Phototransistors PNZ123S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an photo interrupter Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Low dark current Fast response : tr = 3.5 µs (typ.) ø0.3±0.05 ø0.45±0.05 Small size (ø 3) ceramic package 0.9±0.15 Absolute Maximum Ratings (Ta = 25˚C) 2 Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Emitter to collector voltage VECO 5 V IC 10 mA Collector current Collector power dissipation PC 50 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO VCE = 10V Collector photo current ICE(L) VCE = 10V, L = 1000 lx*1 Peak sensitivity wavelength Acceptance half angle *1 *2 Conditions VCE = 10V θ Measured from the optical axis to the half power point tr*2 Fall time tf*2 typ 1 λP Rise time min 400 VCC = 10V, ICE(L) = 1mA, RL = 100Ω max Unit 100 nA 700 µA 800 nm 30 deg. 3.5 µs 5 µs Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ,,,, ,, 50Ω 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) 1 Phototransistors PNZ123S PC — Ta ICE(L) — VCE ICE(L) — L 10 4 1600 VCE = 10V Ta = 25˚C T = 2856K L =2000 lx 1200 40 30 20 10 1750 lx Collector photo current 50 ICE(L) (µA) ICE(L) (µA) Ta = 25˚C T = 2856K Collector photo current Collector power dissipation PC (mW) 60 1500 lx 800 1250 lx 1000 lx 750 lx 400 500 lx 10 3 10 2 10 250 lx 20 40 60 80 0 100 Ta (˚C ) 0 4 ICEO — Ta 12 16 20 10 1 0 20 40 Ambient temperature 60 80 VCE = 10V T = 2856K L = 1500 lx 10 3 1000 lx Ta (˚C ) 50 40 30 20 40 60 80 60 40 0 200 100 30˚ 40˚ 50˚ 60˚ 70˚ 400 600 800 1000 1200 Wavelength λ (nm) Ta (˚C ) tf — ICE(L) 10 3 VCC = 10V Ta = 25˚C 10 2 VCC = 10V Ta = 25˚C 10 2 tr (µs) 60 20 10 3 Rise time 70 Relative sensitivity S (%) 90 80 tr — ICE(L) 20˚ 100 80 VCE = 10V Ta = 25˚C tf (µs) 10˚ 0 Ambient temperature Directivity characteristics 0˚ 10 4 20 10 2 – 20 100 10 3 L (lx) Spectral sensitivity characteristics S (%) 10 2 10 2 Illuminance 100 ICE(L) (µA) VCE = 10V 10 –1 – 20 1 10 24 VCE (V) ICE(L) — Ta 10 4 Collector photo current Dark current ICEO (nA) 10 3 8 Collector to emitter voltage Relative sensitivity 0 Ambient temperature 10 RL = 1kΩ 500Ω 100Ω 1 Fall time 0 – 20 10 RL = 1kΩ 500Ω 100Ω 1 80˚ 90˚ 10 –1 10 –2 10 –1 Collector photo current 2 1 10 ICE(L) (mA) 10 –1 10 –2 10 –1 Collector photo current 1 10 ICE(L) (mA)