CCD image sensor S9037/S9038 series High-speed operation, back-thinned FFT-CCD The S9037/S9038 series FFT-CCD image sensors were developed for high-speed line scan cameras. Since an on-chip amplifier having a wide bandwidth is used to an image sensor, a pixel rate of 10 MHz can be obtained. The S9037/S9038 series image sensors also deliver a high line scan rate equivalent to interline CCD sensors when used in line binning operation mode, because they have an active area pixel format where the number of vertical pixels is less than the number of horizontal pixels. This makes the S9037/S9038 series suitable for line scan cameras. The S9037/S9038 series image sensors have a pixel size of 24 × 24 μm and are available in pixel formats of 512 × 4 pixels and 1024 × 4 pixels. The S9038 series has a one-stage thermoelectric cooler assembled in the same package allowing stable operation at cooled temperatures. Both the S9037/S9038 series image sensors use a quartz glass window equivalent to SUPRASIL glass that provides high transmittance even at 193 nm wavelength. These image sensors also have stable quantum efficiency in the UV region making them suitable for excimer laser monitors. Features Applications High-speed operation: 10 MHz Excimer laser monitors Pixel size: 24 × 24 μm High-speed line scan cameras Line/pixel binning operation S9038 series: one-stage thermoelectric cooling High quantum efficiency: 90% or more at peak MPP operation Structure Parameter Pixel size (H × V) Number of total pixels (H × V) Number of effective pixels (H × V) Image size (H × V) Vertical clock Horizontal clock Output circuit Package Window material*1 Cooling S9037-0902 S9037-1002 S9038-0902S S9038-1002S 24 × 24 μm 520 × 6 1044 × 8 520 × 6 1044 × 8 512 × 4 1024 × 4 512 × 4 1024 × 4 12.288 × 0.096 mm 24.576 × 0.096 mm 12.288 × 0.096 mm 24.576 × 0.096 mm 2 phases 2 phases Two-stage MOSFET source follower 24-pin ceramic DIP Quartz window equivalent to SUPRASIL*2 AR-coated sapphire*3 Non-cooled One-stage TE-cooled *1: Window-less type (ex. S9037-0902N) is available as option. (Temporary window is fixed by tape to protect the CCD and wire bonding.) *2: Resin sealing *3: Hermetic sealing www.hamamatsu.com 1 CCD image sensor S9037/S9038 series Absolute maximum ratings (Ta=25 °C) Parameter Operating temperature*4 Storage temperature Output transistor drain voltage Reset drain voltage Horizontal input source voltage Horizontal input gate voltage Summing gate voltage Output gate voltage Reset gate voltage Transfer gate voltage Vertical shift register clock voltage Horizontal shift register clock voltage Symbol Topr Tstg VOD VRD VISH VIG1H, VIG2H VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Min. -50 -50 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -10 -10 Typ. - Max. +70 +70 +25 +18 +18 +15 +15 +15 +15 +15 +15 +15 Unit °C °C V V V V V V V V V V Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *4: Chip temperature Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Horizontal input source Test point Horizontal input gate High Vertical shift register clock voltage Low High Horizontal shift register clock voltage Low High Summing gate voltage Low High Reset gate voltage Low High Transfer gate voltage Low External load resistance Symbol VOD VRD VOG VSS VISH VIG1H, VIG2H VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VSGH VSGL VRGH VRGL VTGH VTGL RL Min. 12 11.5 1 -9 4 -9 4 -9 4 -9 4 -9 4 -9 2.0 Typ. 15 12 3 0 VRD -8 6 -8 6 -8 6 -8 6 -8 6 -8 2.2 Max. 12.5 5 0 8 -7 8 -7 8 -7 8 -7 8 -7 2.4 Unit V V V V V V V V V V V kΩ Electrical characteristics (Typ. Ta=25 °C unless otherwise noted) Parameter Signal output frequency Line rate Vertical shift register capacitance Horizontal shift register capacitance Summing gate capacitance Reset gate capacitance Transfer gate capacitance Transfer efficiency*5 DC output level Output impedance*6 Power dissipation*6 *7 Symbol fc -0902 -1002 -0902 -1002 -0902 -1002 LR CP1V, CP2V CP1H, CP2H CSG CRG CTG CTE Vout Zo P Min. 0.99995 - Typ. 16 8 100 200 130 170 30 30 50 0.99999 7 500 100 Max. 10 - Unit MHz kHz pF pF pF pF pF pF pF V Ω mW *5: Charge transfer efficiency per pixel, measured at half of the full well capacity *6: The values depend on the load resistance. *7: Power dissipation of the on-chip amplifier plus load resistance 2 CCD image sensor S9037/S9038 series Electrical and optical characteristics (Typ. Ta=25 °C unless otherwise noted) Parameter Saturation output voltage Vertical Full well capacity Horizontal (summing) CCD node sensitivity 25 °C Dark current*8 (MPP mode) 0 °C Readout noise*9 Dynamic range (line binning) Photoresponse nonuniformity*10 Spectral response range (without window) Symbol Vsat Fw Sv DS Nr DR PRNU λ Min. - Typ. Fw × Sv 320 600 1.2 100 10 100 6000 200 to 1100 Max. 1000 100 ±10 - Unit V keμV/ee-/pixel/s e- rms % nm *8: Dark current nearly doubles for every 5 to 7 °C increase in temperature. *9: -40 °C, operating frequency=80 kHz *10: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 560 nm) Fixed pattern noise (peak to peak) Photoresponse nonuniformity (PRNU) = × 100 [%] Signal Spectral response (without window)*11 (Typ. Ta=25 °C) 100 90 Back-thinned CCD Quantum efficiency (%) 80 70 60 50 40 30 20 Front-illuminated CCD (UV coated) Front-illuminated CCD 10 0 200 400 600 800 1000 1200 Wavelength (nm) KMPDB0058EB *11: Spectral response with quartz glass or AR-coated sapphire are decreased according to the spectral transmittance characteristic of window material. 3 CCD image sensor S9037/S9038 series Spectral response (typical example, 100 to 200 nm, without window) Spectral transmittance characteristic (Ta=25 °C) 120 (Typ. Ta=25 °C) 100 90 80 Quartz window Transmittance (%) Quantum efficiency (%) 100 80 60 40 70 AR coated sapphire 60 50 40 30 20 20 10 0 100 120 140 160 180 200 Wavelength (nm) 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 Wavelength (nm) KMPDB0150EA KMPDB0110EA Dark current vs. temperature (Typ.) 1000 Dark current (e-/pixel/s) 100 10 1 0.1 0.01 -50 -40 -30 -20 -10 0 Temperature (°C) 10 20 30 KMPDB0256EA 4 CCD image sensor S9037/S9038 series Device structure (conceptual drawing of top view) S9037-0902, S9038-0902S Effective pixels Thinning Effective pixels 4 signal out SS P1V P2V Thinning TG ISH RD OD Horizontal shift register 1 OS OG Horizontal shift register SG P2H P1H IG2H IG1H 512 signal out 4 blank pixels 2-bevel 6 RG 4 blank pixels Note: When viewed from the direction of the incident light, the horizontal shift register is covered with a thick silicon layer (dead layer). However, long-wavelength light passes through the silicon dead layer and may possibly be detected by the horizontal shift register. To prevent this, provide light shield on that area as needed. KMPDC0159EE S9037-1002, S9038-1002S Effective pixels Thinning Effective pixels 8 TG RG ISH RD OD 1 Horizontal shift register OS OG 4 blank pixels Horizontal shift register 6-bevel SG P2H P1H 1024 signal out IG2H 3-bevel Thinning P2V 4 signal out P1V 1-bevel SS IG1H 4 blank pixels 6-bevel Note: When viewed from the direction of the incident light, the horizontal shift register is covered with a thick silicon layer (dead layer). However, long-wavelength light passes through the silicon dead layer and may possibly be detected by the horizontal shift register. To prevent this, provide light shield on that area as needed. KMPDC0160ED KMPDC0160ED 5 CCD image sensor S9037/S9038 series Timing chart (line binning) Integration period (Shutter must be open) Vertical binning period (Shutter must be closed) Tpwv 1 2 Readout period (Shutter must be closed) ← 4 + 2 (bevel): S903*-0902 ← 4 + 4 (bevel): S903*-1002 3.. 6 3.. 8 P1V Tovr P2V, TG 4..518 519 4..1042 1043 Tpwh, Tpws P1H 1 2 3 520 : S903*-0902 1044: S903*-1002 P2H, SG Tpwr RG OS D1 D1 D2..D4 S1..S512 D2..D10, S1..S1024 D5..D7 D11..D19 D8 : S903*-0902 D20 : S903*-1002 KMPDC0161EB P1V, P2V, TG*12 P1H, P2H*12 SG RG TG (P2V) - P1H Parameter Pulse width Rise and fall times Pulse width Rise and fall times Duty ratio Pulse width Rise and fall times Duty ratio Pulse width Rise and fall times Overlap time Symbol Tpwv Tprv, Tpfv Tpwh Tprh, Tpfh Tpws Tprs, Tpfs Tpwr Tprr, Tpfr Tovr Min. 1 50 50 5 3 Typ. 20 10 50 10 50 15 - Max. - Unit μs ns ns ns % ns ns % ns ns μs *12: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. 6 CCD image sensor S9037/S9038 series Dimensional outline (unit: mm) S9037-0902 S9037-1002 Window 16.3* Window 28.6* Photosensitive area 12.29 Photosensitive area 24.58 22.4 ± 0.30 8.2* 22.9 ± 0.30 22.4 ± 0.30 8.2* 1 13 0.096 24 12 1 2.54 ± 0.13 12 2.54 ± 0.13 34.0 ± 0.34 4.8 ± 0.49 4.4 ± 0.44 3.0 Photosensitive surface 3.8 ± 0.44 Index mark pin no. 1 2.4 ± 0.15 4.8 ± 0.49 4.4 ± 0.44 Photosensitive surface 3.8 ± 0.44 2.4 ± 0.15 44.0 ± 0.44 3.0 Index mark pin no. 1 22.9 ± 0.30 13 0.096 24 (24 ×) 0.5 ± 0.05 (24 ×) 0.5 ± 0.05 * Size of window that guarantees the transmittance in the “Spectral transmittance characteristic” graph * Size of window that guarantees the transmittance in the “Spectral transmittance characteristic” graph KMPDA0154EC KMPDA0153ED S9038-0902S Window 16.3* Photosensitive area 12.29 13 19.0 22.4 ± 0.30 22.9 ± 0.30 7.3 ± 0.63 7.7 ± 0.68 4.0 6.7 ± 0.63 8.2* 0.096 24 1 12 2.54 ± 0.13 34.0 ± 0.34 42.0 Index mark pin no. 1 4.8 ± 0.15 50.0 ± 0.30 Photosensitive surface 1.0 3.0 TE-cooler (24 ×) 0.5 ± 0.05 * Size of window that guarantees the transmittance in the “Spectral transmittance characteristic” graph KMPDA0155EC 7 CCD image sensor S9037/S9038 series S9038-1002S Window 28.6* Photosensitive area 24.58 4.0 19.0 22.4 ± 0.30 8.2* 1 22.9 ± 0.30 13 0.096 24 12 2.54 ± 0.13 44.0 ± 0.44 52.0 7.7 ± 0.66 7.3 ± 0.63 Photosensitive surface 6.7 ± 0.63 Index mark pin no. 1 4.8 ± 0.15 60.0 ± 0.30 1.0 3.0 TE-cooler (24 ×) 0.5 ± 0.05 * Size of window that guarantees the transmittance in the “Spectral transmittance characteristic” graph KMPDA0156EC S9037-0902N S9037-1002N Window 28.6 Photosensitive area 12.29 Photosensitive area 24.58 13 22.4 ± 0.30 1 1 12 22.9 ± 0.30 24 0.096 22.4 ± 0.30 4.5 22.9 ± 0.30 13 0.096 24 4.5 ± 0.15 Window16.3 12 2.54 ± 0.13 2.54 ± 0.13 44.0 ± 0.34 4.8 ± 0.49 3.0 Photosensitive surface 2.4 ± 0.15 4.8 ± 0.49 Photosensitive surface Index mark pin no. 1 3.0 Index mark pin no. 1 2.4 ± 0.15 34.0 ± 0.34 (24 ×) 0.5 ± 0.05 KMPDA0165EC (24 ×) 0.5 ± 0.05 KMPDA0166EC 8 CCD image sensor S9037/S9038 series S9038-0902N Window 16.3 Photosensitive area 12.29 22.9 ± 0.30 4.0 19.0 4.5 1 22.4 ± 0.30 13 0.096 24 12 2.54 ± 0.13 34.0 ± 0.34 42.0 Photosensitive surface 7.7 ± 0.68 Index mark pin no. 1 4.8 ± 0.15 50.0 ± 0.30 1.0 3.0 TE-cooler (24 ×) 0.5 ± 0.05 KMPDA0167EC S9038-1002N Window 28.6 13 19.0 22.4 ± 0.30 4.8 ± 0.15 7.7 ± 0.68 4.0 1 22.9 ± 0.30 24 0.096 12 2.54 ± 0.13 44.0 ± 0.44 52.0 60.0 ± 0.30 Index mark pin no. 1 Photosensitive surface 1.0 TE-cooler 3.0 4.5 ± 0.15 Photosensitive area 24.58 (24 ×) 0.5 ± 0.05 KMPDA0168EC 9 CCD image sensor S9037/S9038 series Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Symbol RD OS OD OG SG P2H P1H IG2H IG1H ISH TG*13 P2V P1V NC NC NC NC SS NC NC NC RG S9037 series Description Reset drain Output transistor source Output transistor drain Output gate Summing gate Remark Symbol +12 V RD OS RL=2.2 kΩ +15 V OD +3 V OG Same timing as P2H SG CCD horizontal register clock-2 P2H CCD horizontal register clock-1 P1H Test point (horizontal input gate-2) -8 V IG2H Test point (horizontal input gate-1) -8 V IG1H Test point (horizontal input source) Connected to RD ISH Transfer gate Same timing as P2V TG*13 CCD vertical register clock-2 P2V CCD vertical register clock-1 P1V Th1 Th2 PP+ Substrate (GND) GND SS NC NC NC Reset gate RG S9038 series Description Reset drain Output transistor source Output transistor drain Output gate Summing gate Remark +12 V RL=2.2 kΩ +15 V +3 V Same timing as P2H CCD horizontal register clock-2 CCD horizontal register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Test point (horizontal input source) Transfer gate CCD vertical register clock-2 CCD vertical register clock-1 Thermistor Thermistor TE-coolerTE-cooler+ Substrate (GND) -8 V -8 V Connected to RD Same timing as P2V GND Reset gate *13: Isolation gate between vertical register and horizontal register. In standard operation, input the same pulse to TG as input to P2V. Specifications of built-in TE-cooler (Typ.) Parameter Internal resistance Maximum current*14 Maximum voltage Maximum heat absorption*17 Maximum temperature of heat radiating side Symbol Condition Rint Ta=25 °C Imax Tc*15=Th*16=25 °C Vmax Tc*15=Th*16=25 °C Qmax - S9038-0902S 2.5 1.5 3.8 3.4 S9038-1002S 1.2 3.0 3.6 5.1 Unit Ω A V W 70 70 °C *14: If the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60% of this maximum current. *15: Temperature of the cooling side of thermoelectric cooler *16: Temperature of the heat radiating side of thermoelectric cooler *17: This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the maximum current is supplied to the unit. 10 CCD image sensor S9037/S9038 series (Typ. Ta=25 °C) Voltage vs. current CCD temperature vs. current 4 0 3 -10 2 -20 -30 1 -30 -40 2.0 0 0 3 -10 2 -20 1 1.0 1.5 20 10 4 0.5 30 5 10 0 Voltage vs. current CCD temperature vs. current 6 20 5 0 (Typ. Ta=25 °C) 7 Voltage (V) 6 30 CCD temperature (°C) 7 Voltage (V) S9038-1002S 0 1 Current (A) 2 3 4 CCD temperature (°C) S9038-0902S -40 Current (A) KMPDB0179EA KMPDB0178EA Specifications of built-in temperature sensor A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation. Resistance The characteristics of the thermistor used are as follows. R298=10 kΩ B298/323=3450 K (Typ. Ta=25 °C) 1 MΩ RT1 = RT2 × exp BT1/T2 (1/T1 - 1/T2) RT1: resistance at absolute temperature T1 [K] RT2: resistance at absolute temperature T2 [K] BT1/T2: B constant [K] 100 kΩ 10 kΩ 220 240 260 280 300 Temperature (K) KMPDB0111EB Precautions (electrostatic countermeasures) ・ Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing and use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. ・ Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. ・ Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. ・ Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Element cooling/heating temperature incline rate Element cooling/heating temperature incline rate should be set at less than 5 K/min. 11 CCD image sensor S9037/S9038 series Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Image sensors/Precautions Technical information ∙ FFT-CCD area image sensor/Technical information Information described in this material is current as of May, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1067E07 May 2014 DN 12