BFP760 Low Noise Silicon Germanium Bipolar RF Transistor

BFP760
Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.1, 2013-08-05
RF & Protection Devices
Edition 2013-08-05
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP760
BFP760, Low Noise Silicon Germanium Bipolar RF Transistor
Revision History: 2013-08-05, Revision 1.1
Page
Subjects (major changes since last revision)
This data sheet replaces the revision from 2012-12-04.
Pages 14,15,16: Fig. 5-2, 5-4, 5-5, 5-6 corrected.
Table 5-4: outlier value for OIP3 corrected.
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Data Sheet
3
Revision 1.1, 2013-08-05
BFP760
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
5.1
5.2
5.3
5.4
5.5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
7
Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Data Sheet
4
11
11
11
12
15
18
Revision 1.1, 2013-08-05
BFP760
List of Figures
List of Figures
Figure 4-1
Figure 5-1
Figure 5-2
Figure 5-3
Figure 5-4
Figure 5-5
Figure 5-6
Figure 5-7
Figure 5-8
Figure 5-9
Figure 5-10
Figure 5-11
Figure 5-12
Figure 5-13
Figure 5-14
Figure 5-15
Figure 5-16
Figure 5-17
Figure 5-18
Figure 5-19
Figure 5-20
Figure 7-1
Figure 7-2
Figure 7-3
Figure 7-4
Data Sheet
Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BFP760 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA. . . . . . . . . . . . .
DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . .
Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . .
3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters . . . . . . . . . . . . . . . . .
3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . .
Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . . . . .
Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . .
Input Reflection Coefficient S11 = f (f), VCE = 3 V, IC = 10 / 30 mA . . . . . . . . . . . . . . . . . . . . . . . . .
Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 10 / 30 mA . . . . . . . . . .
Output Reflection Coefficient S22 = f (f), VCE = 3 V, IC = 10 / 30 mA. . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f (f), VCE = 3 V, IC = 10 / 30 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . .
Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . .
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Marking Example (Marking BFP760: R6s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
10
12
15
15
16
16
17
18
18
19
19
20
20
21
21
22
22
23
23
24
24
26
26
26
26
Revision 1.1, 2013-08-05
BFP760
List of Tables
List of Tables
Table 3-1
Table 4-1
Table 5-1
Table 5-2
Table 5-3
Table 5-4
Table 5-5
Table 5-6
Table 5-7
Data Sheet
Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
AC Characteristics, VCE = 3 V, f = 0.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 3 V, f = 1.8 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6
Revision 1.1, 2013-08-05
BFP760
Product Brief
1
Product Brief
The BFP760 is a linear and very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s
reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design
supports voltages up to VCEO = 4.0 V and currents up to IC = 70 mA. With its high linearity at currents as low as 10
mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately
45 GHz, hence the device offers high power gain at frequencies up to 9 GHz in amplifier applications. The device
is housed in an easy to use plastic package with visible leads.
Data Sheet
7
Revision 1.1, 2013-08-05
BFP760
Features
2
•
•
•
•
•
•
•
•
Features
Very low noise amplifier based on Infineon´s reliable,
high volume SiGe:C technology
High linearity OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA
High transition frequency fT = 45 GHz @ 1 GHz, 3 V, 35mA
NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA
Maximum power gain Gms = 21.5 dB @ 3.5 GHz, 3 V, 30 mA
Low power consumption, ideal for mobile applications
Easy to use Pb-free (RoHS compliant) and halogen-free
standard package with visible leads
Qualification report according to AEC-Q101 available
3
2
4
1
Applications
As Low Noise Amplifier (LNA) in
•
•
•
•
•
Mobile and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5 GHz, Bluetooth
Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
and C-band LNB
Multimedia applications such as mobile/portable TV, CATV, FM Radio
UMTS/LTE mobile phone applications
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, buffer amplifier in VCOs
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
Package
Pin Configuration
BFP760
SOT343
1=B
Data Sheet
2=E
8
Marking
3=C
4=E
R6s
Revision 1.1, 2013-08-05
BFP760
Maximum Ratings
3
Maximum Ratings
Table 3-1
Maximum Ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Collector emitter voltage
Values
Min.
Max.
–
–
4.0
3.5
VCEO
Unit
V
Note / Test Condition
Open base
TA = 25 °C
TA = -55 °C
Collector emitter voltage
VCES
–
13
V
E-B short circuited
Collector base voltage
VCBO
–
13
V
Open emitter
Emitter base voltage
VEBO
–
1.2
V
Open collector
Collector current
IC
–
70
mA
–
IB
–
4
mA
–
Ptot
–
240
mW
TS ≤ 95 °C
Junction temperature
TJ
–
150
°C
–
Storage temperature
TStg
-55
150
°C
–
Base current
Total power dissipation
1)
1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Data Sheet
9
Revision 1.1, 2013-08-05
BFP760
Thermal Characteristics
4
Thermal Characteristics
Table 4-1
Thermal Resistance
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
1)
Junction - soldering point
RthJS
–
230
–
K/W
–
1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
280
240
Ptot [mW]
200
160
120
80
40
0
0
25
50
75
T [°C]
100
125
150
S
Figure 4-1 Total Power Dissipation Ptot = f (Ts)
Data Sheet
10
Revision 1.1, 2013-08-05
BFP760
Electrical Characteristics
5
Electrical Characteristics
5.1
DC Characteristics
Table 5-1
DC Characteristics at TA = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage
V(BR)CEO
Values
Min.
Typ.
Max.
4
4.7
–
Unit
Note / Test Condition
V
IC = 1 mA, IB = 0
Open base
Collector emitter leakage current
ICES
–
10
1
1)
400
401)
nA
VCE = 13 V, VBE = 0
VCE = 5 V, VBE = 0
E-B short circuited
Collector base leakage current
ICBO
–
1
40
1)
1)
nA
VCB = 5V, IE = 0
Open emitter
Emitter base leakage current
IEBO
–
1
40
DC current gain
hFE
160
250
400
nA
VEB = 0.5V, IC = 0
Open collector
VCE = 3 V, IC = 35 mA
Pulse measured
1) Maximum values not limited by the device but by the short cycle time of the 100% test
5.2
General AC Characteristics
Table 5-2
General AC Characteristics at TA = 25 °C
Parameter
Transition frequency
Symbol
fT
Values
Min.
Typ.
Max.
–
45
–
Unit
Note / Test Condition
GHz
VCE = 3 V, IC = 35 mA
f = 1 GHz
Collector base capacitance
CCB
–
0.13
0.2
pF
VCB = 3 V, VBE = 0
f = 1 MHz
Emitter grounded
Collector emitter capacitance
CCE
–
0.42
–
pF
VCE = 3 V, VBE = 0
f = 1 MHz
Base grounded
Emitter base capacitance
CEB
–
0.65
–
pF
VEB = 0.5 V, VCB = 0
f = 1 MHz
Collector grounded
Data Sheet
11
Revision 1.1, 2013-08-05
BFP760
Electrical Characteristics
5.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
VC
Top View
Bias -T
OUT
E
C
B
E
VB
Bias-T
(Pin 1)
IN
Figure 5-1 BFP760 Testing Circuit
Data Sheet
12
Revision 1.1, 2013-08-05
BFP760
Electrical Characteristics
Table 5-3
AC Characteristics, VCE = 3 V, f = 0.9 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Power gain
dB
Maximum power gain
Transducer gain
Gms
|S21|
2
–
29
–
IC = 30 mA
–
28
–
IC = 30 mA
Minimum Noise Figure
dB
Minimum noise figure
NFmin
–
0.5
–
IC = 10 mA
Associated gain
Gass
–
25.5
–
IC = 10 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB compression point at output
OP1dB
–
14
–
IC = 30 mA
3rd order intercept point at output
OIP3
–
27
–
IC = 30 mA
Table 5-4
AC Characteristics, VCE = 3 V, f = 1.8 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Power gain
dB
Maximum power gain
Transducer gain
Gms
|S21|
2
–
25
–
IC = 30 mA
–
22
–
IC = 30 mA
Minimum Noise Figure
dB
Minimum noise figure
NFmin
–
0.55
–
IC = 10 mA
Associated gain
Gass
–
20.5
–
IC = 10 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB compression point at output
OP1dB
–
14.5
–
IC = 30 mA
3rd order intercept point at output
OIP3
–
28
–
IC = 30 mA
Table 5-5
AC Characteristics, VCE = 3 V, f = 2.4 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Max.
Power gain
Maximum power gain
Transducer gain
Note / Test Condition
dB
Gms
|S21|
2
–
23.5
–
IC = 30 mA
–
20
–
IC = 30 mA
Minimum Noise Figure
dB
Minimum noise figure
NFmin
–
0.6
–
IC = 10 mA
Associated gain
Gass
–
19
–
IC = 10 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB compression point at output
OP1dB
–
14
–
IC = 30 mA
3rd order intercept point at output
OIP3
–
28
–
IC = 30 mA
Data Sheet
13
Revision 1.1, 2013-08-05
BFP760
Electrical Characteristics
Table 5-6
AC Characteristics, VCE = 3 V, f = 3.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Power gain
dB
Maximum power gain
Transducer gain
Gms
|S21|
2
–
21.5
–
IC = 30 mA
–
16.5
–
IC = 30 mA
Minimum Noise Figure
dB
Minimum noise figure
NFmin
–
0.7
–
IC = 10 mA
Associated gain
Gass
–
16
–
IC = 10 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB compression point at output
OP1dB
–
14.5
–
IC = 30 mA
3rd order intercept point at output
OIP3
–
28.5
–
IC = 30 mA
Table 5-7
AC Characteristics, VCE = 3 V, f = 5.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Max.
Power gain
Maximum power gain
Transducer gain
Note / Test Condition
dB
Gms
|S21|
2
–
16.5
–
IC = 30 mA
–
12
–
IC = 30 mA
Minimum Noise Figure
dB
Minimum noise figure
NFmin
–
0.95
–
IC = 10 mA
Associated gain
Gass
–
12.5
–
IC = 10 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB compression point at output
OP1dB
–
13
–
IC = 30 mA
3rd order intercept point at output
OIP3
–
27
–
IC = 30 mA
Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz
Data Sheet
14
Revision 1.1, 2013-08-05
BFP760
Electrical Characteristics
5.4
Characteristic DC Diagrams
55
50
220μA
45
200μA
180μA
40
IC [mA]
160μA
35
140μA
30
120μA
100μA
25
80μA
20
60μA
15
40μA
10
20μA
5
0
0
0.5
1
1.5
2
2.5
3
VCE [V]
3.5
4
4.5
5
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA
3
hFE
10
2
10
0
10
1
10
I [mA]
2
10
C
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V
Data Sheet
15
Revision 1.1, 2013-08-05
BFP760
Electrical Characteristics
2
10
1
10
0
IC [mA]
10
−1
10
−2
10
−3
10
−4
10
0.5
0.55
0.6
0.65
0.7
VBE [V]
0.75
0.8
0.85
Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V
0
10
−1
10
−2
IB [mA]
10
−3
10
−4
10
−5
10
−6
10
0.5
0.55
0.6
0.65
0.7
VBE [V]
0.75
0.8
0.85
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
Data Sheet
16
Revision 1.1, 2013-08-05
BFP760
Electrical Characteristics
−11
IB [A]
10
−12
10
−13
10
0.6
0.7
0.8
0.9
VEB [V]
1
1.1
1.2
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V
Data Sheet
17
Revision 1.1, 2013-08-05
BFP760
Electrical Characteristics
5.5
Characteristic AC Diagrams
50
45
4.00V
3.50V
40
3.00V
fT [GHz]
35
30
2.50V
25
20
2.00V
15
10
1.50V
1.00V
5
0
0
10
20
30
40
I [mA]
50
60
70
80
C
Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V
30
25
OIP3 [dBm]
20
15
2V, 2400MHz
3V, 2400MHz
2V, 5500MHz
3V, 5500MHz
10
5
0
0
10
20
30
40
50
I [mA]
C
Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters
Data Sheet
18
Revision 1.1, 2013-08-05
BFP760
45
26
22 23
24
25
18 19
20
21
50
1
32
4
5
76
8
190
11
1132
15
16
17
Electrical Characteristics
27
28
28
27
26
25
IC [mA]
35
11
1132
15 1
16 4
17
18
19
20
21
22
23
24
40
30
25
26
27
25
24
23
22
21
20
19
18
17
16
15
20
15
14
10
26
1
1.5
2
2.5
VCE [V]
3
3.5
4
14
10
9
14
13
11
5
3
30
12
4
6
7
−
0−1 2
35
15
2 1
40
8
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
8
12
10
7
25
4
IC [mA]
13
9
4
8
7
6
5
4
5
15
6
20
10
5
0
−2−1
1
1
1.5
2
3
12
11
12
0
−2−1
−3
−4 2
2.5
VCE [V]
3
11
10
9
8
7
6
5
4
−3
0
−2−1
3
10
9
8
7
6
5
12
3.5
3
−3
4
Figure 5-10 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
Data Sheet
19
Revision 1.1, 2013-08-05
BFP760
Electrical Characteristics
0.28
0.24
CCB [pF]
0.2
0.16
0.12
0.08
0.04
0
0
0.6
1.2
1.8
V
CB
2.4
3
[V]
Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz
45
40
35
30
G
G [dB]
ms
25
20
G
ma
15
2
|S21|
10
5
0
0
1
2
3
4
5
f [G]
6
7
8
9
10
Figure 5-12 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 30 mA
Data Sheet
20
Revision 1.1, 2013-08-05
BFP760
Electrical Characteristics
40
0.15GHz
35
0.45GHz
30
0.90GHz
1.50GHz
1.90GHz
2.40GHz
Gmax [dB]
25
20
3.50GHz
15
5.50GHz
10.00GHz
10
5
0
0
10
20
30
40
50
I [mA]
60
70
80
90
C
Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
40
0.15GHz
35
0.45GHz
30
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
G
max
25
20
5.50GHz
15
10.00GHz
10
5
0
0
0.5
1
1.5
2
V
2.5
3
[V]
3.5
4
4.5
5
CE
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz
Data Sheet
21
Revision 1.1, 2013-08-05
BFP760
Electrical Characteristics
1
1.5
10.0
0.5
9.0
0.4
7.0
0.3
6.0
8.0
3
7.0
6.0
4
5.0
5.0
0.2
2
10.0
9.0
8.0
5
4.0
0.03 to 10 GHz
4.0
0.1
10
3.0
0.1
0
3.0
0.2
0.3 0.4 0.5
1
1.5
2
3
4 5
2.0
0.03
0.03
−0.1
−10
2.0
−0.2
1.0
−5
−4
−0.3
−3
−0.4
1.0
−0.5
−2
−1.5
30mA
−1
10mA
Figure 5-15 Input Reflection Coefficient S11 = f (f), VCE = 3 V, IC = 10 / 30 mA
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
0.1
2.4
1.8
3.5
0.1
0
0.2 0.3 0.4 0.5
0.9
1.8
1
1.5
10
0.9
2
3
4 5
2.4
3.5
5.5
−0.1
−10
5.5
8.0
−0.2
−5
8.0
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
−1
30mA
10mA
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 10 / 30 mA
Data Sheet
22
Revision 1.1, 2013-08-05
BFP760
Electrical Characteristics
1
1.5
0.5
2
0.4
3
0.3
10.0
10.0
4
9.0
9.0
0.2
5
8.0
8.0
0.1
7.0
6.0
0.1
0
0.2 0.3 0.4 5.0
0.5
0.03 to 10 GHz
7.0
6.0
10
5.0
4.0
1
1.5
2
3
4 5
3.0
4.0
0.03
0.03
2.0
−0.1
−10
3.0
−0.2
2.0
1.0
−5
−4
−0.3
1.0
−3
−0.4
−0.5
−2
−1.5
−1
30mA
10mA
Figure 5-17 Output Reflection Coefficient S22 = f (f), VCE = 3 V, IC = 10 / 30 mA
2
1.8
1.6
NFmin [dB]
1.4
1.2
1
0.8
IC = 30mA
0.6
I = 10mA
C
0.4
0.2
0
0
1
2
3
4
f [GHz]
5
6
7
8
Figure 5-18 Noise Figure NFmin = f (f), VCE = 3 V, IC = 10 / 30 mA, ZS = Zopt
Data Sheet
23
Revision 1.1, 2013-08-05
BFP760
NFmin [dB]
Electrical Characteristics
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
f = 8GHz
f = 5.5GHz
f = 3.5GHz
f = 2.4GHz
f = 1.8GHz
f = 0.9GHz
0
5
10
15
20
IC [mA]
25
30
35
40
Figure 5-19 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
6
5.5
5
4.5
f = 8GHz
f = 5.5GHz
f = 3.5GHz
f = 2.4GHz
f = 1.8GHz
f = 0.9GHz
NF50 [dB]
4
3.5
3
2.5
2
1.5
1
0.5
0
0
5
10
15
20
IC [mA]
25
30
35
40
Figure 5-20 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA = 25 °C
Data Sheet
24
Revision 1.1, 2013-08-05
BFP760
Simulation Data
6
Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website. Please consult our website and download the latest versions before actually starting
your design.
You find the BFP760 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these
circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is
ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin
configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP760 SPICE
GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP
model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
Data Sheet
25
Revision 1.1, 2013-08-05
BFP760
Package Information SOT343
7
Package Information SOT343
0.9 ±0.1
2 ±0.2
0.1 MAX.
1.3
0.1
A
1
2
0.1 MIN.
0.15
1.25 ±0.1
3
2.1 ±0.1
4
0.3 +0.1
-0.05
4x
0.1 M
+0.1
0.15 -0.05
+0.1
0.6 -0.05
0.2 M A
SOT343-PO V08
Figure 7-1 Package Outline
1.6
0.8
0.6
1.15
0.9
SOT343-FP V08
Figure 7-2 Package Footprint
Date code (YM)
2005, June
56
Type code
XYs
Manufacturer
Pin 1
Figure 7-3 Marking Example (Marking BFP760: R6s)
0.2
2.3
8
4
Pin 1
2.15
1.1
SOT323-TP V02
Figure 7-4 Tape Dimensions
Data Sheet
26
Revision 1.1, 2013-08-05
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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