5
–
IC = 30 mA
dB
Transducer gain
ZS = ZL = 50 Ω
Low noise operation point
S21
–
23.5
–
IC = 6 mA
High linearity operation point
S21
–
29.5
–
IC = 30 mA
dB
Minimum noise figure
ZS = Zopt
Minimum noise figure
NFmin
–
0.55
–
IC = 6 mA
Associated gain
Gass
–
26
–
IC = 6 mA
dBm
Linearity
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
11
–
IC = 30 mA
3rd order intercept point
OIP3
–
25
–
IC = 30 mA
Data Sheet
13
Revision 1.2, 2012-09-19
BFP640FESD
Electrical Characteristics
Table 5-6
AC Characteristics, VCE = 3 V, f = 1.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
dB
Maximum power gain
Low noise operation point
Gms
–
24
–
IC = 6 mA
High linearity operation point
Gms
–
28.5
–
IC = 30 mA
dB
Transducer gain
ZS = ZL = 50 Ω
Low noise operation point
S21
–
21.5
–
IC = 6 mA
High linearity operation point
S21
–
25.5
–
IC = 30 mA
dB
Minimum noise figure
ZS = Zopt
Minimum noise figure
NFmin
–
0.6
–
IC = 6 mA
Associated gain
Gass
–
22.5
–
IC = 6 mA
dBm
Linearity
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
11.5
–
IC = 30 mA
3rd order intercept point
OIP3
–
25.5
–
IC = 30 mA
Table 5-7
AC Characteristics, VCE = 3 V, f = 1.9 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
dB
Maximum power gain
Low noise operation point
Gms
–
23
–
IC = 6 mA
High linearity operation point
Gms
–
26.5
–
IC = 30 mA
dB
Transducer gain
ZS = ZL = 50 Ω
Low noise operation point
S21
–
20.5
–
IC = 6 mA
High linearity operation point
S21
–
23.5
–
IC = 30 mA
dB
Minimum noise figure
ZS = Zopt
Minimum noise figure
NFmin
–
0.6
–
IC = 6 mA
Associated gain
Gass
–
21
–
IC = 6 mA
dBm
Linearity
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
11.5
–
IC = 30 mA
3rd order intercept point
OIP3
–
26
–
IC = 30 mA
Data Sheet
14
Revision 1.2, 2012-09-19
BFP640FESD
Electrical Characteristics
Table 5-8
AC Characteristics, VCE = 3 V, f = 2.4 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
dB
Maximum power gain
Low noise operation point
Gms
–
21.5
–
IC = 6 mA
High linearity operation point
Gms
–
25
–
IC = 30 mA
dB
Transducer gain
ZS = ZL = 50 Ω
Low noise operation point
S21
–
18.5
–
IC = 6 mA
High linearity operation point
S21
–
21.5
–
IC = 30 mA
dB
Minimum noise figure
ZS = Zopt
Minimum noise figure
NFmin
–
0.65
–
IC = 6 mA
Associated gain
Gass
–
19.5
–
IC = 6 mA
dBm
Linearity
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
11.5
–
IC = 30 mA
3rd order intercept point
OIP3
–
26
–
IC = 30 mA
Table 5-9
AC Characteristics, VCE = 3 V, f = 3.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
dB
Maximum power gain
Low noise operation point
Gms
–
20
–
IC = 6 mA
High linearity operation point
Gma
–
21.5
–
IC = 30 mA
dB
Transducer gain
ZS = ZL = 50 Ω
Low noise operation point
S21
–
15.5
–
IC = 6 mA
High linearity operation point
S21
–
18
–
IC = 30 mA
dB
Minimum noise figure
ZS = Zopt
Minimum noise figure
NFmin
–
0.75
–
IC = 6 mA
Associated gain
Gass
–
15.5
–
IC = 6 mA
dBm
Linearity
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
11.5
–
IC = 30 mA
3rd order intercept point
OIP3
–
26
–
IC = 30 mA
Data Sheet
15
Revision 1.2, 2012-09-19
BFP640FESD
Electrical Characteristics
Table 5-10 AC Characteristics, VCE = 3 V, f = 5.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
dB
Maximum power gain
Low noise operation point
Gms
–
17.5
–
IC = 6 mA
High linearity operation point
Gma
–
16.5
–
IC = 30 mA
dB
Transducer gain
ZS = ZL = 50 Ω
Low noise operation point
S21
–
12
–
IC = 6 mA
High linearity operation point
S21
–
14
–
IC = 30 mA
dB
Minimum noise figure
ZS = Zopt
Minimum noise figure
NFmin
–
0.95
–
IC = 6 mA
Associated gain
Gass
–
13
–
IC = 6 mA
dBm
Linearity
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
11
–
IC = 30 mA
3rd order intercept point
OIP3
–
25.5
–
IC = 30 mA
Table 5-11 AC Characteristics, VCE = 3 V, f = 10 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
dB
Maximum power gain
Low noise operation point
Gma
–
10
–
IC = 6 mA
High linearity operation point
Gma
–
11
–
IC = 30 mA
dB
Transducer gain
ZS = ZL = 50 Ω
Low noise operation point
S21
–
6
–
IC = 6 mA
High linearity operation point
S21
–
8
–
IC = 30 mA
dB
Minimum noise figure
ZS = Zopt
Minimum noise figure
NFmin
–
1.7
–
IC = 6 mA
Associated gain
Gass
–
8
–
IC = 6 mA
dBm
Linearity
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
11
–
IC = 30 mA
3rd order intercept point
OIP3
–
24.5
–
IC = 30 mA
Notes
1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1
2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all
measured result
3. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
16
Revision 1.2, 2012-09-19
BFP640FESD
Electrical Characteristics
5.4
Characteristic DC Diagrams
60
50
IB=325µA
IB=275µA
IC [mA]
40
IB=225µA
30
IB=175µA
IB=125µA
20
IB=75µA
10
IB=25µA
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VCE[V]
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA
hFE
1000
100
0.1
1
10
100
IC [mA]
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V
Data Sheet
17
Revision 1.2, 2012-09-19
BFP640FESD
Electrical Characteristics
100
10
IC [mA]
1
0.1
0.01
0.001
0.0001
0.00001
0.4
0.5
0.6
0.7
0.8
0.9
VBE [V]
Figure 5-4 Collector Current vs. Base-Emitter Voltage IC = f (VBE), VCE = 2 V
1
0.1
IB [mA]
0.01
0.001
0.0001
0.00001
0.000001
0.4
0.5
0.6
0.7
0.8
0.9
VBE [V]
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
Data Sheet
18
Revision 1.2, 2012-09-19
BFP640FESD
Electrical Characteristics
1.E-04
1.E-05
IB [A]
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
0.2
0.3
0.4
0.5
0.6
VEB [V]
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V
Data Sheet
19
Revision 1.2, 2012-09-19
BFP640FESD
Electrical Characteristics
5.5
Characteristic AC Diagrams
50
45
4.00V
3.00V
40
35
2.50V
fT [GHz]
30
25
20
2.00V
15
10
5
0
1.00V
0
10
20
30
IC [mA]
40
50
60
Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V
30
25
OIP3 [dBm]
20
15
10
2V, 1.5GHz
3V, 1.5GHz
2V, 2.4GHz
3V, 2.4GHz
5
0
−5
0
10
20
30
40
50
IC [mA]
Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters
Data Sheet
20
Revision 1.2, 2012-09-19
BFP640FESD
Electrical Characteristics
0.2
0.18
0.16
0.14
Ccb [pF]
0.12
0.1
0.08
0.06
0.04
0.02
0
0
0.5
1
1.5
2
VCB [V]
2.5
3
3.5
4
Figure 5-9 Collector Base Capacitance CCB = f (VCB), f = 1 MHz
50
45
40
35
G
ms
G [dB]
30
25
Gma
20
|S21|2
15
10
5
0
0
1
2
3
4
5
6
f [GHz]
7
8
9
10
Figure 5-10 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 30 mA
Data Sheet
21
Revision 1.2, 2012-09-19
BFP640FESD
Electrical Characteristics
42
0.15GHz
39
0.45GHz
36
33
0.90GHz
30
1.50GHz
1.90GHz
2.40GHz
G [dB]
27
24
21
3.50GHz
18
5.50GHz
15
12
10.00GHz
9
6
3
0
0
10
20
30
IC [mA]
40
50
60
Figure 5-11 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
42
0.15GHz
39
36
0.45GHz
33
0.90GHz
30
1.50GHz
1.90GHz
2.40GHz
G [dB]
27
24
3.50GHz
21
18
5.50GHz
15
12
10.00GHz
9
6
3
0
0
1
2
3
4
5
VCE [V]
Figure 5-12 Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz
Data Sheet
22
Revision 1.2, 2012-09-19
BFP640FESD
2
0 .6
1
0.8
Electrical Characteristics
0.
10 GHz
4
3
4
0. 2
5
10
3
4
5
2
1
0.8
0.6
0
0.2
0.4
10
10 MHz
-10
-4
-5
2
-0.
-3
-2
4
Ic = 6 mA
Ic = 30 mA
-1
Step 1 GHz
-0 . 8
-0 .
6
.
-0
2
0 .6
1
0 .8
Figure 5-13 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 30 mA
0.
4
3
4
5
0 .2
2.4 GHz
10
3
4
5
2
0.8
1
0.6
0
0.2
0.4
10
5.5 GHz
0.45 GHz
-10
-4
-5
2
-0.
10 GHz
-3
-2
4
-1
-0.8
-0.
6
.
-0
Ic = 6 mA
Ic = 30 mA
Figure 5-14 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 30 mA
Data Sheet
23
Revision 1.2, 2012-09-19
BFP640FESD
2
0 .6
1
0.8
Electrical Characteristics
0.
4
3
4
0. 2
5
10
10
3
4
5
2
0.8
1
0.6
10 MHz
0.8
0
0.2
0.4
10 GHz
-10
-4
-5
2
-0.
-3
-2
4
Ic = 6 mA
Ic = 30 mA
-1
-0 . 8
Step 1 GHz
-0 .
6
.
-0
Figure 5-15 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 30 mA
2
1.8
1.6
NFmin [dB]
1.4
1.2
1
0.8
0.6
IC = 30mA
IC = 6.0mA
0.4
0.2
0
0
2
4
6
8
10
f [GHz]
Figure 5-16 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 30 mA, ZS = Zopt
Data Sheet
24
Revision 1.2, 2012-09-19
BFP640FESD
NFmin [dB]
Electrical Characteristics
4
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
f = 10GHz
f = 5.5GHz
f = 2.4GHz
f = 0.45GHz
0
10
20
30
40
50
I [mA]
c
Figure 5-17 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
6
5.6
5.2
f = 10GHz
f = 5.5GHz
f = 2.4GHz
f = 0.45GHz
4.8
4.4
NF50 [dB]
4
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
5
10
15
20
25
30
I [mA]
35
40
45
50
c
Figure 5-18 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA = 25°C.
Data Sheet
25
Revision 1.2, 2012-09-19
BFP640FESD
Simulation Data
6
Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest
versions before actually starting your design.
You find the BFP640FESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into
these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the
pin configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP640FESD
SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE
GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
Data Sheet
26
Revision 1.2, 2012-09-19
BFP640FESD
Package Information TSFP-4-1
7
Package Information TSFP-4-1
0.2 ±0.05
2
10° MAX.
1
3
1.2 ±0.05
0.2 ±0.05
4
0.55 ±0.04
0.8 ±0.05
1.4 ±0.05
0.2 ±0.05
0.15 ±0.05
0.5 ±0.05
0.5 ±0.05
TSFP-4-1, -2-PO V04
Figure 7-1 Package Outline
0.9
0.45
0.35
0.5
0.5
TSFP-4-1, -2-FP V04
Figure 7-2 Package Footprint
Figure 7-3 Marking Description (Marking BFP640FESD: T4s)
0.2
Pin 1
8
1.4
4
0.7
1.55
TSFP-4-1, -2-TP V05
Figure 7-4 Tape Dimensions
Data Sheet
27
Revision 1.2, 2012-09-19
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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