CPV364M4FPbF Datasheet

CPV364M4FPbF
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Vishay Semiconductors
IGBT SIP Module
(Fast IGBT)
FEATURES
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
• HEXFRED® soft ultrafast diodes
• Optimized for medium speed, see fig. 1 for current vs.
frequency curve
IMS-2
• UL approved file E78996
• Designed and qualified for industrial level
PRODUCT SUMMARY
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE
VCES
600 V
IRMS per phase (4.6 kW total)
with TC = 90 °C
18 ARMS
TJ
125 °C
Supply voltage
360 VDC
DESCRIPTION
Power factor
0.8
Modulation depth (see fig. 1)
115 %
VCE(on) (typical)
at IC = 15 A, 25 °C
1.35 V
Speed
1 kHz to 8 kHz
Package
SIP
Circuit
Three phase inverter
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current, each IGBT
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
SYMBOL
TEST CONDITIONS
VCES
IC
MAX.
UNITS
600
V
TC = 25 °C
27
TC = 100 °C
15
ICM
(1)
80
ILM
(2)
80
IF
A
TC = 100 °C
9.3
Diode maximum forward current
IFM
80
Gate to emitter voltage
VGE
± 20
V
2500
VRMS
Isolation voltage
Maximum power dissipation, each IGBT
Operating junction and storage 
temperature range
VISOL
PD
Any terminal to case, t = 1 min
TC = 25 °C
63
TC = 100 °C
25
TJ, TStg
W
-40 to +150
°C
Soldering temperature
For 10 s, (0.063" (1.6 mm) from case)
Mounting torque
6-32 or M3 screw
300
5 to 7
(0.55 to 0.8)
lbf · in
(N · m)
Notes
(1) Repetitive rating; V
GE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2) V
CC = 80 % (VCES), VGE = 20 V, L = 10 μH, RG = 10 (see fig. 19)
Revision: 10-Jun-15
Document Number: 94487
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, each IGBT, one IGBT in conduction
Junction to case, each DIODE, one DIODE in conduction
Case to sink, flat, greased surface
SYMBOL
TYP.
MAX.
UNITS
RthJC (IGBT)
-
2.0
RthJC (DIODE)
-
3.0
RthCS (MODULE)
0.10
-
20
-
g
0.7
-
oz.
°C/W
Weight of module
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Collector to emitter breakdown
voltage
V(BR)CES (1)
V(BR)CESTJ
Temperature coefficient of 
breakdown voltage
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
VGE = 0 V, IC = 250 μA
600
-
-
V
VGE = 0 V, IC = 1.0 mA
-
0.69
-
V/°C
-
1.35
1.5
-
1.60
-
-
1.35
-
3.0
-
6.0
-
- 12
-
mV/°C
VCE = 100 V, IC = 27 A
9.2
12
-
S
VGE = 0 V, VCE = 600 V
-
-
250
VGE = 0 V, VCE = 600 V, TJ = 150 °C
-
-
2500
IC = 15 A
-
1.3
1.7
IC = 15 A, TJ = 150 °C
-
1.2
1.6
VGE = ± 20 V
-
-
± 100
IC = 15 A
Collector to emitter saturation voltage
VCE(on)
IC = 27 A
VGE = 15 V
See fig. 2, 5
IC = 15 A, TJ = 150 °C
Gate threshold voltage
VGE(th)
Temperature coefficient of 
threshold voltage
VGE(th)/TJ
Forward transconductance
gfe (2)
Zero gate voltage collector current
ICES
Diode forward voltage drop
Gate to emitter leakage current
VFM
IGES
VCE = VGE, IC = 250 μA
V
μA
See fig. 13
V
nA
Notes
(1) Pulse width  80 μs, duty factor  0.1 %
(2) Pulse width 5.0 μs; single shot
Revision: 10-Jun-15
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SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Total gate charge (turn-on)
Qg
Gate to emitter charge (turn-on)
Qge
Gate to collector charge (turn-on)
Qgc
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
TEST CONDITIONS
IC = 15 A
VCC = 400 V
VGE = 15 V
See fig. 8
tr
td(off)
tf
TJ = 25 °C
IC = 15 A, VCC = 480 V
VGE = 15 V, RG = 10 
Energy losses include “tail” and diode 
reverse recovery
See fig. 9, 10, 11, 18
MIN.
TYP.
MAX.
-
100
160
-
15
23
-
37
56
-
42
-
-
18
-
-
220
330
-
160
240
-
0.46
-
Eon
Turn-off switching loss
Eoff
-
0.86
-
Total switching loss
Ets
-
1.32
1.8
Turn-on delay time
td(on)
-
39
-
-
19
-
-
410
-
-
290
-
-
2.5
-
-
2200
-
-
140
-
-
29
-
-
42
60
-
74
120
-
4.0
6.0
-
6.5
10
-
80
180
-
220
600
-
188
-
-
160
-
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
Total switching loss
Ets
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Diode reverse recovery time
trr
Diode peak reverse recovery charge
Diode reverse recovery charge
Diode peak rate of fall of recovery
during tb
Irr
Qrr
dI(rec)M/dt
VGE = 0 V
VCC = 30 V
ƒ = 1.0 MHz
See fig. 7
TJ = 25 °C
See fig. 15
TJ = 125 °C
TJ = 25 °C
See fig. 16
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
mJ
ns
See fig. 14
mJ
pF
ns
TJ = 125 °C
TJ = 25 °C
nC
ns
Turn-on switching loss
TJ = 150 °C
IC = 15 A, VCC = 480 V
VGE = 15 V, RG = 10 
Energy losses include “tail” and 
diode reverse recovery
See fig. 9, 10, 11, 18
UNITS
IF = 15 A
VR = 200 V
dI/dt = 200 A/μs
A
nC
See fig. 17
A/μs













Revision: 10-Jun-15
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25
LOAD CURRENT (A)
20
Total Output Power (kW)
7.34
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
5.87
15
4.40
10
2.94
5
1.47
0.00
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of Fundamental)
30
Maximum DC Collector Current(A)
IC , Collector-to-Emitter Current (A)
100
TJ = 25°C
TJ = 150°C
10
V GE = 15V
20µs PULSE WIDTH
1
1
25
20
15
10
5
0
10
25
VCE , Collector-to-Emitter Voltage (V)
TJ = 150°C
10
TJ = 25°C
V CC = 50V
5µs PULSE WIDTH
7
8
9
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
10
VCE , Collector-to-Emitter Voltage(V)
IC , Collector-to-Emitter Current (A)
3.0
6
100
125
150
Fig. 4 - Maximum Collector Current vs. Case Temperature
100
5
75
TC , Case Temperature ( °C)
Fig. 2 - Typical Output Characteristics
1
50
VGE = 15V
80 us PULSE WIDTH
IC = 30A
2.0
IC = 15A
IC = 7.5A
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
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Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
PDM
0.05
0.1
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/t
1
t
2
2
2. Peak TJ = P DM x Z thJC + T C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
4000
VGE = 0V
1.45
f = 1 MHz
Cies = Cge + Cgc + Cce
Cres = Cce
Total Switching Losses (mJ)
Coes = Cce + Cgc
3000
Cies
2000
Coes
1000
VCC
VGE
TJ
IC
SHORTED
= 480V
= 15V
= 25 ° C
= 15A
1.40
1.35
Cres
0
1
10
1.30
100
0
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
10
VCC = 400V
I C = 15A
16
12
8
4
0
0
20
40
60
80
100
20
30
40
50
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Total Switching Losses (mJ)
VGE , Gate-to-Emitter Voltage (V)
20
10
RG , Gate Resistance ( Ω )
VCE, Collector-to-Emitter Voltage (V)
120
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
RG = 10 Ω
VGE = 15V
VCC = 480V
IC = 30 A
IC = 15 A
IC = 7.5 A
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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RG
TJ
VCC
5.0
VGE
1000
= 10 Ω
= 150 °C
= 480V
= 15V
I C, Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
6.0
Vishay Semiconductors
4.0
3.0
2.0
1.0
VGE = 20V
T J = 125 oC
100
10
SAFE OPERATING AREA
1
0.0
0
5
10
15
20
25
1
30
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector to Emitter Current
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
100
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
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800
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
600
80
Q RR - (nC)
t rr - (ns)
IF = 30A
I F = 30A
60
I F = 15A
400
I F = 15A
IF = 5.0A
200
40
I F = 5.0A
20
100
di f /dt - (A/µs)
0
100
1000
100
1000
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
VR = 200V
TJ = 125°C
TJ = 25°C
I F = 30A
I IRRM - (A)
1000
Fig. 16 - Typical Stored Charge vs. dIF/dt
Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt
10
di f /dt - (A/µs)
IF = 15A
I F = 5.0A
I F = 15A
I F = 30A
I F = 5.0A
1
100
1000
di f /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dIF/dt
100
100
1000
di f /dt - (A/µs)
Fig. 17 - Typical dI(rec)M/dt vs dIF/dt
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GATE VOLTAGE D.U.T.
10% +Vg
+Vg
Same type
device as
D.U.T.
DUT VOLTAGE
AND CURRENT
Vce
80 %
of VCE
430 µF
Vcc
10% Ic
Ipk
90% Ic
Ic
D.U.T.
5% Vce
tr
td(on)
t2
Eon = Vce ie dt
t1
∫
t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr,
Irr, td(on), tr, td(off), tf
t2
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
90% Vge
trr
Qrr =
Ic
+Vge
tx
10% Vcc
Vce
∫
trr
id dt
tx
10% Irr
Vcc
Ic
90% Ic
10% Vce
Vpk
Irr
Ic
5% Ic
td(off)
DIODE RECOVERY
WAVEFORMS
tf
Eoff =
∫
t1+5µS
Vce ic dt
t1
DIODE REVERSE
RECOVERY ENERGY
t3
t1
t4
Erec = Vd id dt
t3
∫
t4
t2
Fig. 18b - Test Waveforms for Circuit for Fig. 18a,
Defining Eoff, td(off), tf
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Vg GATE SIGNAL
DEVICE UNDER TES
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit
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D.U.T.
L
1000 V
VC
RL =
6000 µF
100 V
50 V
480 V
4 x IC at 25 °C
0 - 480 V
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
CIRCUIT CONFIGURATION
1
3
Q1
D1
9
Q3
D3
4
6
Q2
D2
7
12
15
Q5
D5
10
Q4
D4
13
18
16
Q6
D6
19
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95066
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Outline Dimensions
Vishay Semiconductors
IMS-2 (SIP)
DIMENSIONS in millimeters (inches)
Ø 3.91 (0.154)
2x
62.43 (2.458)
7.87 (0.310)
53.85 (2.120)
5.46 (0.215)
21.97 (0.865)
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
0.38 (0.015)
3.94 (0.155)
1.27 (0.050)
4.06 ± 0.51
(0.160 ± 0.020)
5.08 (0.200)
6x
1.27 (0.050)
13 x
2.54 (0.100)
6x
3.05 ± 0.38
(0.120 ± 0.015)
0.76 (0.030)
13 x
0.51 (0.020)
6.10 (0.240)
IMS-2 Package Outline (13 Pins)
Notes
(1) Tolerance uless otherwise specified ± 0.254 mm (0.010")
(2) Controlling dimension: inch
(3) Terminal numbers are shown for reference only
Document Number: 95066
Revision: 30-Jul-07
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