PANASONIC 2SC3507

Power Transistors
2SC3507
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
■ Features
●
●
■ Absolute Maximum Ratings
(TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
1000
V
VCES
1000
V
VCEO
800
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
10
A
Collector current
IC
5
A
Base current
IB
3
A
Collector to emitter voltage
Collector power TC=25°C
dissipation
Junction temperature
Tj
Storage temperature
Tstg
80
0.7
2.0±0.1
1.1±0.1
0.6±0.2
1
2
3
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
150
˚C
–55 to +150
˚C
(TC=25˚C)
Parameter
Symbol
Conditions
ICBO
VCB = 1000V, IE = 0
Emitter cutoff current
IEBO
VEB = 7V, IC = 0
Collector to emitter voltage
VCEO(sus)*
IC = 0.5A, L = 50mH
Forward current transfer ratio
hFE
VCE = 5V, IC = 3A
Collector to emitter saturation voltage
VCE(sat)
IC = 3A, IB = 0.6A
Base to emitter saturation voltage
VBE(sat)
IC = 3A, IB = 0.6A
Transition frequency
fT
VCE = 5V, IC = 0.5A, f = 1MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
Test circuit
2.0±0.2
10.9±0.5
Collector cutoff current
*V
CEO(sus)
φ3.2±0.1
W
3
■ Electrical Characteristics
5.0±0.2
3.2
5.45±0.3
PC
Ta=25°C
15.0±0.3
11.0±0.2
21.0±0.5
15.0±0.2
●
High-speed switching
High collector to base voltage VCBO
Satisfactory linearity of foward current transfer ratio hFE
Full-pack package which can be installed to the heat sink with
one screw
16.2±0.5
12.5
3.5
Solder Dip
●
IC = 3A, IB1 = 0.6A, IB2 = –1.2A,
VCC = 250V
50/60Hz
mercury relay
min
typ
max
Unit
50
µA
50
µA
800
V
6
1.5
1.5
6
V
V
MHz
1
µs
2.5
µs
0.5
µs
X
L 50mH
Y
120Ω
6V
1Ω
15V
G
1
Power Transistors
2SC3507
IC — VCE
(1)
80
TC=25˚C
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3W)
Collector current IC (A)
Collector power dissipation PC (W)
VCE(sat) — IC
10
60
40
20 (2)
8
6
IB=800mA
500mA
400mA
4
300mA
200mA
2
100mA
20mA
(3)
0
0
0
25
50
75
100
125
150
0
Ambient temperature Ta (˚C)
2
4
VBE(sat) — IC
12
TC=–25˚C
100˚C
25˚C
0.1
0.03
0.3
1
3
100
TC=100˚C
30
10
25˚C
–25˚C
3
1
0.3
0.1
0.3
1
3
10
Area of safe operation (ASO)
Non repetitive pulse
TC=25˚C
30
Collector current IC (A)
3
tstg
1
ton
tf
0.1
Pulsed tw=1ms
Duty cycle=1%
IC/IB=5
(2IB1=–IB2)
VCC=250V
TC=25˚C
0
1
2
3
4
5
0.03
0.01
0.01 0.03
6
7
Collector current IC (A)
0.1
0.3
1
ICP
10
t=1ms
IC
10ms
3
DC
1
0.3
0.1
0.03
0.01
8
3
10
VCE=5V
f=1MHz
TC=25˚C
300
100
30
10
3
1
1
3
10
30
100
300
0.1
0.01 0.03
0.1
0.3
1
3
Collector current IC (A)
100
0.01
–25˚C
0.1
0.3
Collector current IC (A)
ton, tstg, tf — IC
0.03
25˚C
0.3
fT — IC
300
0.1
0.01 0.03
10
10
0.3
TC=100˚C
1
Collector current IC (A)
Transition frequency fT (MHz)
Forward current transfer ratio hFE
3
0.1
3
VCE=5V
10
0.3
10
1000
IC/IB=5
30
1
IC/IB=5
30
hFE — IC
Collector current IC (A)
Switching time ton,tstg,tf (µs)
10
1000
0.01
0.01 0.03
2
8
100
Collector to emitter voltage VCE (V)
100
Base to emitter saturation voltage VBE(sat) (V)
6
Collector to emitter saturation voltage VCE(sat) (V)
PC — Ta
100
1000
Collector to emitter voltage VCE (V)
10
Power Transistors
2SC3507
Area of safe operation, reverse bias ASO
Reverse bias ASO measuring circuit
16
Lcoil=100µH
IC/IB=5
(2IB1=–IB2)
TC=125˚C
Collector current IC (A)
14
L coil
12
IB1
T.U.T
IC
ICP
10
–IB2
Vin
8
6
VCC
IC
4
Vclamp
tW
2
0
0
200 400 600 800 1000 1200 1400 1600
Collector to emitter voltage VCE (V)
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
103
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
102
(1)
10
(2)
1
10–1
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3