Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm ● ● 0.5±0.08 1.5±0.1 * (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 400 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 5 V Peak collector current ICP 200 mA Collector current IC 100 mA Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics Parameter 2 2.5±0.1 1 marking Parameter 1cm2 0.4±0.04 3.0±0.15 3 ■ Absolute Maximum Ratings +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 ■ Features 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 1S or more, and the board (Ta=25˚C) Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 100µA, IE = 0 400 V Collector to emitter voltage VCEO IC = 500µA, IB = 0 400 V Emitter to base voltage VEBO IE = 100µA, IC = 0 5 V Forward current transfer ratio hFE VCE = 5V, IC = 30mA 30 Collector to emitter saturation voltage VCE(sat) IC = 50mA, IB = 5mA 1.5 V Base to emitter saturation voltage VBE(sat) IC = 50mA, IB = 5mA 1.5 V Transition frequency fT VCB = 30V, IE = –20mA, f = 200MHz Collector output capacitance Cob VCB = 30V, IE = 0, f = 1MHz 40 MHz 7 pF 1 2SD2413 Transistor Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.2 1.0 0.8 0.6 0.4 100 80 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 60 40 0.2mA 20 0.2 0.1mA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 10 3 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 3 10 30 100 Collector current IC (mA) Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 10 8 6 4 2 0 10 30 100 10 3 1 25˚C –25˚C 0.1 0.03 0.01 0.1 0.3 300 1000 Collector to base voltage VCB (V) 1 3 10 30 100 Collector current IC (mA) 60 150 120 90 25˚C Ta=75˚C 60 –25˚C 30 0 0.1 Ta=75˚C 0.3 fT — I E 0.3 1 3 10 30 Collector current IC (mA) Cob — VCB 12 12 30 VCE=5V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 1 10 180 IC/IB=10 0.3 8 IC/IB=10 hFE — IC 100 0.01 0.1 6 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 1 4 VCB=30V Ta=25˚C Transition frequency fT (MHz) 0 2 VCE(sat) — IC Ta=25˚C Collector current IC (mA) Collector power dissipation PC (W) IC — VCE 120 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.4 100 50 40 30 20 10 0 –1 –3 –10 –30 –100 –300 –1000 Emitter current IE (mA)